Sprague extralytic
Abstract: 2N6925A 6924a 2N6925 2N6924 2N6924A IRF9130 VP1206N1 tvs diode stacking Reliability, Inc VP12
Contextual Info: SßUÄRE D CO/ 3918590 GENERAL GENERAL ÖSESSDfi SEMICONDUCTOR General 3^* Semiconductor ^ « Industries, Inc. HIGH POWER NPN DDD21bb 95D 02166 2N6924 2N6924A 2N6925 2N6925A « Q U H R B T I COMPANY Switch P/US !/!TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness
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2n69242n6924a2n69252n6925a+70to-95o-1942sprague extralytic6924airf9130vp1206n1tvs diode stackingreliability, inc vp12
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Sprague extralytic
Abstract: 2N6925A 2N6924A DIODE ED 11 2n6924
Contextual Info: 2N6924 2N6924A 2N6925 2N6925A ^ General ^ ^ Semiconductor ^ - Industries, Inc. Switch HIGH POWER NPN TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness for use in high speed switching systems. This unique series also features General Semi
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2n69242n6924a2n69252n6925a+4sustainin81852b1sprague extralyticdiode ed 11
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2N7058
Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20
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vnl005ao-204aa/to-3vnm006avnm005a+122n17172n1890o-205ad/to-392n7058ytf8302n70572n769ytf8402n1565vnp006a2sa10912n7066
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TIC125
Abstract: 2N6925A ic 921 transistor VCE 1000V 2N6678 2N6921A 2N6923A 2N6924A MJ16018 SFT6925A
Contextual Info: *— t t u ' - -— SFT5925A NPN HIGH VOLTAGE HIGH SPEED POUJER TRANSISTOR 60 AMPS, 1000V 5TYLE CASE TO —3 WI TH JEDEC .060 PINS ► ► ► ► ► R A X SSDI 14849 F I R E S T O N E BLVD. LA MIRADA, CA. 9 0 6 3 8 FAX 213 9 2 1 - 9 6 6 0
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sft5925a100khz2n66782n6921a+92n6923a2n6924a2n6925amj1601860ampssft6925atic125ic 921transistor vce 1000v
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BUV-481
Abstract: BUV481 2n6571 BUS14 KSG31203 2SC2761 sanken str 450 bur21 ksg3
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 970 Manufacturer Ie Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max (8) (8) 500n 500n .70u .70u .70u 1.0u 1.0u 1.0u 2.0 1.0u 1.0u .80u
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bur24bus14buv481oisc-42+9ot-93o-247varbuv-4812n6571ksg312032sc2761sanken str 450bur21ksg3
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GSTU4040
Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0
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2n43002n48632n48642n5148+82n34182n34192n34202n34212n35062n3507gstu40402n6547 jantx
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2N3729
Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Contextual Info: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6
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Contextual Info: SOLID STATE DEVICES INC 50E D • Ö3bb011 Q 0 0 2 n 0 2 SFT6925A NPSM HIGH VOLTAGE HIGH S P E E D POUJER T R A N S I S T O R 6 0 AMPS, 1000V CASE J E D E C STYL-E " T O — 3 WITH . 0 6 0 P I N S ► ► R A T I M Collector-Base Emitter-Base Collector FAX
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3bb011sft6925a100khz2n6921a+62n6923a2n6924a2n6925a60amps20adc30adc
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