TT22 Search Results

TT2234

Contextual Info: TT2234 Ordering number : ENA0174 NPN Triple Diffused Planar Silicon Transistor TT2234 Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).

TT2234

Abstract: IT10381
Contextual Info: TT2234 注文コード No. N A 0 1 7 4 三洋半導体データシート N TT2234 NPN 三重拡散プレーナ型シリコントランジスタ カラーテレビ水平偏向出力用 特長 ・高速度である。 ・高耐圧である （VCBO=1500V） 。

KT88

Abstract: kt88 data TT21 TT22 marconi company marconi Marconi KT88
Contextual Info: BEAM TET R O D ES TT22 ISSUE 1 Beam tetrodes with oxide coated cathodes, the TT21 and TT22 are identical except for their heater ratings. They are designed for use as r.f. power amplifiers with full ratings at frequencies up to 30Mc/s and are also useful as audio output valves and pulse modulators.

a1139

Abstract: TT2274T A-1139 ib101a V8005
Contextual Info: TT2274T 注文コード No. N A 1 1 3 9 三洋半導体データシート N TT2274T NPN 三重拡散プレーナ型シリコントランジスタ スイッチング電源用 特長 ・高耐圧である VCBO ≧ 1400V 。 ・スイッチングスピードが速い。

TT2274T

Contextual Info: TT2274T Ordering number : ENA1139 SANYO Semiconductors DATA SHEET TT2274T NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • High breakdown voltage VCBO≥1400V . Ultrahigh-speed switching. Wide ASO. Specifications

TT2218LS

Contextual Info: TT2218LS 注文コード No. N 8 3 7 7 三洋半導体データシート N TT2218LS NPN 三重拡散プレーナ 型シリコントランジスタ カラーテレビ水平偏向出力用 特長 ・高速度である。 ・高耐圧である （VCBO=1500V）

TT2202

Abstract: IT02889 tt22
Contextual Info: TT2202 注文コード No. N 8 0 3 6 三洋半導体データシート N TT2202 NPN 三重拡散プレーナ形シリコントランジスタ カラーテレビ水平偏向出力用 特長 ・高速度である。 ・高耐圧である （VCBO=1500V） 。

TT2202

Abstract: TT220 ENN8036 IT02889
Contextual Info: TT2202 Ordering number : ENN8036 TT2202 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).

sanyo colour tv circuit diagram

Abstract: using of damper in Horizontal Output Transistor TT2218LS
Contextual Info: TT2218LS Ordering number : ENN8377 TT2218LS NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).

Si7454DDP

Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8

3DD5023

Abstract: E16 10 pin bobbin transformers transformer e19 E20 CORE size E16 10 pin transformers E19 CORE TRANSFORMER E16 CORE TRANSFORMER 6 pin DS-1423 8 pin e25 transformer E16 CORE TRANSFORMER 9 pin
Contextual Info: Basic Design Guide Resonant Discontinuous Forward Converter Rapidly Implement Application Circuits in the Range 6 W to 40 W Using CamSemi’s RDFC Topology and Advanced Controller ICs C2472PX2 SOT23-6 C2473PX1 (SOP-8) CamSemi’s RDFC topology and advanced controller ICs deliver low cost replacements for linear power

SIA461DJT1GE3

Abstract: 63838 sia461djt
Contextual Info: New Product SiA461DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 20 ID (A)a 0.033 at VGS = - 4.5 V - 12 0.042 at VGS = - 2.5 V - 12 0.055 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package

STLT29

Abstract: STLT29FI STLT30 STLT30FI
Contextual Info: 7 ^ 5^537 0 0 2 1 2 0 e] fl STLT30/FI STLT29/FI SGS-THOMSON iy 5 7 , N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS S 6 S-TH0MS0N T YPE V DSS ^D Sfon Id STLT30 STLT30/FI 60 V 60 V cs 00 o o a 00 o o 25 A 15 A STLT29 STLT29/FI 50 V 50 V 0.08 n

2A252

Contextual Info: VI COR CONFIDENTIAL REV. TH IS DO CUM ENT AN D T H E D A T A D IS C LO S ED H E RE IN OR H E R E W IT H IS N O T TO BE REP RO D U C ED , USED, OR D IS C LO S ED IN W H O LE OR IN P A R T TO A N Y O N E W ITH O U T PERM IS SIO N OP VICOR CORP. tt1 DESCRIPTION

Contextual Info: SGS-THOMSON [MOigœilLiera *® STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S TP2N A 50 STP2NA 50FI R d S oii 500 V 500 V < 4 a. < 4 0. Id 2 .8 A 2 A Cl • TYPICAL RüS(on) =3.25 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: VN B10N07/K10N07FM VNP10N07FI/VNV10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B10N 07 VNK1 0 N 07 F M VNP1 0 N 0 7 F I VN V10N 07 Vclamp 70 70 70 70 V V V V R D S o n 0.1 0.1 0.1 0.1 Q. a n Cl 11im 10 10 10 10 A A A A . . . . . . LINEAR CURRENT LIMITATION

Contextual Info: S G S -T H O M S O N l f o M D S B m iC T IF M O lg S o a b / c S E R IE S VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT PRELIMINARY DATA . . . . . . . . . • V E R Y LO W D R O PO U T VO LTA G E 0.45V V E R Y LO W Q U IE S C E N T C U R R EN T (TYP. 50 \xA IN O F F M O D E, 500|aA IN ON

Contextual Info: STPR151OD/F STPR1520D/F SGS-THOMSON £ RjflQ»[E[UiM R!lD gi ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY

dt5 tuner module

Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Contextual Info: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Contextual Info: FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =1.7V @ IC = 5A Using novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.

EFD34

Abstract: DS161R Motor Control Center wiring diagram abb TFK catalog EX-88 WESTINGHOUSE motor life line westinghouse mcp breaker TFK 543 TC236
Contextual Info: Industrial Control & Circuit Breakers Section C Innovative, intelligent NEC and IEC solutions safely and efficiently control power and protect circuits in explosive, wet, and corrosive environments worldwide. New Products in the Control Product Line Section

BCM 4709

Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841
Contextual Info: User’s Manual 16 表紙 78K0R/Fx3 ユーザーズマニュアル ハードウェア編 16 ビット・シングルチップ・マイクロコントローラ 本資料に記載の全ての情報は本資料発行時点のものでありルネサス エレクトロニクスは、

Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8

tp3055

Abstract: MTP3055EFI TP3055E MTP3055E TP3055EFI
Contextual Info: Gì SCS-THOMSON MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI V d ss R o S on Id 60 V 60 V 0.1 5 Q 0.15 Si 14 A 10 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C