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    120N06 Search Results

    120N06 Datasheets (4)

    Maplesemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SLP120N06T
    		Maplesemi 60V N-Channel MOSFET with 120A continuous drain current, 4.4mΩ typical RDS(on) at VGS = 10V, suitable for high-efficiency power management, load switching, and PWM applications. Original PDF
    badge SLM120N06G
    		Maplesemi 60V N-Channel MOSFET with 120A continuous drain current, 2.6mΩ typical RDS(on) at VGS = 10V, DFN5x6 package, suitable for DC/DC converters and power management applications requiring low on-resistance and high switching performance. Original PDF
    badge SLB120N06T
    		Maplesemi 60V N-Channel MOSFET with 120A continuous drain current, 4.4mΩ typical RDS(on) at VGS = 10V, TO-263 package, suitable for high-efficiency power switching applications. Original PDF
    badge SLD120N06T
    		Maplesemi 60V N-Channel MOSFET with 120A continuous drain current, 4.2mΩ typical RDS(on) at VGS = 10V, low gate charge, and fast switching performance in a D-Pak package. Original PDF
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    120N06 Price and Stock

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    Rochester Electronics LLC IPP120N06S4H1AKSA2

    IPP120N06 - OPTIMOS N-CHANNEL
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    DigiKey IPP120N06S4H1AKSA2 Bulk 38,480 127
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    Infineon Technologies AG IAUC120N06S5L022ATMA1

    MOSFET_)40V 60V)
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    DigiKey () IAUC120N06S5L022ATMA1 Digi-Reel 5,397 1
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    IAUC120N06S5L022ATMA1 Tape & Reel 5,397 5,000
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    IAUC120N06S5L022ATMA1 Cut Tape 5,397 1
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    Avnet Americas IAUC120N06S5L022ATMA1 Tape & Reel 26 Weeks 5,000
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    Mouser Electronics () IAUC120N06S5L022ATMA1 3,914
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    IAUC120N06S5L022ATMA1 3,794
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    IAUC120N06S5L022ATMA1 Tape & Reel 1,889 100
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    EBV Elektronik IAUC120N06S5L022ATMA1 27 Weeks 5,000
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    Infineon Technologies AG IAUC120N06S5N017ATMA1

    MOSFET N-CH 60V 120A TDSON-8-43
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    DigiKey () IAUC120N06S5N017ATMA1 Cut Tape 3,810 1
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    IAUC120N06S5N017ATMA1 Tape & Reel 3,810 5,000
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    IAUC120N06S5N017ATMA1 Digi-Reel 3,810 1
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    Mouser Electronics () IAUC120N06S5N017ATMA1 3,454
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    IAUC120N06S5N017ATMA1 3,448
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    Newark () IAUC120N06S5N017ATMA1 Tape & Reel 12,360 100
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    IAUC120N06S5N017ATMA1 Cut Tape 12,360 1
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    Rochester Electronics IAUC120N06S5N017ATMA1 94,925 1
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    EBV Elektronik IAUC120N06S5N017ATMA1 27 Weeks 5,000
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    Win Source Electronics IAUC120N06S5N017ATMA1 18,470
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    Vishay Intertechnologies SQM120N06-3M5L_GE3

    MOSFET N-CH 60V 120A TO263
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    DigiKey () SQM120N06-3M5L_GE3 Digi-Reel 2,197 1
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    SQM120N06-3M5L_GE3 Tape & Reel 2,197 800
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    Avnet Americas SQM120N06-3M5L_GE3 Tape & Reel 20 Weeks 800
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    Mouser Electronics () SQM120N06-3M5L_GE3 878
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    SQM120N06-3M5L_GE3 778
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    EBV Elektronik SQM120N06-3M5L_GE3 21 Weeks 800
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    Infineon Technologies AG IPB120N06S402ATMA2

    MOSFET N-CH 60V 120A TO263-3
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    DigiKey () IPB120N06S402ATMA2 Cut Tape 962 1
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    IPB120N06S402ATMA2 Tape & Reel 962
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    IPB120N06S402ATMA2 284 1
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    Rochester Electronics IPB120N06S402ATMA2 4,323 1
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    Find more 120N06 price and stock on Findchips.com

    120N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    120N06N

    Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng
    Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng PDF

    IPB120N06N

    Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94
    Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 PDF

    120N06N

    Abstract: 120N06
    Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 120N06N 120N06 PDF

    120N06N

    Abstract: 120N06 IPP120N06N IPB120N06N ipp120n06ng IPP120N06N G
    Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 68-1n 120N06N 120N06 ipp120n06ng IPP120N06N G PDF

    120N06N

    Abstract: 75F75 IPP120N06N 120n06 PG-TO220-3
    Contextual Info: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - normal level 60 11.7 SMDversion ID 75 V m: A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N PG-TO220-3 PG-TO263-3 120N06N page10 120N06N 75F75 120n06 PG-TO220-3 PDF