10TOX Search Results

50N06LE

Contextual Info: J W S S em icon du cto r RFG50N06LE, RFP50N06LE, RF1S50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

lambda IC 101

Abstract: AN7254 AN7260 ITF86172SK8T MS-012AA TB370 vj04
Contextual Info: ITF86172SK8T interrii January. m i Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET File Number 4809.1 Features • Ultra Low On-Resistance Packaging ‘ rDS ON = 0 .0 1 6£i, v gs = - 1 0 V S 0 8 (JEDEC MS-012AA) ‘ rDS(ON) = 0.023i2, VGS = - 4 .5 V

76105DK8

Contextual Info: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

F10P03L

Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac­ tured using the MegaFET process. This process, which uses

60P06E

Abstract: 6b69e RS111
Contextual Info: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l

Contextual Info: P *3 3 S RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

75307D

Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet March 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75332G3, HUF75332P3, HUF75332S3S Semiconductor Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.

AN7254

Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
Contextual Info: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited

65e9

Abstract: TB370 AN7254 AN7260 ITF86116SQT
Contextual Info: ITF86116SQT interrii 10A, 30 V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET mi J a n u a ry . Data Sheet File Number 4808.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.012£i, VGs = 10V Packaging ‘ rDS(ON) = 0.016£i, VGs = 4.5V TSSOP8 • Gate to Source Protection Diode

TSOP-6 .54

Abstract: AN7254 AN7260 ITF87012SVT SC-95 TB370
Contextual Info: ITF87012SVT interrii January. m i Data Sheet PRELIMINARY 6A, 20 V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET File Number 4810.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.035i2, VGs = 4.5V Packaging ‘ rDS(ON) = 0.038i2, VGs = 4.0V TSOP-6

KP120

Contextual Info: HUF76132P3, HUF76132S3S S em iconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: RFT2P03L Semiconductor October 1998 Data Sheet 2.1 A, 30 V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET File Number 4574.1 Features • 2.1 A, 30V This product is a P-Channel power M O S F E T manufactured • r DS ON = 0 .1 5 0 i2 using the M eg aF E T process. This process, which uses

75639p

Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3, HUF75639S3S Semiconductor October 1998 Data Sheet 53A, 100V, 0.028 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.3 Features 5 3 A ,1 0 0 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This

fp50n06

Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
Contextual Info: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE

in3600

Contextual Info: • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 1N4150 and 1N4150-1 and 1N3600 •SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED . DOUBLE PLUG CONSTRUCTION

76639p

Abstract: AN9321 AN9322 HUF76639P3 HUF76639S3S HUF76639S3ST TB334 76639S 92e2 OT 180
Contextual Info: HUF76639P3, HUF76639S3S interrii Data Sheet November 1999 File Num ber 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SO U R CE DRAIN FLA N G E • Ultra Low On-Resistance ‘ rDS(ON) = 0.026i2, VGS = 10V

AN7254

Abstract: AN7260 ITF87052SVT SC-95 TB370 0190-S
Contextual Info: ITF87052SVT interrii J a n u a ry . Data Sheet PRELIMINARY 3A, 20V, 0.115 Ohm, P-Channel, 2.5V Specified Power MOSFET m File Num ber i 4800.2 Features • Ultra Low On-Resistance ‘ rDS ON = 0-115£2, v q s = -4 .5 V Packaging ‘ rDS(ON) = 0-120£2, v q s = -4 .0 V

75639p

Abstract: 75639G
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3, HUF75639S3S Semiconductor October 1998 Data Sheet 53A, 100 V, 0.028 Ohm, N-Channel UltraFET Power MOSFETs File Num ber 4477.3 Features • 53A,100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This

61E2

Contextual Info: HUF76131SK8 November 1998 Data Sheet 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative w UltraFET process. This advanced

Contextual Info: HUF75329D3, HUF75329D3S Semiconductor March 1999 Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75344G

Abstract: 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST
Contextual Info: interrii HUF75344G3, HUF75344P3, HUF75344S3S January 2000 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,