if9220
Abstract: TC227 irfu9220 IRFR9220 TB334
Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching
|
Original
|
irfr9220irfu9220ta17502if9220+2tc227tb334
|
PDF
|
if9220
Abstract: TC227 irfu9220 IRFR9220
Contextual Info: IRFR9220, IRFU9220 S E M I C O N D U C T O R 3.6A, 200V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 3.6A, 200V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 1.500Ω • Temperature Compensating PSPICE Model
|
Original
|
irfr9220irfu9220o-251aa170e-12+51e-3073e-695e-3if9220tc227
|
PDF
|
TC227
Abstract: irfu9220 IF9220 IRFR9220 TB334
Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching
|
Original
|
irfr9220irfu9220ta17502tc227+2if9220tb334
|
PDF
|
TC227
Contextual Info: IRFR9220, IRFU9220 Data Sheet 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching
|
Original
|
irfr9220irfu9220ta17502tc227 |
PDF
|
TC227
Contextual Info: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
Original
|
irfr9220irfu9220ta17502tc227 |
PDF
|
TC227
Abstract: TC1327 IF9220
Contextual Info: Hormis S IRFR9220, IRFU9220 S em icon du cto r y 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs September 1998 Description Features 3.6A, 200V r DS ON These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava
|
OCR Scan
|
irfr9220irfu922005e-328e-5+8170e-121e-3010tox73e-695e-3tc227tc1327if9220
|
PDF
|