GC20930 Search Results

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STP3NB60 STP3NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYP E STP3N B60 STP3N B60FP • . . . . V dss R D S (on) Id 600 V 600 V < 3 .6 Q. < 3.6 Q. 3 .3 A 2 .2 A TYPICAL RDS(on) =3.3 EXTREMELY HIGH dv/dt CAPABILITY

GC20930

Abstract: 6v dc motor IG 2200 19
Contextual Info: SGS-THOMSON STP25N06 STP25N06FI IM N - CHANNEL EN H A N C EM EN T M ODE PO W ER M OS TR A N SISTO R TYPE STP25N06 STP25N06FI . . . . . . V dss RDSfon 60 V 60 V 0.07 0.07 Id a il 25 A 16 A AVALANCHE RUG G EDN ESS TEC HNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

Contextual Info: STP36NE06 STP36NE06FP N - CHANNEL 60V - 0.032Î2 - 36A - T0-220/T0-220FP STripFET POWER MOSFET TYP E V dss RDS on Id STP36NE06 STP36NE06FP 60 V 60 V < 0 .0 4 0 Q. < 0 .0 4 0 Q. 36 A 20 A . TYPICAL Ros(on) =0.032 £2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED

irc820

Abstract: irf transistors IRF 820 i821
Contextual Info: SGS-THOMSON ¡L IOT iOûS IRF820/FI-821/FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF820 IRF820FI V dss I 500 500 R DS(on Id 3 Q 3 a 3 A 2.2 A 3 1) 3 a 3 A 2.2 A 4 n 4 il 2 .8 A V V IRF821 IRF821FI 450 V 450 V IRF822 IRF822FI 500

TP36N

Abstract: DIODE RK 306
Contextual Info: STP36NE06 STP36NE06FP N - CHANNEL 60V - 0.032Î2 - 36A - T0-220/T0-220FP STripFET POWER MOSFET TYPE V STP36N E06 STP36NE06FP dss 60 V 60 V R D S o n Id < 0.040 Q. < 0.040 Q, 36 A 20 A . TYPICAL RDs(on) = 0.032 C2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED