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    Vishay Intertechnologies

    Vishay Intertechnologies SIHLZ14STRL-GE3

    LOGIC MOSFET N-CHANNEL 60V - Tape and Reel (Alt: SIHLZ14STRL-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHLZ14STRL-GE3 Tape & Reel 30 Weeks 800
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    • 1000 $0.37
    • 10000 $0.36
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    Mouser Electronics SIHLZ14STRL-GE3
    • 1 $1.72
    • 10 $1.06
    • 100 $0.70
    • 1000 $0.38
    • 10000 $0.37
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    Vishay Intertechnologies SIHLZ14STRR-GE3

    LOGIC MOSFET N-CHANNEL 60V - Tape and Reel (Alt: SIHLZ14STRR-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHLZ14STRR-GE3 Tape & Reel 30 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.37
    • 10000 $0.36
    		Buy Now
    Mouser Electronics SIHLZ14STRR-GE3
    • 1 $1.72
    • 10 $1.06
    • 100 $0.70
    • 1000 $0.38
    • 10000 $0.38
    		Get Quote

    Vishay Intertechnologies SIHLZ14S-GE3

    LOGIC MOSFET N-CHANNEL 60V - Tape and Reel (Alt: SIHLZ14S-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHLZ14S-GE3 Tape & Reel 30 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.37
    • 10000 $0.36
    		Buy Now
    Mouser Electronics SIHLZ14S-GE3
    • 1 $1.72
    • 10 $1.06
    • 100 $0.70
    • 1000 $0.38
    • 10000 $0.37
    		Get Quote

    SIHLZ14 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		irlz14sihlz142002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		irlz14sihlz14o-220ab2002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		irlz14sirlz14lsihlz14ssihlz14l+22002/95/eco-262 PDF

    irlz14

    Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		irlz14sihlz142002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    SiHLZ14S

    Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single G G S COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		irlz14sirlz14lsihlz14ssihlz14l+318-jul-08irlz14sihlz14s-e3 PDF

    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		irlz14sirlz14lsihlz14ssihlz14l+22002/95/eco-262 PDF

    IRLZ14

    Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		irlz14sihlz14o-22018-jul-08 PDF

    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		irlz14sirlz14lsihlz14ssihlz14l+22002/95/ec18-jul-08 PDF

    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		irlz14sirlz14lsihlz14ssihlz14l+22002/95/ec11-mar-11 PDF

    Contextual Info: IRLZ14_RC, SiHLZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irlz14sihlz14an609configurati5-oct-10+48649m6211m0526u9391m PDF

    Contextual Info: IRLZ14S_RC, IRLZ14L_RC, SiHLZ14S_RC, SiHLZ14L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		irlz14sirlz14lsihlz14ssihlz14l+4an6098649m6211m0526u PDF

    IRLZ14L

    Abstract: IRLZ14S SiHLZ14L SiHLZ14S SiHLZ14STR-E3
    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		irlz14sirlz14lsihlz14ssihlz14l+32002/95/ec11-mar-11sihlz14str-e3 PDF

    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		irlz14sirlz14lsihlz14ssihlz14l+3irlz14s/sihlz14sirlz14l/sihlz14l12-mar-07 PDF

    Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		irlz14sihlz14o-22012-mar-07 PDF

    IRLZ14

    Abstract: IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S SiHLZ14S-E3
    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		irlz14sirlz14lsihlz14ssihlz14l+318-jul-08irlz14sihlz14s-e3 PDF

    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


    Original     		irlz14sirlz14lsihlz14ssihlz14l+22002/95/ec2011/65/eu PDF

    IRLZ14

    Abstract: SiHLZ14 SiHLZ14-E3
    Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		irlz14sihlz14o-220ab2002/95/ec+211-mar-11sihlz14-e3 PDF

    Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		irlz14sihlz14o-220ab2002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		irlz14sihlz142002/95/eco-220ab+111-mar-11 PDF

    Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		irlz14sihlz14o-220ab2002/95/ec+22011/65/eu12-mar-12 PDF

    IRLZ14

    Abstract: SiHLZ14 SiHLZ14-E3
    Contextual Info: IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.20 Qg (Max.) (nC) 8.4 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.5 • 175 °C Operating Temperature


    Original     		irlz14sihlz14o-2202002/95/ec+218-jul-08sihlz14-e3 PDF