16N06L Search Results
16N06L Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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16N06LE | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
16N06LESM | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 | ||
16N06LESM9A | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.25KB | 1 |
16N06L Price and Stock
Infineon Technologies AG IPB016N06L3GATMA1MOSFET N-CH 60V 180A TO263-7 |
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IPB016N06L3GATMA1 | Cut Tape | 8,979 | 1 |
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IPB016N06L3GATMA1 | Reel | 12 Weeks | 1,000 |
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IPB016N06L3GATMA1 | 639 |
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IPB016N06L3GATMA1 | Cut Tape | 47 | 1 |
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IPB016N06L3GATMA1 | Cut Tape | 977 | 0 Weeks, 1 Days | 1 |
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IPB016N06L3GATMA1 | 13 Weeks | 1,000 |
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onsemi RFD16N06LESM9AMOSFET N-CH 60V 16A TO252AA |
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RFD16N06LESM9A | Digi-Reel | 2,497 | 1 |
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RFD16N06LESM9A | Reel | 14 Weeks | 2,500 |
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RFD16N06LESM9A | 2,598 |
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RFD16N06LESM9A | Cut Tape | 1,096 | 5 |
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RFD16N06LESM9A | 278 | 1 |
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RFD16N06LESM9A | 137 | 1 |
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RFD16N06LESM9A | 2,500 |
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RFD16N06LESM9A | 15 Weeks | 2,500 |
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RFD16N06LESM9A | 16 Weeks | 2,500 |
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Glenair Inc M85049/3716N06L- Bulk (Alt: M85049/3716N06L) |
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M85049/3716N06L | Bulk | 3 Weeks | 1 |
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M85049/3716N06L |
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M85049/3716N06L | Bulk | 22 | 1 |
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M85049/3716N06L | 1 |
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M85049/3716N06L | 1 |
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M85049/3716N06L | 9 |
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Infineon Technologies AG IPB016N06L3 GMOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS 3 |
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IPB016N06L3 G | 1,795 |
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Fairchild Semiconductor Corporation RFD16N06LESM9AElectronic Component |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RFD16N06LESM9A | 1,722 |
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RFD16N06LESM9A | 800 |
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16N06L Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 16N06LE, 16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives |
OCR Scan |
RFD16N06LE, RFD16N06LESM | |
16n06l
Abstract: 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027
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RFD16N06LE, RFD16N06LESM 16n06l 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027 | |
Contextual Info: 16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum |
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RFD16N06LESM | |
Contextual Info: 16N06LESM October 2013 Data Sheet N-Channel Logic Level Power MOSFET 60 V, 16 A, 47 mΩ Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives |
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RFD16N06LESM RFD16N06LESM | |
16n06l
Abstract: pspice model for ttl
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RFD16N06LE RFD16N06LESM O-251 h1994 O-252AA RFD16N06LESM 6756e-4 425e-7 59e-10 16n06l pspice model for ttl | |
16N06
Abstract: RFD16N06
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RFD16N06LE, RFD16N06LESM TB334 16N06 RFD16N06 | |
16n06l
Abstract: 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334
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RFD16N06LE, RFD16N06LESM 16n06l 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 | |
16n06leContextual Info: 16N06LE, 16N06LESM in t e f s il D ata S h e e t 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum |
OCR Scan |
RFD16N06LE, RFD16N06LESM AN7254 AN7260. 16n06le | |
16n06l
Abstract: AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334
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RFD16N06LESM 16n06l AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334 |