IFR320 Search Results

IFU320

Abstract: ifr320 fu320
Contextual Info: IRFR320, IR FU320 S e m iconductor Data Sheet 3.1 A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

ifu320

Abstract: ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334
Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

ifu320

Abstract: ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404
Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IFR320

Contextual Info: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

ifr320

Contextual Info: IRF320, IRF321 IRF322, IRF323 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

IFR320

Abstract: IRF322 IRF320
Contextual Info: IRF320, IRF321 IRF322, IRF323 HARRIS S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V • High Input Im pedance These are N-Channel enhancement mode silicon gate

ifr320

Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202
Contextual Info: IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

ifu320

Abstract: IFR321 ifr320 IRFU320
Contextual Info: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 H A R R IS SEMICONDUCTOR 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1 A, 350V and 400V These are N-Channel enhancement mode silicon gate

Contextual Info: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

ifr320

Abstract: ifu320 irfu320 IRFR320 IRFR3209A TA17404 TB334
Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

ifu320

Abstract: IFR321 ifr320 IRFR322 IFU321 IRFU322 IRFR320 IRFR321 IFR322 irfu320
Contextual Info: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 S E M I C O N D U C T O R 2.6A and 3.1A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1A, 350V and 400V These are N-Channel enhancement mode silicon gate