F16N06 Search Results

pspice model

Abstract: F16N06 RFD16N06SM9A AN9321 AN7254 AN7260 FIGURE13 RFD16N06 RFD16N06SM mosfet motor dc 48v
Contextual Info: RFD16N06, RFD16N06SM S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 60V JEDEC TO-251AA • rDS ON = 0.047Ω SOURCE DRAIN GATE DRAIN (FLANGE) • Temperature Compensating PSPICE Model

F16N06

Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Contextual Info: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

F16N06

Abstract: 00u2 107E3 *16N06 16N06
Contextual Info: RFD16N06, RFD16N06SM fu HARRIS S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 6 0V • rDS<ON = 0 .0 4 7 U D R A IN F L A N G E ) • Temperature Compensating PSPICE Model

Contextual Info: Hormis S RFD16N06, RFD16N06SM Semiconductor y 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET September 1998 Features Description • 16A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­