D02D3 Search Results

LRS13061

Contextual Info: SHARP LRS I 3 0 6 1 Contents Part 1 Product Overview 1. D escription . 2 2. Pin C onfiguration .

Contextual Info: International Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve Vces = 500V

Contextual Info: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus­ tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to

abb ac drive circuit diagram

Contextual Info: DATASHEET PM PMC-971154 ISSUE 5 p r e li m in a r y STANDARD PRODUCT | ^ I \ # I • PMC-Sierra, Inc. PM7324 sajni-a t l a s S/UNI-A TM LA YER SOLUTION PM7324 S/UNI-ATLAS SATURN USER NETWORK INTERFACE ATM LAYER SOLUTION DATASHEET PRELIMINARY ISSUE 5: JAN 1999

Contextual Info: O K I Semiconductor MSM5 1 V18165 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V18165A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V18165A is

qml-38535

Abstract: CDFP2-F14 CQCC1-N20 54ACT11
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED ( REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 8 9 10 11 12 PREPA R ED BY PMIC N/A Joseph A. Kerby STANDARD M ICRO CIRC UIT DRAW ING THIS DRAW IN G IS A V A ILA B LE FO R USE BY ALL DEP AR TM E N TS

Contextual Info: CMOS PARALLEL FIFO 64 x 4-BIT AND 64 x 5-BIT FEATURES: • • • • First-In/First-Out Dual-Port memory 64 x 4 organization IDT72401/03 64 x 5 organization (IDT72402/04) IDT72401 /02 pin arid functionally compatible with M M I67401/02 RAM-based FIFO with low fall-through time

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Contextual Info: O K I Semiconductor MSM51V18160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V18160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V18160A is

KM416V1204A

Abstract: C1004A KM416V1004A km416c1204a
Contextual Info: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply

msm5116165a

Contextual Info: O K I Semiconductor MSM5 1 16165 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116165A achieves high integration, high-speed operation, and low-power

RC144DPG-D

Abstract: txal v150la10a RC144DPG DD203 1750 Hz TONE dEcoder DIODE 1N4148 LL-34 S0323 RC96DPG RC96DPG-D
Contextual Info: RC144DPG RC144DPG 3.3V, Low Power, V.32 bis Data/V.17 Fax/Voice Modem Data Pump Rockwell INTRODUCTION FEATURES The Rockwell RC144DPG modem family consists of high speed, 3.3V, modem data pumps that support data rates up to 14400 bps, fax operation up to 14400 bps, and

C567

Abstract: IRGTDN100M12 igbt 1000v 100a 10 khz 100A 1000V mosfet
Contextual Info: International [^Rectifier IRGTDN100M12 "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 1 0 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated Vce ON <2.5V t sc > 1 0 |JS

6AL3

Abstract: SHARP LRS LRS13061 WT5 marking code LRS1306
Contextual Info: SHARP LRS I 3 0 6 1 Contents Part 1 Product Overview 1. Description . 2 2. Pin Configuration .