S0323 Search Results

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static R AM • Equal access and cycle times — Military: 1 5 /1 7 /2 0 /2 5 n s — Com m ercial: 1 2 /1 5 /1 7/20n s

6116 CMOS RAM

Abstract: 6116 static RAM chip 71V428 IDT71V428 IDT71V428L IDT71V428S
Contextual Info: IDT71V428S IDT71V428L 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns

SO32-3

Abstract: IDT71024 IDT71024S70 S0323
Contextual Info: IDT71024S70 CMOS STATIC RAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 CMOS static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible

s0324

Contextual Info: dt) 3.3V CMOS STATIC RAM 1 MEG 128K x 8-BIT) REVOLUTIONARY PINOUT PRELIMINARY IDT71V124 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for reduced noise.

y 4m

Abstract: 641BL
Contextual Info: CM O S STATIC RAM 1 MEG 128K x 8-BIT IDT71024 FEATURES: DESCRIPTION: • 128K x 8 a d v a n ce d h ig h -s p e e d C M O S s ta tic R AM T h e ID T 7 1 0 2 4 is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d sta tic R AM o rg a n iz e d a s 128K x 8. It is fa b ric a te d u sing ID T ’s highp e rfo rm a n c e , h ig h -re lia b ility C M O S te c h n o lo g y. T h is sta teo f-th e -a rt te c h n o lo g y , c o m b in e d w ith in n o va tive c irc u it d esign

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71V428S IDT71V428L FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed C M O S Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

CHN 920

Abstract: 71024S15 chn 830
Contextual Info: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options

Contextual Info: ADS61B23 w w w .t i.c om SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with

IDT71128

Contextual Info: CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71128 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT ADVANCE INFORMATION IDT71V428 Integrated Device Technology, inc. FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

S0323

Contextual Info: Integrated Device Technology, Inc. VERY LOW POWER 3.3V CMOS FAST SRAM 1 MEG 128K x 8-BIT FEATURES: • 128K x 8 advanced high-speed CMOS Static RAM • Equal access and cycle times — Commercial: 20/25ns • True 3.3V design, not a re-characterized 5V device

Contextual Info: CMOS STATIC RAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71024 Integrated D evice T ech nology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • Equal access and cycle tim es — M ilitary: 20/25ns — C om m ercial: 15 /17ns

ADS612X

Abstract: ADS61B23 ADS61B23IRHBT QFN-32 ADS61XX
Contextual Info: ADS61B23 www.ti.com SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with

Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for

S0323

Contextual Info: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times

S0323

Abstract: IDT71024S70 K 3568
Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT IDT71024S70 FEATURES: DESCRIPTION: • 1 2 8 K x 8 CM O S static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible

Contextual Info: CMOS STATIC RAM 1 MEG 128KX 8-BIT IDT71024 Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM OS Static RAM • Equal access and cycle tim es — Military: 17/20/25ns — Com m ercial: 15/17/20ns _ • Two Chip Selects plus one O utput Enable (OE) pin

IDT71124

Abstract: 71124s12
Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times

IDT71128

Contextual Info: CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71128 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinput (center power/GND) for reduced noise. • Equal access and cycle times

Contextual Info: ADS61B23 www.ti.com SLAS582 – FEBRUARY 2008 12-BIT, 80-MSPS ADC WITH BUFFERED ANALOG INPUTS FEATURES 1 • • • • • • • • • • • • • • • • Maximum Sample Rate: 80 MSPS 12-bit Resolution with No Missing Codes Buffered Analog Inputs with

Contextual Info: 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V428S IDT71V428L OBSOLETE PART Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns

Contextual Info: PRELIMINARY IDT71V128 3.3V CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise. • Equal access and cycle times

Contextual Info: CMOS STATIC RAM 1 MEG 128Kx 8-BIT IDT71024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 ad v a n c e d h ig h -s p e e d C M O S s ta tic RAM • E qual a cc e s s and cycle tim e s — M ilitary: 1 5 /1 7/2 0/25 ns — C o m m e rc ia l: 1 2 /1 5 /1 7/2 0ns