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    IF9110 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRFR9110

    Abstract: irfu9110 irfu9220 IRFR91109A TA17541 TB334 TC227
    Contextual Info: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power


    Original     		IRFR9110, IRFU9110 IRFR9110 irfu9110 irfu9220 IRFR91109A TA17541 TB334 TC227 PDF

    IF9110

    Abstract: IRFR9110 2-03E6 TA17541 irfu9110
    Contextual Info: IRFU9110, IRFR9110 ¡31 H a r r i s mu S E M I C O N D U C T O R m “ * m w j mm mm m mw r m m w 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1 A, 100V SOURCE • r DS ON = 1 -2 0 0 i i


    OCR Scan     		IRFU9110, IRFR9110 O-251AA IRFU9110 IRFR9110 23e-14 74e-2 95e-3 30e-6 72e-10 IF9110 2-03E6 TA17541 PDF

    s276

    Abstract: fr9110 PLIC 9110
    Contextual Info: & IRFU9110, IRFR9110 M A « 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D e ce m b e r 1995 Features Packaging JEDEC T O -251A A • 3.1 A, 100V • r DS ON = 1 -200i i • Temperature Compensating PSPICE Model DRAIN (FLANGE)


    OCR Scan     		IRFU9110, IRFR9110 -251A -200i 23e-14 74e-2 95e-3 30e-6 72e-10 45e-7) s276 fr9110 PLIC 9110 PDF

    irfu9220

    Abstract: irfu9110 la 4001 IRFR9110 IRFR91109A TA17541 TB334
    Contextual Info: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power


    Original     		IRFR9110, IRFU9110 irfu9220 irfu9110 la 4001 IRFR9110 IRFR91109A TA17541 TB334 PDF

    IF9110

    Contextual Info: & IRFU9110, IRFR9110 3.1 A, 100V, A valanche Rated, P-Channel E nhancem ent-M ode Pow er MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1A, 100V ■ r DS<ON SOURCE = 1-200Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    OCR Scan     		IRFU9110, IRFR9110 O-251AA 1-200Q IRFU9110 IRFR9110 39e-4 87e-5) 31e-10 1e-30 IF9110 PDF

    RS507

    Abstract: irfu9220 IRFR9110 IRFR91109A IRFU9110 TA17541 TB334 TC227
    Contextual Info: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power


    Original     		IRFR9110, IRFU9110 RS507 irfu9220 IRFR9110 IRFR91109A IRFU9110 TA17541 TB334 TC227 PDF

    IF9110

    Abstract: IRFR9110 IRFR91109A IRFU9110 TA17541
    Contextual Info: IRFU9110, IRFR9110 S E M I C O N D U C T O R 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs January 1996 Features Packaging JEDEC TO-251AA • 3.1A, 100V • rDS ON = 1.200Ω • Temperature Compensating PSPICE Model SOURCE DRAIN GATE


    Original     		IRFU9110, IRFR9110 O-251AA IRFU9110 IRFR9110 31e-10 1e-30 25e-4 03e-6) IF9110 IRFR91109A TA17541 PDF