TA96 Search Results

DF378F

Abstract: DF103B HRP2540 NR231A single phase full controlled rectifier component list
Contextual Info: HRP2540 December 2001 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device was designed for use as the output rectifier in the three

Contextual Info: HRP2540 S em iconductor April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device

NR231A

Abstract: DF378F DF103B single phase full controlled rectifier component list HRP2540
Contextual Info: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device

IRF620 application

Abstract: TA9600 IRF620 TB334 transistor irf620
Contextual Info: IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

DF103B

Abstract: DF378F NR231A alternator rectifier rectifier three phase 40a HRP2540 single phase half controlled rectifier
Contextual Info: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device

DF378F

Abstract: DF103B HRP2540 NR231A
Contextual Info: HRP2540 April 1995 File Number 2942.1 Power Rectifier/Power Surge Suppressor Features The HRP2540 TA9673 is a high forward current, high reverse energy controlled avalanche power rectifier. It uses an ion-implanted planar epitaxial construction. This device

Tektronix 2245a

Abstract: 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley
Contextual Info: um A pplication Note 47 August 1991 TECHNOLOGY High Speed Amplifier Techniques A Designer's Companion for W ideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note

DS96173

Abstract: DS96175 DS96176 RS-422A DS96178
Contextual Info: NATL SEMICOND {MEMORY} IDE D | b 5 □ 112 b Q G b E 4 L cî 3 | O to CO T -7 5 -4 5 -0 5 National Semiconductor 0> CO 1= > <o o> •Nj DS96173 / ¡x A 96173/D S 96175/ tA96175 RS-485/RS-422 Quad Differential Line Receivers General Description Features The DS96173/jiA96173 and DS96175/ iiA96175 are high

f25n06l

Abstract: F25N06 RFP2506L RFP25N06L an7254 TA9638
Contextual Info: Logic-Level Power MOSFETs RFP25N06L File Number 2044 N-Cnannel Logic Level Power Field-Effect Transistors L2FET 25 A, 50 V - 60 V rDs(on) = 0.085 O Features: N-CHANNEL ENHANCEMENT MODE • Design optim ized fo r 5 volt gate drive ■ Can be driven directly from Q-MOS,

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

MA96177

Abstract: uA96177 A96177 RS-422A A96176 41sv
Contextual Info: /uA9 6 1 7 7 • juA9 6 1 7 8 F A IR C H IL D Differential Bus Repeaters A Schlum berger C om pany Linear Division Interface Products Description Connection Diagram 8-Lead DIP Top View The (¿A96177 and fiA 9 6 1 78 Differential Bus Repeaters are m onolithic integrated devices each designed for one-way

Contextual Info: w vys S IRFF220, IRFF221, IRFF222, IRFF223 S e m ico n d ucto r y y 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channei Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: ASSESS? RURG3010CC, RURG3015CC, RURG3020CC Aprii 1995 30A, 100V - 200V Ultrafast Dual Diodes Features Package • Ultrafast with Soft Recovery . <45ns • Operating Temperature. . . . +175°C • Reverse Voltage Up to . . ,200V JEDEC STYLE TO-247 ANODE 1

Contextual Info: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

DF378F

Abstract: DF103B NR231A rectifier three phase 40a alternator exploded view power circuit of three phase control rectifier HRP2540 washer lock Transient Voltage Suppression Devices, Harris
Contextual Info: HRP2540 S E M I C O N D U C T O R Power Rectifier/Power Surge Suppressor April 1995 Features Package • Low Forward Voltage Drop 1.1V Max at 100A JEDEC TO-220AB A • High Reverse Energy Capability K A • Controlled Maximum Avalanche Voltage (40V Max at 40A)

Contextual Info: IRF620 Semiconductor D ata S h eet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET 1577.3 Features • 5.0A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

ta66

Abstract: uA733 an47fa Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592
Contextual Info: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.

ifr220

Abstract: IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220
Contextual Info: IRFR220, IRFR221, IRFR222, IRFU220, IR FU221, IRFU222 H A R R IS SEMICONDUCTOR 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate

SN75100

Abstract: SN75100L CT070
Contextual Info: SYSTEMS INTERFACE CIRCUITS TYPE SN75100L DUAL DIFFERENTIAL LINE RECEIVER S E R IE S 75 L IN E R E C E IV E R featuring High Input Impedance Fast Switching Speed Good Small-Signal Sensitivity T T L and D T L Compatible Outputs W ire-OR Output Capability description

IRFF220

Abstract: TA9600 TB334
Contextual Info: IRFF220 Data Sheet January 2002 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

transistor irf620

Contextual Info: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFF220 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF620

Abstract: IRF621 TB334 IRF620 HARRIS IFR622 IFR623 IRF622 IRF623 TA9600 IRF623 harris
Contextual Info: IRF620, IRF621, IRF622, IRF623 S E M I C O N D U C T O R 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

ifr220

Abstract: IFU220 JEDEC TO-251AA IRFR220 IRFU220 TA9600 TB334
Contextual Info: IRFR220, IRFU220 Data Sheet 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode