TT70S7Û Search Results

SEC irf630

Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Contextual Info: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

G296

Abstract: ZVP2120
Contextual Info: ZETEX SEMICONDUCTORS ‘Ì S D V ^70570 □ D D S 7 ci3 M • ZETB 95D 0 5 7 9 3 T ' 3 ? ' 2 5 P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ISSUE 1 - APRIL 94_ *— - FEATURES * * 400 Volt VCE0 0.5 Amp continuous current * Ptot=1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: BYS 33 Silicon Schottky barrier diodes FEATURES • Forward current 25 A • Reverse voltage 25 V - 45 V • Higher efficiency • Available in different modifications of the package APPLICATIONS • Rectifying in low voltage power supplies • Chopper • Rectifier bridges