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Infineon Technologies AG


Infineon Technologies AG IPB13N03LBG OptlMOS N-Channel Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IPB13N03LBG		999		1	1 - 10 - 100 $0.47 1000 $0.39 10000 $0.35	Buy Now
Infineon Technologies AG IPP13N03LBG Power Field-Effect Transistor, 30A I(D), 30V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPP13N03LBG		12,719			1 - 10 - 100 - 1000 - 10000 -	Get Quote

13N03LB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp13n03lb pg-to220-3-1 q67045-a5035 13n03lb	PDF
JESD22 Contextual Info: 13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp13n03lb pg-to220-3-1 13n03lb jesd22	PDF
13N03 Abstract: 13n03l JESD22 IPP13 Contextual Info: 13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp13n03lb pg-to220-3-1 13n03lb 13n03 +313n03l jesd22 ipp13	PDF
13N03 Abstract: DSA003242 Contextual Info: 13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters R DS on ,max • Qualified according to JEDEC1) for target application 30 12.8 ID 30 V m: A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp13n03lb pg-to220-3 13n03lb 13n03 +1dsa003242	PDF
IPB13N03LB Abstract: JESD22 13N03 C8150 Contextual Info: 13N03LB OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications 30 R DS on),max 12.5 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipb13n03lb pg-to263-3 p-to263-3 13n03lb +3jesd22 13n03 c8150	PDF
13N03 Contextual Info: 13N03LB G OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application 30 R DS on),max 12.8 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipp13n03lb pg-to220-3-1 13n03lb 13n03	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
Contextual Info: 13N03LB OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications 30 R DS on),max 12.5 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipb13n03lb p-to263-3 q67045-a5030 13n03lb	PDF