RBSOA Search Results

IRGPS4067

Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
Contextual Info: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •         Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM 

resistor 2200 ohm

Contextual Info: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM

Contextual Info: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C

NTC 303

Abstract: robot control PS18 SV18
Contextual Info: VDI 130-06P1 VII 130-06P1 VID 130-06P1 VIO 130-06P1 IC25 = 121 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 B3 PS18 X15 L9 VX18 LMN

IC IGBT 20N120

Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1
Contextual Info: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings

80c210

Abstract: robot control
Contextual Info: MWI 150-06 A8 Advanced Technical Information IC25 = 170 A = 600 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 3 4 7 8 11 12 14, 20 IGBTs Features NPT IGBT technology low saturation voltage

Contextual Info: MWI 25-12 A7 MWI 25-12 A7T IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Preliminary Data 1 2 Type: NTC - Option: MWI 25-12 A7 MWI 25-12 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3

25t120

Abstract: PS18 SV18 NTC 279 T 200
Contextual Info: VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 IC25 = 30 A = 1200 V VCES VCE sat typ. = 2.6V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII VDI AC1 VID IK10 JK VIO P9 L9 X15 G10 F1 X18 X16 Pin arangement see outlines

BUD620

Abstract: E2 p SMD Transistor
Contextual Info: Temic BUD620 S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA 100 kHz switching rate

robot control

Abstract: 200-06A8
Contextual Info: MWI 200-06 A8 Advanced Technical Information IC25 = 225 A = 600 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 3 4 7 8 11 12 14, 20 Features IGBTs ● Symbol Conditions VCES TVJ = 25°C to 150°C

IC IGBT 20N120

Abstract: IXDH20N120AU1 ixdh20n120au 20N120
Contextual Info: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW

Contextual Info: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls

Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current)

Contextual Info: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls

Contextual Info: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls

Contextual Info: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls

Contextual Info: n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls

10D120

Abstract: 10D-120 25CC
Contextual Info: F U J I IGBT & FWD 1200 V 10 A 1MB 10D-120 tlU J M H T D S D E Fuji Discrete Package IGBT Outline Drawing • Features > Square RBSOA > Low Saturation Voltage • Less Total Pow er Dissipation • Minim ized Internal Stray Inductance I Applications • High Pow er Switching

P093A

Abstract: STE50DE100
Contextual Info: STE50DE100 1000 V - 50 A - 25 mΩ POWER MODULE PRELIMINARY DATA • ■ ■ ■ ■ ■ HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 KHz SQUARED RBSOA UP TO 1000 V ULTRA LOW CISS DRIVEN BY RG = 56Ω

Contextual Info: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

IRG7PH42UD1M

Abstract: 30A, 600v RECTIFIER DIODE
Contextual Info: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode

IRG7PH46UDPBF

Abstract: 028005
Contextual Info: PD - 97498A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

400uH

Abstract: GB35XF120K
Contextual Info: Bulletin PD - 94570 rev.B 08/03 GB35XF120K IGBT SIXPACK MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: GB50YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 50 A FEATURES • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE on temperature coefficient • Copper baseplate • Low stray inductance design • Speed 8 to 60 kHz