TA17502 Search Results

IRFD9220

Contextual Info: IRFD9220 Data Sheet January 2002 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

irf9620

Contextual Info: IRF9620 Data Sheet Title F96 bt A, 0V, 00 m, July 1999 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of

IRFF9220

Contextual Info: IRFF9220 Data Sheet July 1998 -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs • -2.5A, -200V • rDS ON = 1.5Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

if9220

Abstract: TC227 irfu9220 IRFR9220 TB334
Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching

fr9220

Abstract: FR 9220 FU9220 17e7m 17e7 609r
Contextual Info: f l H IRFR9220, a r r is S E M I C O N D U C T O R j 3.6A, 200V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages • 3.6A, 200V JE D E C T O -2 5 1 A A SOURCE • rDS,oN)=1-500SJ • Temperature Compensating PSPICE Model

Contextual Info: IRFD9220 S em iconductor April 1999 Data Sheet -0.6A, -200V, 1.500 Ohm, P-Channel Power MOSFET • -0.6A, -200V • rDS ON = 1 -500i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: h a r ^ IRFF9220, IRFF9221, IRFF9222, IRFF9223 s s e m i c o n d u c t o r -2A and -2.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -2A and -2.5A, -150V and -200V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and

IRF9620

Contextual Info: IRF9620 Data Sheet July 1999 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRF9622

Abstract: IRF9620 IRF9623 IRF9621 TB334
Contextual Info: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFD9220 Data Sheet Title FD 20 bt A, 0V, 00 m, July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF9220

Contextual Info: IRFF9220 Data Sheet January 2002 -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs Features • -2.5A, -200V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are P-Channel

irf9620

Contextual Info: IRF9620 Data Sheet January 2002 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

if9220

Abstract: TC227 irfu9220 IRFR9220
Contextual Info: IRFR9220, IRFU9220 S E M I C O N D U C T O R 3.6A, 200V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 3.6A, 200V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 1.500Ω • Temperature Compensating PSPICE Model

Contextual Info: h a r r IRF9620, IRF9621, IRF9622, IRF9623 i s s e m i c o n d u c t o r -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V • High Input Impedance These are P-Channel enhancement mode silicon gate

TC227

Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

TC227

Contextual Info: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs

TC227

Abstract: TC1327 IF9220
Contextual Info: Hormis S IRFR9220, IRFU9220 S em icon du cto r y 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs September 1998 Description Features 3.6A, 200V r DS ON These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava­

Contextual Info: IRFF9220 Data Sheet Title FF9 0 bt A, 0V, -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs Features These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are P-Channel

IRFD9220

Contextual Info: IRFD9220 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET File Number 2286.3 Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of