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onsemi HUF75344P3 - Rail/Tube (Alt: HUF75344P3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HUF75344P3	Tube		24 Weeks	800	1 - 10 - 100 - 1000 $1.42 10000 $1.38	Buy Now
Mouser Electronics	HUF75344P3		981			1 $4.69 10 $3.07 100 $2.29 1000 $2.12 10000 $1.73	Buy Now
Newark ()	HUF75344P3	Cut Tape			1	1 $2.17 10 $2.17 100 $2.17 1000 $2.17 10000 $2.17	Buy Now
	HUF75344P3	Bulk			150	1 - 10 - 100 - 1000 $2.11 10000 $1.98	Buy Now
Rochester Electronics	HUF75344P3		433		1	1 - 10 - 100 $1.42 1000 $1.27 10000 $1.19	Buy Now
TME	HUF75344P3		127		1	1 $3.28 10 $2.23 100 $2.09 1000 $2.09 10000 $2.09	Buy Now

Avnet Asia	HUF75344P3			24 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	HUF75344P3		50	25 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	HUF75344P3			26 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	HUF75344P3					1 $2.54 10 $2.54 100 $2.54 1000 $1.59 10000 $1.59	Buy Now
Harris Semiconductor HUF75344P3 Trans MOSFET N-CH Si 55V 75A 3-Pin(3+Tab) TO-220 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HUF75344P3		476			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	HUF75344P3		4,923		1	1 - 10 - 100 $1.42 1000 $1.27 10000 $1.19	Buy Now

75344P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
75344g Abstract: 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334 Contextual Info: HUF75344G3, 75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75344g3 huf75344p3 huf75344s3s 75344g +375344p huf75344s3st tb334	PDF
75344G Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334 Contextual Info: HUF75344G3, 75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75344g3 huf75344p3 huf75344s3s 75344g +375344p huf75344s3st tb334	PDF
Contextual Info: HUF75344G3, 75344P3, HUF75344S3S Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75344g3 huf75344p3 huf75344s3s	PDF
Contextual Info: HUFA75344G3, 75344P3, HUFA75344S3S, HUFA75344S3 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75344g3 hufa75344p3 hufa75344s3s hufa75344s3	PDF
Contextual Info: HUF75344G3, 75344P3, HUF75344S3S Semiconductor Data Sheet March 1999 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75344g3 huf75344p3 huf75344s3s 32e-3 +652e-2 41e-1 13e-1 83e-2 huf75344 15e-3	PDF
75344G Contextual Info: HUF75344G3, 75344P3 Data Sheet N-Channel UltraFET Power MOSFET 55 V, 75 A, 8 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding	Original	huf75344g3 huf75344p3 75344g	PDF
75344G Abstract: 75344 fairchild to-220ab 75344P 75344P HUFA75344G3 HUFA75344P3 HUFA75344S3 HUFA75344S3S HUFA75344S3ST TB334 Contextual Info: HUFA75344G3, 75344P3, HUFA75344S3S, HUFA75344S3 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75344g3 hufa75344p3 hufa75344s3s hufa75344s3 +675344g 75344 fairchild to-220ab 75344p 75344p hufa75344s3st tb334	PDF
75344G Abstract: 75344p HUF75344P3 HUF75344G3 HUF75344S3S HUF75344S3ST TB334 Contextual Info: HUF75344G3, 75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75344g3 huf75344p3 huf75344s3s 75344g +375344p huf75344s3st tb334	PDF
75344G Abstract: 75344P 75344 HUFA75344G3 HUFA75344P3 HUFA75344S3 HUFA75344S3S HUFA75344S3ST TB334 HUFA75344 Contextual Info: HUFA75344G3, 75344P3, HUFA75344S3S, HUFA75344S3 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75344g3 hufa75344p3 hufa75344s3s hufa75344s3 +675344g 75344p 75344 hufa75344s3st tb334 hufa75344	PDF
75344G Abstract: 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST Contextual Info: interrii HUF75344G3, 75344P3, HUF75344S3S January 2000 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75344g3 huf75344p3 huf75344s3s 75344g +675344p 75344 relay tc1 ta75344 huf75344 huf75344s3st	PDF
75344G Abstract: HUF75344G3 75344P HUF75344P3 HUF75344S3S HUF75344S3ST TB334 Contextual Info: HUF75344G3, 75344P3, HUF75344S3S Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75344g3 huf75344p3 huf75344s3s 75344g +375344p huf75344s3st tb334	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-intersil ms-012aa mo-153aa rf1k49090 +16rf1k49093 rf1k49092 itf87056dqt itf87072dk8t itf87008dqt rf1k49223 65e9 transistor transistor 75307d transistor 65e8 sd mosfet drive datasheet 4468 8 pin g40n60 rhr15120 equivalent 10n120bnd 76107d transistor 76121d emerson three phase dc motor driver service note	PDF
75344G Abstract: 75344P 75344 HUFA75344G3 HUFA75344P3 HUFA75344S3S HUFA75344S3ST TB334 HUFA75344 Contextual Info: HUFA75344G3, 75344P3, HUFA75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75344g3 hufa75344p3 hufa75344s3s 75344g +575344p 75344 hufa75344s3st tb334 hufa75344	PDF
75344G Abstract: HUFA75344S3ST TB334 75344P HUFA75344G3 HUFA75344P3 HUFA75344S3S Contextual Info: HUFA75344G3, 75344P3, HUFA75344S3S Data Sheet November 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75344g3 hufa75344p3 hufa75344s3s 75344g +3hufa75344s3st tb334 75344p	PDF

Contextual Info: HUF75344G3, 75344P3, HUF75344S3, HUF75344S3S Semiconductor Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75344g3 huf75344p3 huf75344s3 huf75344s3s +1o-263ab	PDF
75344G Contextual Info: HUFA75344G3, 75344P3, HUFA75344S3S TM Data Sheet November 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75344g3 hufa75344p3 hufa75344s3s 75344g	PDF
75344G Abstract: 75344P HUF75344G3 75344s TA75344 Contextual Info: interrii HUF75344G3, 75344P3, HUF75344S3S Data S heet Ja n u a ry 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75344g3 huf75344p3 huf75344s3s an7254 +5an7260 75344g 75344p 75344s ta75344	PDF
fairchild to-220ab 75344P Abstract: 75344G 75344P 75344P FAIRCHILD HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334 Contextual Info: HUF75344G3, 75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75344g3 huf75344p3 huf75344s3s fairchild to-220ab 75344p +575344g 75344p 75344p fairchild huf75344s3st tb334	PDF