2N6921 Search Results

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL ~7 Ë ^ B 'ilñ S 'íD 72C 01936 SEMICONDUCTOR General Semiconductor Industries, Inc• D Ë ]| □ 0 D l c1 3 t i 7 7^ 3 2 -4 5 - _ NPN TRANSISTOR C H IP g q U H H E D COM PANY “ T y p ic a l D evice Types: 2 N 6 92 0, 2N6921

Sprague extralytic

Abstract: 2N6981A 2N6920 2N6920A 2N6921 2N6921A 2N6980 2N6980A 2N6981 Extralytic 600
Contextual Info: - Sß UARE » CO/ GENERAL ^ 3 9 1 8 5 9 0 GENERAL D • ÔS 2 S S 0 Ô Q0021Sb SEMICONDUCTOR General ^ ^ Semiconductor i^L « Industries, Ine• 95D 02156 ^ HIGH POWER NPN 3 2N6920, 2N6920A 2N6921,2N6921A 2N6980, 2N6980A 2N6981,2N6981A S Q U H H E TÌ COMPANY

Sprague extralytic

Abstract: 2N6920 N6920
Contextual Info: ^ General 5 ^ Semiconductor » Industries, Inc. HIGH POWER NPN 2N6920, 2N6920A 2N6921. 2N6921A Switch P/us'/H TRANSISTORS These NPN s ilic o n tra n sisto rs o ffe r an un precedented com b in a tio n of speed and ru gged­ ness fo r use in high speed s w itc h in g system s. This un iq ue series also features General

2N6831

Abstract: Silicon Controlled Rectifiers Brown Boveri 16C40B 2n6871 16C20B 16C60B 2N685 2N688 2N690
Contextual Info: BBC HFMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEI M Silicon Controlled Rectifiers B R O W N BO V E R I Geschäftsbereich Halbleiter und Stromrichter Tel. 0 6 2 0 6 503-1, Telex 04-65 727 Postfach 200, D-6840 Lampertheim Series 16C 25 Amperes RSM

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

LT062

Abstract: mg15g1al3 EST051 GENTRON lt061 ET409 NPN MJ13091 2n6836 BUS48 et409
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Min (Hz) r ICBO Max (A) Max (s) (CE)««t Max (Ohms) Toper Max (°C) Package Style Devic s 20 Watts or More, (Cont'd) . . . .5 . . . -10 . .15 .

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0

c 3421 transistor

Abstract: GSRU20040 2n6924 gsru200 2N2891
Contextual Info: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .

2N6678

Abstract: 2N6921A SPT420 NPN Transistor VCEO 1000V
Contextual Info: Preliminary Data Sheet j o o 9^o 5 SPT420 NPN SSDI HIGH VOLTAGE HIGH SPEED PGUJER T R A N S I S T O R 40 AMPS, 1000V CASE STYLE JEDEC 14830 VALLEY V IEU LA MIRADA, CA.90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES T O —3 with .060 pins »►

2N3729

Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Contextual Info: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6

Contextual Info: SOLID STATE DEVICES INC 50E D • Ö3bb011 Q 0 0 2 n 0 2 SFT6925A NPSM HIGH VOLTAGE HIGH S P E E D POUJER T R A N S I S T O R 6 0 AMPS, 1000V CASE J E D E C STYL-E " T O — 3 WITH . 0 6 0 P I N S ► ► R A T I M Collector-Base Emitter-Base Collector FAX