IRFR222 Search Results

Contextual Info: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: IRFR222 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)3.8 I(DM) Max. (A) Pulsed I(D)2.4 @Temp (øC)100 IDM Max (@25øC Amb)15 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)42 Minimum Operating Temp (øC)-55õ

Contextual Info: 11E D | INTERNATIONAL R E C T I F I E R 4055 45 2 0 0 00 3 0 0 4 | Data Sheet No. PD-9.525A T -35-25 IN T E R N A T IO N A L R E C T IF IE R IOR AVALANCHE AND dv/dt RATED HEXFET IRFR220 TRANSISTORS IRFR222 IRFU220 N -C H A N N E L IRFU222 Product Summary 200 Volt, 0.80 Ohm HEXFET

irfb220

Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
Contextual Info: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111

ifr220

Abstract: IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220
Contextual Info: IRFR220, IRFR221, IRFR222, IRFU220, IR FU221, IRFU222 H A R R IS SEMICONDUCTOR 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate

ifr220

Abstract: IFU220 IRFU220 irfr220 IRFR222 IRFU221
Contextual Info: IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 S E M I C O N D U C T O R 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

irc832

Contextual Info: H EXFET Power MOSFETs International S Rectifier H EXSense Current Sensing N-Channel Part Number IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current 2S°C Casa (Amps) >DM Pu'*

RF1S42N03L

Contextual Info: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM

FR220

Abstract: IFU220 IRFU N-Channel Power MOSFETs FR 220 IRFU ir 222 IRF N-Channel Power MOSFETs RC 4565 IFU221
Contextual Info: m Ha r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Pa cka ges Features T O -2 5 1 A A T O P VIEW • 3.8A and 4.6A, 150V and 200V • rDS on = 0.80fi and 1.2fl >S O U R C E • Single Pulse Avalanche Energy Rated

IRFR012

Abstract: IRFR411
Contextual Info: FUNCTION GUIDE POWER MOSFETs D-PAK N-CHANNEL BVdss V ID(onXA) RDS(onX0) 50.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.300 0.200 0.120 0.120 0.100 IRFR012 IRLR010 IRFR010 IRFR022 IRLR020 IRFR020 60.00 6.70 8.20 8.20 14.00 15.00 15.00 0.300 0.200 0.300 0.120

IRFU220

Abstract: IRFR220 U222 irfu220 samsung J50V IRFR222 G31* Diode B51A 222 diode
Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7 *lh4m S IKFH220/222 IRFU220/222 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 0 Q 1 2 3 MG ITS « S H G K D-PACK Lower Rds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

IRFP9640

Abstract: 1RFR320 IRFP9610 IRFP9640 SAMSUNG IRFR120 IRFP9630 IRFP9622 D-PAK IRFP9621 IRFP9631
Contextual Info: - 302 - §y =s tt f m t Vd s or « A £ Vg s Vd g % V (V) fë (Ta=25tO ) Id it Ig s s Pd * /CH * /CH (A) m V g s th) loss (nA) Vg s (V) < m A) Vd s (V) min max (V) (V) % fà 1D (nA) tä (Ta=25cC ) lö(on) Ds(on) Vd s = Vg s Ciss g fs Coss B Crss V g s =0

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

IRFP9640

Abstract: IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020 IRFR120 IRFR121
Contextual Info: - SI € tt f « r Vd s or € ± * Vd g ft V £ Vg s (V) 1 *£ (Ta=25tC ) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) n ft '14 Ciss 9 fs Coss Crss ft B ffi % V g s =0 (max) *typ V g s (V) (0) Id (A) *typ

sot89 footprint

Abstract: INTERNATIONAL RECTIFIER 9516 9524 IRFR20 IRFS1Z0 T0252AA 9519 9520
Contextual Info: SURFACE MOUNT HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER lIO R l *4Ö S S 4 S 2 2bE D QG1DSS2 ~T~3c -03 Ô • Surface Mount Packages N-CHANNEL Types Vos Q max) V Iq cont Tq - 25°C 'DM pulsed PD max A A W r 0S(0N) Bulletin IRFS1Z3 60 3.20 0.75

IRFS1Z3

Abstract: IRFR121 IRFR014 IRFR024 IRFR110 IRFR111 IRFR120 IRFR210 IRFR212 IRFR220
Contextual Info: SURFACE MOUNTED DEVICES INTERNATIONAL RECTIFIER ICR O ' CONTENTS E- Page p- APPLICATION DETAILS DIODES — SCHGTTKY — STANDARD RECOVERY — ULTRA FAST RECOVERY ENCAPSULATED BRIDGES FOOTPRINT AND PAD DIMENSIONS HEXFETs MILITARY CAPABILITY OUTLINES TAPE REEL INFORMATION

IRC540

Abstract: irfs1z0 IRCB40 irfs1z3 irFR9024 HEXFET IRCZ34 IRC832 IRC840 *FR9110 THOMSON 58E
Contextual Info: THOMSON/ DISTRIBUTOR 5ÖE TCSK D HEXFET Power MOSFETs International S»] Rectifier HEXSense Current Sensing N-Channel Part Number Vq s Drain Source Voltage Volts IRCZ24 IRCZ34 IRCZ44 IRC531 IRC530 IRC540 IRC630 IRC640 IRC634 IRC644 IRC730 IRC740 IRC832 IRC830

IRFS1Z0

Abstract: IRFS1Z3 irfb220 irfu310 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212
Contextual Info: - SI € tt f « ± r Vd s £ Vgs *£ 1 T a = 2 5 tC Ig s s Pd Id Id s s Vg s th) or € n ft ft f Ds(on) Vd s = '14 lD(on) Ciss 9 fs Coss Crss * Vd g (V) (V) * /CH * /CH (A) (W) (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) (max) Id (mA) ft B ffi % Vg s =0