4FLS5452 Search Results

Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM *T RMS 't (AV) 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 100 200 400 600 800 1000

18CPQ100

Abstract: 50HQ050 18CPQ030 18CPQ040 18CPQ050 18CPQ060 18CPQ090 30CPQ030 30CPQ040 30CPQ050
Contextual Info: INTERNATIONAL RECTIFIER H E Schottky Rectifiers | 4flS5452 0010021 0 | -f-o'S-CL I 18 TO 60 AM PS Part Number ' f AV @ TC VRWM m (A) (°C) VFM 'h h ® T j = 125°C & •f m Rated VRW H (A) Max. T j (mA) <°C) Case Style T 0 -2 4 7 A A 18CPQ030 18CPQ040

NI00

Contextual Info: • 4flS5452 001bl4fl 2b^ ■ INR Insulated Gate Bipolar Transistor other Products From IR r INTERNATIONAL RECTIFIER bSE D Fast-Speed IGBT Modules Part Num ber B V C ES Collector to Em itter Breakdown Voltage V IR G T I0 6 5 F 0 6 IR G T I1 2 0 F 0 6 IR G T I1 6 5 F 0 6

25RIA120

Abstract: 16RIA80 50RIA120 T0-208AA 10RIA10 10RIA60 10RIA100 10RIA120 10RIA20 10RIA40
Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 TC 100 200 400 600 800 1000 1200 25 50

design of rectifier circuit of bridge

Abstract: IRCZ34 IRFZ34 international
Contextual Info: HE 0 I 4flS5452 0000^74 2 | I NTERNATIONAL RECTIFIER Preliminary Data Sheet No. PD-5.018A INTERNATIONAL RECTIFIER - I«R T -39-27 HEXFET Power Module CPX300-Series 3-Phase Bridges

1N5401

Abstract: 1N5401+equivalent
Contextual Info: INTERNATIONAL RECTIFIER 4855452 SS IN TER N ATIO N A L DE|4flS5452 O O C m Q ì 55C R E C T IF IE R 4 | 04909 D Data Sheet No. PD-2.083 àt-tsr INTERNATIONAL RECTIFIER IÖR 1N54Ü1 SERIES 3 Amp Medium Power Silicon Rectifier Diodes Major Ratings and Characteristics

IG8T

Abstract: DIODE 65A IRGKI065F06 82FL
Contextual Info: International B Rectifier PD-9.965C IRGKI065F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses

FD9515

Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
Contextual Info: H E INTERNATIONAL I 4055452 QQOÛEba I 1 Data Sheet No. FD-9.515A T-35-25 RECTIFIER IOR INTERNATIONAL RECTIFIER AVALANCHE AND dv/dt RATED IRFROSO IRFROSS IRFUOSO IRFUOSS HEXFET TRANSISTORS N-CHANNEL Product Summary 50 Volt, 0.10 Ohm HEXFET T he H E X F E T technology is the key to International

Contextual Info: IN T E R N ATIONAL REC TIFIER IO R in t e r n a t io n a l ' D e | 4ÖSS452 □ OOb'ifl'ì 5 f 73 Data Sheet No. PD-3.150 r e c t if ie r S34DF & S34DFH SERIES 400-200 VOLTS RANGE STANDARD TURN-OFF TIME 8 / j s 440 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs

Rectifier GE 019-4

Contextual Info: I . I." IT W I • 6 l^ 3 t lO r i3 l 4S S54 52 QOlbSlb BflS ■ INTERNATIONAL R E C T I F I E R W Rectifier INR bSE D s e r ie s m t-k THREE PHASE CONTROLLED BRIDGE Power Modules 55A 90A 110A Features ■ Package fully compatible with the Industry standard

Contextual Info: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: PD 9.1651 B International IQ R Rectifier F B 1 8 0 S A 10 HEXFET Power MOSFET • • • • • • • • Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance

Contextual Info: Bulletin 125175/B International S Rectifier ST223S SERIES Stud Version INVERTER GRADE THYRISTORS Features • All diffused design ■ Center amplifying gate ■ Guaranteed high dv/dt ■ Guaranteed high di/dt ■ High surge current capability ■ Low thermal impedance

Contextual Info: PD-2.460 International ^R ectifier HFA70NK60C Ultrafast, Soft Recovëry Diode HEXFRED" BASE COMM 3N CATHODE Features VR = 600V c5 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 520nC 2 ¡3

E1017

Abstract: R38BF14A 1000 v fast recovery rectifier diodes
Contextual Info: 02E D £ HÖSS4S2 DDGfi03fl 48 b 02E 08038 ¿>¿3 - - 2 3 Data Sheet No. PD-2.127 INTERNATIONAL RECTIFIER IO R D “INTERNATIONAL RECTIh ILK o R38BF S E R IE S 1600-1400 VOLTS RANGE R EV ER S E R ECO V ER Y TIM E 1.5*/s 620 AMP AVG H O CKEY PUK S O FT FAST R ECO VER Y R EC T IFIER DIODES

HB-S Rectifier

Abstract: KA2 v0 diode b3l 15a negetive diode
Contextual Info: I N T E R N A TI ON AL RECTIFIER lIO R lin t e r n a t io n a l "t Ì Dlf 4A554S2 □□□?□□? i T “ 3-5 “ /? Data Sheet No. PD-3.155 r e c t if ie r S23AF & S23AFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 fjs 430 AMP RMS, RING AMPLIFYING GATE

t 3.15A 250V CQ

Abstract: 81RDT120M 81RDT-M rgte 81RDT100M international rectifier GTO 84RDT-M INTERNATIONAL RECTIFIER 81RDT 84RDT120M 2103S
Contextual Info: INTERNATIONAL RECTIFIER ^ 73 Ï F| 4055455 OGDbSt.3 4 ^ T r / 7 - Data S h e e t N o. PD -3.077B INTERNATIONAL RECTIFIER IOR 8 1 R D T -M A N D 8 4 R D T -M S E R IE S 3 5 0 A It g Q C3ate Turn-Off P ressu re Assem bled S C R s Major Ratings and Characteristics

THYRISTOR BST N 45 B 90

Abstract: thyristor bst m 45 90 Thyristor bst 2 HALF WAVE 45 E 57 20-C1V thyristor YS 160 004 11111I D226 diode irkt91-18 L9500 thyristor bt 3A
Contextual Info: i * fl5 5 4 5 2 International ü ^jRectifier □ O lbb'JO GOfl IIN R s e r ie s ir k . 26 , .41, .56 , .71, .91 HIGH VOLTAGE THYRISTOR/ DIODE ADD-A-pak Power Modules and THYRISTOR/ THYRISTOR Features IN T E R N A T IO N A L R E C T IF IE R • ■ E le c tric a lly iso lated b a s e plate

Contextual Info: INTERNATIONAL RECTIFIER 2bE D • T~ M A S S E S 0010751 3 ■ X C 3 R | IN T E R N A T IO N A L . R E C T I F IE R J 1 R23D SERIES 2600-2000 VOLTS RANGE 320 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS J x PA RT \ t NUMBS* : : l

Contextual Info: PD-9.1358D International IQR Rectifier IRLZ24NS/L HEXFET Power M O S F E T • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRLZ24NS • Low-profilethrough-hole(IRLZ24NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

Contextual Info: International IOR Rectifier Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

I1092

Contextual Info: Provisional Data Sheet No. PD 9.1289B International IOR Rectifier HEXFET PO W E R M O S F E T IR FY240C M N-CHANNEL Product Summary 200Volt, 0.18Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M OSFET transistors. The effi­

c372 transistor

Abstract: transistor C369 transistor C372
Contextual Info: International lü Rectifier PD -9.1141 IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ps @125°C, VGE= 15V Switching-loss rating includes all "tail" losses

Contextual Info: P D -9.1584 International IG R Rectifier IRG4PC40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 k H z , and Short