IB4142 Search Results

KS0065 332

Abstract: a 4504 KS0068 20405 lcd display M37D 4053 IC circuit diagram Digital Pulse Counter Two Digit fcd 5250 IC CHIP 5270 ks0065
Contextual Info: CMOS DIGITAL INTEGRATED CIRCUIT KS0068 DOT MATRIX LCD CONTROLLER & DRIVER The KS0068 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology 100 QFP FUNCTION • Character type dot m atrix LCD driver & controller • Internal driver: 16 common and 60 segment signal output.

KM428C257

Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Contextual Info: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual

KM29N040T

Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Contextual Info: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective

KMM5321000BV-7

Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns

SSH60N10

Abstract: 21133 250M SSH60N08
Contextual Info: N-CHANNEL POWER MOSFETS SSH60N10/08 FEATURES • • • • • • • Lower R ds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: KM44C 1 003 DJ CMOS D R AM ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , powér

Contextual Info: KS7212 TIMING & SYNC. GENERATOR FOR B/W CCD GENERAL DESCRIPTION The KS7212 is a CMOS integrated circuit designed for making various timing pulses for B/W CCD camera. FEATURES - Compatible with both EIA and CCIR mode EIA: KC73125(U -M, CCIR : KC73129(U)-M)

KM44C4000B

Contextual Info: KM44C4000B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D • 7=11,4145 G O l b S D ? 3T4 H S M ä K KM428C64 CMOS VIDEO RAM 64K X 8 Bit CMOS Video RAM FEATURES ■ Dual port Architecture 64K x 8 bits RAM port 256 x 8 bits SAM port - Performance range : The Samsung KM428C64 is a CMOS 64K x 8 bit Dual Port

Contextual Info: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KA7522 ELECTR O NICS Industrial BALLAST CONTROL 1C 22 SDIP The KA7522 is a electronic ballast controller for fluorescent inverter syst­ ems. It contains whole function in KA7521, current feed back and prehea­ ting time controlled by temperature sensing.

Contextual Info: KA8513B FM IF RECEIVER INTRODUCTION The KA8S13B is designed for FM IF Detection on the pager set It includes voltage regulator, low battery detection circuit. Mixer, Oscillator. FS K comparator and limiting IF Amplifier. FEATURES • Operating Voltage Range: 1.0 ~ 4.0V

Contextual Info: KA7577 ELECTRO NICS I ndus t r i a] HIGH-PERFORMANCE PWM CONTROLLERS 16 DIP KA7577 is fixed frequency PWM controller and specially designed for SMPS to get regulated DC voltage from AC power supply. This integrated circuit has so fast rise and fall output pulse that it can directly drive power transistor

km62256alg

Contextual Info: SAMSUNG ELECTRONICS INC _ 4 SE I> T ^ b Ml Mg D D lD 7 fl fl ÜHSNGK CMOS SRAM KM62256ÄLPI/KM62256ALGI : - : 3 2 K X 8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range: - 4 0 to 8 5 °C

Contextual Info: Advanced Power MOSFET S F W /I9 6 3 0 FEATURES B V dss = -2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology RüS on = 0 -8 ß ■ Lower Input Capacitance lD = -6 .5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VOS-2 0 0 V

Contextual Info: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary

8A1 op

Abstract: KM44S16030A
Contextual Info: KM44S16030A CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION . JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency 2 & 3 Burst Length (1, 2, 4, 8 & full page)

KMM374S803AT-G2

Contextual Info: NEW JEDEC SDRAM MODULE KM M374S803AT KMM374S803AT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM374S803AT is a 8M bit x 72 Synchronous - Performance range

KS88C4204

Abstract: KS88C4208 samsung dmb 44-QFP-1010
Contextual Info: KS88C4204 ELECTRONICS M icrocontroller DESCRIPTION The KS88C4204 and KS88C4208 single-chip microcontrollers are fabricated using an advanced CMOS process. The only difference between the two devices is ROM size: the "4204" has a 4-Kbyte ROM and the "4208” has an

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: KM44C1012A-7 KM44C1012A-8 KM44C1012A-10 tnAC tcAc I rc

Contextual Info: CMOS DRAM KM416C1200A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC KM416C1200A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1200A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1200A-8/A-L8/A-F8 80ns 20ns

Contextual Info: UNIVERSAL SPEECH NETWORK KA8603 INTRODUCTION The KA8603 can fulfill the standards o f other countries by changing the external com ponent. D ynam ic or piezoelectric type can be used with receiver. Each gain is controlled with AG C in accordance with the line current. The KA8603 can be operated down to

Contextual Info: SAM SUN G E L E C T R O N I C S 42E » INC B 7Tb41M2 001113b 3 H S M G K KM 23C 4000A CMOS MASK ROM ¡-v q c -B -fS 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4Q00A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using

3171S

Contextual Info: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND