IRFR320 Search Results

IRFR320PBF

Abstract: IRFR320TRL
Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)

Contextual Info: IRFR320 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 400 V 1.8Î2 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 3.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

IFU320

Abstract: ifr320 fu320
Contextual Info: IRFR320, IR FU320 S e m iconductor Data Sheet 3.1 A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

inductor 1 mH

Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 1.8 Available • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) 20 Qgs (nC)

Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)

ifu320

Abstract: ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334
Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

ifu320

Abstract: ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404
Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRFR320

Abstract: IRFU320 SiHFR320 SiHFR320-E3 SiHFR320-GE3 SiHFU320
Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)

IRFU320PBF

Abstract: IRFU120 U120 IRFR320PBF
Contextual Info: PD-95013A IRFR320PbF IRFU320PbF • Lead-Free 1 IRFR/U320PbF 2 IRFR/U320PbF I-Pak TO-251AA Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRF U120 WIT H ASS EMBLY LOT CODE 5678 ASS EMB LED ON WW 19, 1999

TO-252AA Package

Contextual Info: PD - 95013 IRFR320PbF IRFU320PbF • Lead-Free www.irf.com 1 2/13/04 IRFR/IRFU320PbF 2 www.irf.com IRFR/IRFU320PbF www.irf.com 3 IRFR/IRFU320PbF 4 www.irf.com IRFR/IRFU320PbF www.irf.com 5 IRFR/IRFU320PbF 6 www.irf.com IRFR/IRFU320PbF D-Pak TO-252AA Package Outline

irf P-CHANNEL

Abstract: EIA-541 IRFR120 IRFU120 U120 IRF gate driver DT marking code DIODE MARKING 541 IRF GATE LOGIC Marking code DV
Contextual Info: PD-95013A IRFR320PbF IRFU320PbF • Lead-Free www.irf.com 1 12/13/04 IRFR/U320PbF 2 www.irf.com IRFR/U320PbF www.irf.com 3 IRFR/U320PbF 4 www.irf.com IRFR/U320PbF www.irf.com 5 IRFR/U320PbF 6 www.irf.com IRFR/U320PbF Peak Diode Recovery dv/dt Test Circuit

IRFR320

Abstract: 100 W POWER MOSFET
Contextual Info: IRFR320 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD "I - 8 ^ 3.1 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

U321

Abstract: U320 DIODE s31a IRFR321 ui 321
Contextual Info: N-CHANNEL POWER MOSFETS IRFR320/321 IRFU320/321 FEATURES D-PAK • Low er R ds < on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR320 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

ifu320

Abstract: IFR321 ifr320 IRFU320
Contextual Info: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 H A R R IS SEMICONDUCTOR 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1 A, 350V and 400V These are N-Channel enhancement mode silicon gate

Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D DPAK (TO-252)

irfr320

Abstract: U320 DIODE 322 mosfet U322
Contextual Info: N-CHANNEL POWER MOSFET IRFR320/322 IRFU320/322 FEATURE • • • • • • • D-PACK Lower R d s ON Improved inductive ruggedess Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area Improved high temperature reliability

Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) () VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D Dynamic dV/dt Rating

Contextual Info: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

EIA-541

Abstract: IRFR120 IRFU120 U120 IRFR320PBF
Contextual Info: PD-95013A IRFR320PbF IRFU320PbF • Lead-Free Document Number: 91273 12/13/04 www.vishay.com 1 IRFR/U320PbF Document Number: 91273 www.vishay.com 2 IRFR/U320PbF Document Number: 91273 www.vishay.com 3 IRFR/U320PbF Document Number: 91273 www.vishay.com 4 IRFR/U320PbF

Contextual Info: IRFR320 Advanced Power MOSFET FEATURES B ^dss - 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD "I 3.1 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

IRFR320

Abstract: irfu320 SiHFU320 SiHFR320 SiHFR320-E3 SiHFR320-GE3 IRFR320TRLPBF IRFU320PBF
Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)

IRFR320

Abstract: marking 33a irfu320 AN-994 1RFR32Q
Contextual Info: PD-9.598A International IrâR Rectifier IRFR320 IRFU320 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR320 Straight Lead (IRFU320) Available in Tape & Reel Fast Switching Ease of Paralleling

Contextual Info: MÔSSMS5 OOlSbTM Abb International S ii Rectifier PD-9.598A IRFR320 IRFU320 HEXFET Power M O SFET • • • • • • • IINR INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR320 Straight Lead (IRFU320)