2N6925 Search Results

Sprague extralytic

Abstract: 2N6925A 6924a 2N6925 2N6924 2N6924A IRF9130 VP1206N1 tvs diode stacking Reliability, Inc VP12
Contextual Info: SßUÄRE D CO/ 3918590 GENERAL GENERAL ÖSESSDfi SEMICONDUCTOR General 3^* Semiconductor ^ « Industries, Inc. HIGH POWER NPN DDD21bb 95D 02166 2N6924 2N6924A 2N6925 2N6925A « Q U H R B T I COMPANY Switch P/US !/!TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness

2N6925

Abstract: TO3 package 2n6924
Contextual Info: O General Semiconductor Industries, Inc. * NPN TRANSISTOR CHIP " Typical Device Types: 2N6924, 2N6925 37 " 35 AMP Bonding Pad Areas Fast Switching Base 1 135x28 mils Emitter (1)49 x 30 mils Typical Switching Front Metallization: Aluminum Back Metallization:

Contextual Info: GENERAL SEMICONDUCTOR • 3918590 G EN ER A L "75 ^ 72C SEMI CONDUCTOR General Semiconductor Industries, Inc • j> T | 0001^37 0 1 .9 3 7 T |~ 7^ 3 3 - ¿ > 3 ~ NPN T R A N S IS T O R CH IP « 07 » S q U R R E □ COMPANY Typical Device Types: 2N6924, 2N6925

Sprague extralytic

Abstract: 2N6925A 2N6924A DIODE ED 11 2n6924
Contextual Info: 2N6924 2N6924A 2N6925 2N6925A ^ General ^ ^ Semiconductor ^ - Industries, Inc. Switch HIGH POWER NPN TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness for use in high speed switching systems. This unique series also features General Semi­

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

TIC125

Abstract: 2N6925A ic 921 transistor VCE 1000V 2N6678 2N6921A 2N6923A 2N6924A MJ16018 SFT6925A
Contextual Info: *— t t u ' - -— SFT5925A NPN HIGH VOLTAGE HIGH SPEED POUJER TRANSISTOR 60 AMPS, 1000V 5TYLE CASE TO —3 WI TH JEDEC .060 PINS ► ► ► ► ► R A X SSDI 14849 F I R E S T O N E BLVD. LA MIRADA, CA. 9 0 6 3 8 FAX 213 9 2 1 - 9 6 6 0

BUV-481

Abstract: BUV481 2n6571 BUS14 KSG31203 2SC2761 sanken str 450 bur21 ksg3
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 970 Manufacturer Ie Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max (8) (8) 500n 500n .70u .70u .70u 1.0u 1.0u 1.0u 2.0 1.0u 1.0u .80u

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0

c 3421 transistor

Abstract: GSRU20040 2n6924 gsru200 2N2891
Contextual Info: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .

2N3729

Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Contextual Info: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6

TLP 527

Abstract: IR5065 transistor TIP 350 TLP-531 ST555 2N6676 IR5061 IR5066 ST-550 TLP 535
Contextual Info: kn| I SEnlCONDUCTOR TECHNOLOGY OSE D | fll3bM5fl □ D□ □ B5 *4 M [ 1 ^ * T - 5 S .- 0 / NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS Industry Type Power Dissipation @25 "C watts VCEV (volts) 2N6672 2N6673 2N6674 2N6675 2N6676 2N6672 2N6673

Contextual Info: SOLID STATE DEVICES INC 50E D • Ö3bb011 Q 0 0 2 n 0 2 SFT6925A NPSM HIGH VOLTAGE HIGH S P E E D POUJER T R A N S I S T O R 6 0 AMPS, 1000V CASE J E D E C STYL-E " T O — 3 WITH . 0 6 0 P I N S ► ► R A T I M Collector-Base Emitter-Base Collector FAX

RBSOA

Abstract: transistor crossover
Contextual Info: SWITCHING TRANSISTOR FUNDAMENTALS The advances in the technology of bipolar switching power transistors have resulted in devices which com­ bine high-voltage capability, speed, and ruggedness previously thought impossible to obtain in a single transistor. As an example, General Semiconductor