IRF323 Search Results

IRF3205 application

Abstract: irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2
Contextual Info: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†

Contextual Info: IRF323 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)2.8 I(DM) Max. (A) Pulsed I(D)1.8 @Temp (øC)100 IDM Max (@25øC Amb)11 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-55õ

IRF3205 application

Abstract: IRF3205 IR IRF3205S
Contextual Info: PD - 9.1304B International IQ R Rectifier IRF3205S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF32305S • Low-profile through-hole (IRF3205L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V

IFR320

Contextual Info: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

ifr320

Contextual Info: IRF320, IRF321 IRF322, IRF323 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

IFR320

Abstract: IRF322 IRF320
Contextual Info: IRF320, IRF321 IRF322, IRF323 HARRIS S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V • High Input Im pedance These are N-Channel enhancement mode silicon gate

ifr320

Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202
Contextual Info: IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

AN-994

Abstract: IRF3205 IRF3205L
Contextual Info: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†

IRF3205 equivalent

Abstract: IRF3205 application datasheet for IRF3205 IRF3205 ups IRF3205 irf3205 DRIVER irf3205 mosfet transistor marking F53 AN-994 IRF3205L
Contextual Info: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†

IRF322

Abstract: IRF320 250M IRF321 IRF323
Contextual Info: Standard Power MOSFETs- IRF320, IRF321, IRF322, IRF323 File Number 1569 Power MOS Field-Effect Transistors N-CHANNEL EN HANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.5A and 3.0A, 350V-400V

9314h

Abstract: International Rectifier MOSFET 443 K 3911 1RF322
Contextual Info: HE 0 I Mfl5SMS2 QOQTlEâ 1 | Data She£t No. PO-9.314H T - ¿ 7 -^ INTERNATIONAL RECTIFIER INTERNATIONAL- RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED' IR F320 HEXFET TRANSISTORS IRF321 1RF322 IRF323 N-CHANNEL Product Summary 400 Volt, 1.8 Ohm HEXFET

IRF320

Contextual Info: IRF320, IRF321 IRF322, IRF323 33 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Package F e a tu re s T O -2 0 4 A A • 2.8A and 3.3A , 3 5 0 V - 4 0 0V BOTTOM VIEW • r D S o n = 1 - 8 f î a n d 2 .5 C I • S O A is P o w er-D issip atio n Lim ited

IRF3205 application

Abstract: IRF32305S marking za mosfet MOSFET MARKING ZA
Contextual Info: PD - 9.1304B International IQ R Rectifier IRF3205S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V R d s (oh) = 0.008Q

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

DATA SHEET IRF331

Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
Contextual Info: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I ' < O Ò ' ' ' lO ' ' ' ' ' I o o r i mm | ioom m I I j j CO 00 CO CO j j ' L -^ ^ l I I c\i CM i

irf840

Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Contextual Info: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j

1RF321

Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

irf250

Abstract: IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPW R-6502 HPW R-6503 HPW R-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO -3 TO -3 TO -3 TO -3 100 120 140 160 180 200

irf150

Abstract: VN64GA 2SK134 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPW R-6501 H P W R -6502 H P W R -6503 H P W R -6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 T O -3 T O -3 T O -3 T O -3 100 120

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

5109d

Contextual Info: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

BUZ24

Abstract: IRF540 2sk135 equivalent 2SJ49 2SJ54 HPWR 6501 2SK132 2SK133 VN67AF HPWR-6503
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160

MTM2N85

Abstract: IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D VN0801D
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o P fi c | I O O I I I P I I I | I I j j CO00 COCO j j ' I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i

irf420

Abstract: IRF823 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350