KM62256 Search Results

KM62256C

Abstract: KM62256CL km62256cls KM62256CL-7
Contextual Info: CMOS SRAM KM62256CL / CL-L 32Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 55, 7 0 n s M ax. ■ Low P o w e r D issip a tio n S ta n d b y (C M O S ): 5 5 0 |iW (m a x.) L V e rsio n 1 1 0 |iW (m a x.) LL V e rsio n

22W04

Abstract: KM62256CLG-LV KM62256CLRG-LV KM62256CLTG-LV
Contextual Info: KM62256CL-LV CMOS SRAM 32,768 WORD x 8 Bit Extended Voltage OperationCMOS Static RAM FEATURES • Extended Operating Voltage : 3.0-5.5V • Fast Access Time -3.3V Operation : 100ns Max. -5V Operation : 70ns(Max.) • Low Power Dissipation Standby operating

KM62256D

Abstract: KM62256DLI-L KM62256DL-L km62256
Contextual Info: KM62256D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision HSstorv Revision No History Draft Data Remark 0.0 Initial draft M ay 18th 1997 Design target 0.1 First revision - KM62256DLVDLI Isbi = 100 -> 50|xA K M 6 2256D L-L Is b i = 20 - > 1 0 |iA

28DIP600

Abstract: KM62256CLP-7 KM62256C KM62256CL KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L KM62256CL-L
Contextual Info: KM62256C Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Advance information February 12th 1993 Design target 0.1 Initial draft November 2nd 1993 Preliminary 1.0 Finalize September 24th 1994

Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 00002^ KM62256A/KM62256AL 1 ■ CMOS SRAM 3 2 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 60, 100, 120 ns max . • Low Power Dissipation Standby: 0.55mW (max.) Operating: 248mW (max.) • Low Data Retention Current: 50jiA (max.)

Contextual Info: CMOS SRAM KM62256CL/CL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time : 55, 70, 8 5 , 100ns Max. • Low P o w e r Dissipation S tandby (CMOS) : 10yuW(Typ.) L-Version 5/iW(Typ.) LL-Version The K M 62 256C L /C L-L is a 2 6 2 ,1 4 4 -b it high-speed

km62256alg

Contextual Info: SAMSUNG ELECTRONICS INC _ 4 SE I> T ^ b Ml Mg D D lD 7 fl fl ÜHSNGK CMOS SRAM KM62256ÄLPI/KM62256ALGI : - : 3 2 K X 8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range: - 4 0 to 8 5 °C

Contextual Info: SAMSUNG ELECTRONICS INC bME D • VSbMlME QDlB^Tb 733 KM62256BL-V CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 ~ S.5V • Fast Access Time: 3V Operation: 240ns Max. 5V Operation: 120ns (Max.)

KM62256CLP-7

Contextual Info: KM62256C CMOS SRAM ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 um CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CMOS process technology. The family

KM62256BLG

Abstract: KM62256BLP KM62256BL-10 KM62256BL-L
Contextual Info: CMOS SRAM KM62256BÜKM62256BL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns Max. • Low Power Dissipation Standby (CMOS): lO^W (Typ.) L-Version 5/iW (Typ.) LL-Version Operating : 35mW (Typ.)

km62256clg-7

Abstract: 62256CL-L
Contextual Info: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CM O S process technology. The family

KM62256CLP-7L

Abstract: km62256clg-7 km62256clg-7l
Contextual Info: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • . The KM62256C fam ily is fabricated by SAMSUNG'S advanced CMOS process technology. The fam ily supports various operating temperature ranges and has various package types for user

7u23

Contextual Info: CMOS SRAM KM62256CLI-LV 32Kx8Bit Extended Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40°C to 85°C • Extended Operating Voltage : 3.0-5.5V • Fast Access Time - 3.3V Operation : 100ns Max.

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

28-TSOP1

Contextual Info: KM62256CL/CL-L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 55,70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 10pW(Typ.) L-Version 5/jW(Typ.) LL-Version Operating : 35mW/1 MHz(Max.) • Single 5 V ± 10% power supply

TSOP 86 Package

Abstract: KM62256C KM62256CL KM62256CLE KM62256CLI KM62256CLI-L KM62256CL-L ci 45116
Contextual Info: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM62256C family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges

KM62256C

Abstract: km62256 CCTG
Contextual Info: KM62256C Ll/C LI - L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range i -40 to 85°C • Fast Access Time : 70,100ns Max. • Low Power Dissipation Standby (CMOS) : 275,«W(Max.) Operating : 110mW(Max.)

KM622568

Abstract: KM62256B
Contextual Info: KM62256BL/KM62256BL-L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 70, 85, 100, 120ns Max. • Low Pow er D issipatio n S tandby (CMOS): 10/xW (Typ.) L-Version 5/iW (Typ.) LL-Version O perating : 35m W /1M H z (Max.)

KM62256DL-L

Abstract: KM62256D KM62256DLP-7 package tsop1 KM62256DLI-L KM62256DLI
Contextual Info: KM62256D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Initial draft May 18, 1997 Design target 0.1 First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA

KM62256BUKM62256BL-L

Abstract: KM62256BLG KM62256BL KM62256BLP
Contextual Info: CMOS SRAM KM62256BUKM62256BL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns Max. • Low Power Dissipation Standby (CMOS): 10MW (Typ.) L-Version 5/iW (Typ.) LL-Version Operating : 35mW/1MHz (Max.)

package tsop1 28

Abstract: KM62256DL-L 62256D
Contextual Info: KM62256D Family CMOS SRAM Document Title 32Kx8 bit Low Pow er CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Initial drall May 18, 1997 Design target 0.1 First revision -KM62256DL/DLI Isbi = 1 0 0 ^ 50pA KM62256DL-L Issi = 2 0 ^ 10pA

Contextual Info: Preliminary CMOS SRAM KM62256CLE-LU 32Kx8 Bit Extended Voltage & Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage : 2.7-5.5V • Extended Temperature Range : -25 to 85°C • Fast Access Time - 3.0V Operation : 120ns Max.

62256B

Abstract: ic 62256 62256 KM62256 sram 62256
Contextual Info: KM62256BLPI/BLGI CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION T h e K M 6 2 2 5 6 B L P I/B L G I is a 2 6 2 ,1 4 4 -b it h ig h -s p e e d • In du s tria l T e m p e ra tu re Range: - 40 to 8 5 °C • Fast A cc e s s Tim e: 70, 100ns M ax.

KM62256DLG-7L

Abstract: km62256dlp KM62256DLG
Contextual Info: PRELIM INARY KM62256D Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• - The KM62256D family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types