IRFR3209A Search Results

IRFR3209A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFR3209A		Fairchild Semiconductor	3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs	Original	PDF	117.03KB	7
IRFR3209A		Fairchild Semiconductor	3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFET	Original	PDF	85.35KB	7
IRFR3209A		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	39.33KB	1

IRFR3209A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IFU320 Abstract: ifr320 fu320 Contextual Info: IRFR320, IR FU320 S e m iconductor Data Sheet 3.1 A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	IRFR320, FU320 IRFU320 IFU320 ifr320 fu320	PDF
ifu320 Abstract: ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334 Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	IRFR320, IRFU320 TA17404. ifu320 ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334	PDF
ifu320 Abstract: ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404 Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	IRFR320, IRFU320 TA17404. ifu320 ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404	PDF
Contextual Info: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 RFR322,	PDF
ifr320 Abstract: ifu320 irfu320 IRFR320 IRFR3209A TA17404 TB334 Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	IRFR320, IRFU320 TA17404. ifr320 ifu320 irfu320 IRFR320 IRFR3209A TA17404 TB334	PDF