SIHFR320 Search Results
SIHFR320 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIHFR320-GE3 | Vishay Siliconix | MOSFET N-CH 400V 3.1A DPAK | Original | 818.98KB | |||
| SIHFR320TR-GE3 | Vishay Siliconix | MOSFET N-CHANNEL 400V | Original | 818.98KB | 11 | ||
| SIHFR320TRL-GE3 | Vishay Siliconix | MOSFET N-CHANNEL 400V | Original | 818.98KB | 11 |
SIHFR320 Price and Stock
Vishay Intertechnologies SIHFR320TR-GE3Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIHFR320TR-GE3 | 1 |
|
Get Quote | |||||||
|
SIHFR320TR-GE3 | Tape & Reel | 8 Weeks | 2,000 |
|
Buy Now | |||||
|
SIHFR320TR-GE3 | 596 |
|
Buy Now | |||||||
|
SIHFR320TR-GE3 | Bulk | 2,000 |
|
Buy Now | ||||||
|
SIHFR320TR-GE3 | Reel | 2,000 |
|
Buy Now | ||||||
|
SIHFR320TR-GE3 | 15 Weeks | 2,000 |
|
Get Quote | ||||||
Vishay Intertechnologies SIHFR320-GE3Transistor: N-MOSFET; unipolar; 400V; 2A; Idm: 12A; 42W; DPAK,TO252 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
SIHFR320-GE3 | 1 |
|
Get Quote | |||||||
|
|
SIHFR320-GE3 | Tape & Reel | 8 Weeks | 3,000 |
|
Buy Now | |||||
|
|
SIHFR320-GE3 | 8,025 |
|
Buy Now | |||||||
|
|
SIHFR320-GE3 | Reel | 3,000 |
|
Buy Now | ||||||
|
|
SIHFR320-GE3 | 15 Weeks | 75 |
|
Get Quote | ||||||
Vishay Intertechnologies SIHFR320TRL-GE3MOSFET N-CHANNEL 400V - Tape and Reel (Alt: SIHFR320TRL-GE3) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
SIHFR320TRL-GE3 | Tape & Reel | 8 Weeks | 3,000 |
|
Buy Now | |||||
|
|
SIHFR320TRL-GE3 |
|
Get Quote | ||||||||
|
|
SIHFR320TRL-GE3 | Bulk | 3,000 |
|
Buy Now | ||||||
|
|
SIHFR320TRL-GE3 | Reel | 3,000 |
|
Buy Now | ||||||
Vishay Intertechnologies SIHFR320GE3POWER MOSFET Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIHFR320GE3 | 6,000 |
|
Get Quote | |||||||
SIHFR320 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRFR320PBF
Abstract: IRFR320TRL
|
Original |
irfr320irfu320sihfr320sihfu320+4 | |
inductor 1 mHContextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 1.8 Available • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) 20 Qgs (nC) |
Original |
irfr320irfu320sihfr320sihfu320+6 | |
|
Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320) |
Original |
irfr320irfu320sihfr320sihfu320+2 | |
|
Contextual Info: SiHFR320_RC, SiHFU320_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
Original |
sihfr320sihfu320an609configur10+4 | |
IRFR320
Abstract: IRFU320 SiHFR320 SiHFR320-E3 SiHFR320-GE3 SiHFU320
|
Original |
irfr320irfu320sihfr320sihfu320+4 | |
|
Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320) |
Original |
irfr320irfu320sihfr320sihfu320+2 | |
|
Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D DPAK (TO-252) |
Original |
irfr320irfu320sihfr320sihfu320+5 | |
|
Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) () VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D Dynamic dV/dt Rating |
Original |
irfr320irfu320sihfr320sihfu320+2 | |
IRFR320
Abstract: irfu320 SiHFU320 SiHFR320 SiHFR320-E3 SiHFR320-GE3 IRFR320TRLPBF IRFU320PBF
|
Original |
irfr320irfu320sihfr320sihfu320+6 | |
IRFR320TRLContextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) () VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D Dynamic dV/dt Rating |
Original |
irfr320irfu320sihfr320sihfu320+3 | |
IRFU320PBF
Abstract: irfr320 IRFU320 SiHFR320 SiHFR320-E3 SiHFU320
|
Original |
irfr320irfu320sihfr320sihfu320+7 | |
|
Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320) |
Original |
irfr320irfu320sihfr320sihfu320+2 | |
|
Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Repetitive Avalanche Rated |
Original |
irfr320irfu320sihfr320sihfu320+2 |