4ASS452 Search Results

IRFP460

Abstract: IRFP460 IR irfp460 mosfet
Contextual Info: International mg Rectifier 4ASS452 GD155M4 35T H I N R HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • • PD-9.512B IRFP460 Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

ma 8920

Abstract: 750PEF10 750PEF40 NI-11
Contextual Info: INTERNATIONAL RECTIFIER / qcc / ct 4855452 INTERNATIONAL RECTIFIER in D e | 4ASS452 000473M b Data Sheet No. PD-3.065 49C 04734 D INTERNATIONAL RECTIFIER I R 1180A RMS Fast Turn-Off Hockey Puk Thyristors 750PEF SERIES Description Th e 7 5 0 P E F series o f fast tu r n -o ff thyristors use centre

9956b

Abstract: c836 irgti140u06 diode c832 c833 *9956b 956B 4ASS452 mosfet c836
Contextual Info: International S Rectifier PD-9.956B IRGTI140U06 “HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT V CE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

irf710

Contextual Info: International S Rectifier HEXFET Power MOSFET MS5S45E 0 0 1 4 7 5 2 3T0 INR PD-9.327J IRF710 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D ?5E VDSS= 400V ^DS on = 3 -6 Q

C-491

Contextual Info: International H R ectifier PD959 IRGKIN025M12 "CHOPPER LOW SIDE SWITCH IGBTINT-A-PAK |_ow conduction loss IGBT VŒ = 1200V lc = 25A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail11 losses •Short circuit rated Vce ON <2.7V

Contextual Info: PD-2.474 bïtemational [torjRectifier HFA75MC40C Ultrafast, Soft Recovéry Diode HEXFRED Features V r = 400V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.3V Qrr * = 500nC ANODE COMMON ANODE

transistor c905

Contextual Info: P D - 9.1107 International Rectifier IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V c es = 6 0 0 V Short circuit rated -1 Ops @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

IR6001

Contextual Info: Preliminary Data Sheet 6.038 INTERNATIONAL RECTIFIER IO R IR6001 INTELLIGENT HIGH-SIDE □MOS POWER SWITCH 60V Intelligent Power Switch Rating Summary General Description The IR6001 is a monolithic, fully self protected high side D M O S power switch. Designed primarily for solenoid

Contextual Info: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve

FR07* diode

Abstract: FR07
Contextual Info: j pj j-0 f flQfjonO I Provisional Data Sheet No. PD-9.418A IOR Rectifier HEXFET POWER MOSFET IRFN450 N - CHA N N E L Product Summary Part Number I 500 Volt, 0.415ft HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi­

Contextual Info: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e

Contextual Info: PD-2.460 International ^R ectifier HFA70NK60C Ultrafast, Soft Recovëry Diode HEXFRED" BASE COMM 3N CATHODE Features VR = 600V c5 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 520nC 2 ¡3

c918

Abstract: C918 diode C913
Contextual Info: International e?rRectifier P D -9.1125A IRGBC20KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features • • • • Short circuit rated -1 Ops @ 125°C, VGE = 15V Switching-ioss rating includes all "tail" losses

Contextual Info: I i .•_ I PRELIMINARY International I R Rectifier P D 9 .1 3 8 5 IRF5305 HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Vdss = -55 V

Contextual Info: TOR INTERNATIONAL 4Ö554S2 OGlOTCm 2 RECTIFIER -T-û I-33 154 R52K SERIES 5000-4400 VOLTS RANGE 1320 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER OIODES VOLTAGE i RATINGS t i : PART : NUMBER t j : : * I S j VRRM. Vfl - VJ Hm « ra p . paak r a v i r u and d ir a o t v o lta g a

Contextual Info: International Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve Vces = 500V

ST203C

Contextual Info: Bulletin 125176/A International S Rectifier ST203C.C s e r ie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • M e ta l c a s e w ith c e ra m ic in s u la to r ■ In te rn a tio n a l s ta n d a rd c a s e T 0 -2 0 0 A B A -P U K ■ A ll d iffu s e d d e s ig n

Contextual Info: PD-9.1069 International ioR R ectifier IRF840LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated

IRFI840GLC

Contextual Info: PD-9.1208 International i » r Rectifier IRFI840GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

t 3.15A 250V CQ

Abstract: 81RDT120M 81RDT-M rgte 81RDT100M international rectifier GTO 84RDT-M INTERNATIONAL RECTIFIER 81RDT 84RDT120M 2103S
Contextual Info: INTERNATIONAL RECTIFIER ^ 73 Ï F| 4055455 OGDbSt.3 4 ^ T r / 7 - Data S h e e t N o. PD -3.077B INTERNATIONAL RECTIFIER IOR 8 1 R D T -M A N D 8 4 R D T -M S E R IE S 3 5 0 A It g Q C3ate Turn-Off P ressu re Assem bled S C R s Major Ratings and Characteristics

WE VQE 11 E

Abstract: DIODE 65A IRGT1065F06 FF1000
Contextual Info: International Ö R edffler PD-9.957B IRGTI065F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design »Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses VCE = 600V lc = 65A

Contextual Info: International S Rectifier PD - 2.271 A 85CNQ015 SCHOTTKY RECTIFIER 80Amp Major Ratings and Characteristics Characteristics Desciption/Features The 85CNQ015 center tap Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology

TRANSISTOR C483

Abstract: IRGPH50MD2
Contextual Info: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses