2N692 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL ~7 Ë ^ B 'ilñ S 'íD 72C 01936 SEMICONDUCTOR General Semiconductor Industries, Inc• D Ë ]| □ 0 D l c1 3 t i 7 7^ 3 2 -4 5 - _ NPN TRANSISTOR C H IP g q U H H E D COM PANY “ T y p ic a l D evice Types: 2 N 6 92 0, 2N6921

Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM *T RMS 't (AV) 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 100 200 400 600 800 1000

scr C35

Abstract: 2N683 2N690 2N681-2N692 2N688 2n692 2N681 2N682 FREEPORT 2N684
Contextual Info: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes / 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control

2n6812

Abstract: prx scr navi 600 2nb12 marking asa 2N685 B11-1960 2n687 PRX 2N681 2N681-2N692
Contextual Info: POlilEREX INC B'JE D • 72m b21 00053Mb 5 M P R X T K M iE R E X 2N681-2N692 Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 P tlS S Q C O fltfO l

2N692

Abstract: TO-208AA
Contextual Info: 2N692 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N692 Availability Online Store Diodes

sem 3040

Abstract: sem 3040 ic tvs diode stacking 2N6927 2N6922 2n6927a 2N6926 sem 3040 ic all data
Contextual Info: GENERAL SE MI CON DUCTOR 3918590 GENERAL TS DE iBTlflSTO DOPElbO 95D SEMICONDUCTOR ^ General ^ ^ Sem iconductor ^ • Industries, Ine SQURRE Ti COMPANY • 02160 D 2N6922, 2N6923, 2N6926, 2N6927, 2N6922A 2N6923A 2N6926A 2N6927A 7 -J 3 -/3 HIGH POWER NPN iw tfch

50R1A160

Abstract: 50RIA120M 50RIA80 16RIA60 50RIA20 50R1A140 50RIA120 16ria80 50RIA10 om 355
Contextual Info: Thyristors international i I ] Rectifier Phase Control Type 25-80 Am ps R M S Part Number 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 Vr r m Vd RM V 100 200 400 600

Sprague extralytic

Abstract: 2N6925A 6924a 2N6925 2N6924 2N6924A IRF9130 VP1206N1 tvs diode stacking Reliability, Inc VP12
Contextual Info: SßUÄRE D CO/ 3918590 GENERAL GENERAL ÖSESSDfi SEMICONDUCTOR General 3^* Semiconductor ^ « Industries, Inc. HIGH POWER NPN DDD21bb 95D 02166 2N6924 2N6924A 2N6925 2N6925A « Q U H R B T I COMPANY Switch P/US !/!TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness

DC4066

Abstract: MIL-PRF-19500 544 electrical 2N5206 2N683 2N692A 2N682 2N685 2N686 2N692 2N685 JANTX
Contextual Info: INCH-POUND MIL-PRF-19500/108K 4 December 2006 SUPERSEDING MIL-PRF-19500/108J 14 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS CONTROLLED RECTIFIERS , SILICON, TYPES 2N682, 2N683, 2N685 THROUGH 2N692, 2N692A, 2N5206, JAN AND JANTX

2N681

Abstract: 2N690
Contextual Info: 2N681 thru i• " S O L I D 2N692 STATE INC. 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com ?G A o— - * r — o K SILICON CO N TRO LLED R EC T IF IER REVERSE BLO CKIN G TRIO DE TH Y R IST O R S . . designed prim arily for half-wave ac control applications, such

2N681-2N692

Abstract: 2n688 2N685 JANTX rsm ah 16 2N690 2n692 2N684 2N683 2N683 JANTX
Contextual Info: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes 1 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control

2N683

Abstract: 2N682 TO48 package 2N685 2N692 2N690 JAN 2N690 2n688 2N685 JANTX T4-LDS-0249
Contextual Info: 2N682, 2N683, and 2N685 – 2N692 Available on commercial versions Qualified Levels: JAN and JANTX PNPN Silicon, Reverse-Blocking, Power Triode Thyristors Qualified per MIL-PRF-19500/108 DESCRIPTION This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability

BTA12-700SW

Abstract: TLC226B BTA40-700B BTA12-700BW TLC336B BTB06-700BW BTB06-700SW btb04 600c BTA06-400GP BTA26-700B
Contextual Info: ALPHANUMERICAL INDEX Type Number AVS08-CB AVS08-CBI AVS10CB AVS10CBI AVS12CB 2N682 2N683 2N685 2N688 2N690 2N692 2N1771 2N1772 2N1774 2N1777 2N2619 2N3650 2N3651 2N3653 2N3655 2N3656 2N3658 2N5204 2N5205 2N5206 2N5207 BTA04-400A BTA04-400D BTA04-400S BTA04-400T

Sprague extralytic

Abstract: 2N6922 2N6923 2N6927 1RF9533 ALI 3101 C 2N6922A 2N6923A 2N6926 2N6926A
Contextual Info: GENERAL SE MI CO ND UCT OR 3918590 TS GENERAL DE iBTlflSTO 95D SEMI CONDUCTOR ^ General ^ ^ Semiconductor ^ Industries, Ine• SQ UARE Ti C O M P A N Y DDDElhD □ 02160 D 2N6922, 2N6923, 2N6926, 2N6927, 2N6922A 2N6923A 2N6926A 2N6927A 7-J3-/3 Swtfth HIGH POWER NPN

2N6925

Abstract: TO3 package 2n6924
Contextual Info: O General Semiconductor Industries, Inc. * NPN TRANSISTOR CHIP " Typical Device Types: 2N6924, 2N6925 37 " 35 AMP Bonding Pad Areas Fast Switching Base 1 135x28 mils Emitter (1)49 x 30 mils Typical Switching Front Metallization: Aluminum Back Metallization:

Contextual Info: GENERAL SEMICONDUCTOR • 3918590 G EN ER A L "75 ^ 72C SEMI CONDUCTOR General Semiconductor Industries, Inc • j> T | 0001^37 0 1 .9 3 7 T |~ 7^ 3 3 - ¿ > 3 ~ NPN T R A N S IS T O R CH IP « 07 » S q U R R E □ COMPANY Typical Device Types: 2N6924, 2N6925

25RIA120

Abstract: 16RIA80 50RIA120 T0-208AA 10RIA10 10RIA60 10RIA100 10RIA120 10RIA20 10RIA40
Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 TC 100 200 400 600 800 1000 1200 25 50

2N681

Abstract: 2N681A 2N689 2N691 2N692 2N692A
Contextual Info: Data Sheet 2N681.ATHRU 2N692.A cSemciconductor i i i r aCorp. i SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-48 CASE M anufacturers of W orld Class Discrete Semiconductors

2N691

Contextual Info: 2N682, 2N683, 2N685 – 2N692 and 2N5206 Available on commercial versions PNPN SILICON, REVERSE-BLOCKING, POWER TRIODE THYRISTORS Qualified Levels: JAN and JANTX Qualified per MIL-PRF-19500/108 DESCRIPTION This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability

2N682

Abstract: 2N690 2n6822 2n688 2n692
Contextual Info: 2N682 thru 2N692 Silico n Controlled R ectifiers Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.

2N6922

Abstract: 2N6923A
Contextual Info: . ^ , General ^ Semiconductor ^ • Industries, Inc. HIGH POWER NPN fw/fcfi / ^ / / 2N6922, 2N6922A 2N6923, 2N6923A / I/tRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and rugged­ ness for use in high speed switching systems. This unique series also features General

2n6923

Contextual Info: General Semiconductor Industries, Inc. O NPN T R A N S IS T O R C H IP ” Typical Device Types: GSRU15040, GSRU20040,2N6922, 2N6923 31 " 20 AMP Ultra Fast Switching Bonding Pad Areas Bas« 1 106 x 20 mils Emitter (4) 37.5 X 23 mils Front Metallization: Aluminum

D7ZS

Abstract: 2N681 2N681-2N692 2N692 2N689 2N682 2N683 2N684 2N687 2N688
Contextual Info: 6 E SOLI D 3875081 Üi STATE G E SOLID STATE ÖE~| 3ß7SDfll 0D17tt.t 3 01E 17666 Silicon Controlled ¡*3 7* 2N681-2N692 File Number 96 TERMINAL DESIGNATIONS 25-A Silicon Controlled Rectifiers