ZVP2120 Search Results

P-Channel Enhancement Mode Vertical DMOS FET

Abstract: ZVP2120A ZVP2120C
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS

1SAM

Contextual Info: ZVP2120Z SOT89 P CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET * PARTMARKING DETAIL - P10 FOR TYPICAL CHARACTERISTICS GRAPHS SEE ZVP2120G DATASHEET ABSOLUTE M AXIM UM RATINGS PARAMETER SYM BOL » VALUE ' UNIT -200 -0.17 -1.2 Drain-Source Voltage Continuous Drain Current @ Tamb=25°C

ZVP2120A

Abstract: to92 fet p channel DSA003787
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS

Contextual Info: P-CHANNEL ENHANCEMENT ZVP2120C MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 200 Vo lt VDS * RDS on.=25n _ REFER TO ZVP2120A FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT

Contextual Info: ZVP2120A Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)200 I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

ZVP2120

Abstract: ZVP2120G ZVN2120G DSA0037407
Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VDS * RDS on =25Ω ✪ PARTMARKING DETAIL – COMPLEMENTARY TYPE – ZVP2120 ZVN2120G ZVP2120G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

G296

Abstract: ZVP2120
Contextual Info: ZETEX SEMICONDUCTORS ‘Ì S D V ^70570 □ D D S 7 ci3 M • ZETB 95D 0 5 7 9 3 T ' 3 ? ' 2 5 P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 O_ FEATURES * 200 V o lt V DS * Ros.onpzsa PARTM ARKING DETAIL - ZVP2120 CO M PLEM ENTARY TYPE - ZVN2120G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT

Contextual Info: Not Recommended for New Design Please Use ZVP2120A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω G REFER TO ZVP2120A FOR GRAPHS D G D S E-Line

Contextual Info: bOE D • ^^70570 000712^ 551 « Z E T B ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VDS * RDS on =25Ω ✪ PARTMARKING DETAIL – COMPLEMENTARY TYPE – ZVP2120 ZVN2120G ZVP2120G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

ZVP2120

Abstract: plessey ZVP P-channel
Contextual Info: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY 7s SEMICOND/DISCRETE ZVP2120 FEATURES Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 3 - OCTOBER 1995 ZVP2120G O_ — " FEATURES * 200 Volt V DS * RDs onr25G P A R T M A R K IN G D E T A IL - ZVP2120 C O M P L E M E N T A R Y TY PE - ZVN2120G ABSOLUTE M A X IM U M RATINGS.

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ISSUE 2 -MARCH 94_ FEATURES * 200 V olt VDS * ^DS on = ^ 5 i i REFER TO ZVP2120A FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS

Contextual Info: ZVP2120AM1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

Contextual Info: ZVP2120G Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)200m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2 Minimum Operating Temp (øC)-55

ZVP2120A

Abstract: P-Channel FET 100v to92
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS

Contextual Info: ZVP2120L Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

bcm847

Contextual Info: UM10479 SSL2101 120 V 7.5 W GU10 flyback reference board Rev. 1.1 — 19 August 2011 User manual Document information Info Content Keywords SSL2101, flyback, convertor, dimmable, active bypass Abstract This document explains the operation and application of a 7.5 W 120 V

FXT2222A

Abstract: FXT2907A FXT3904 FXT3906 ZVN2110C ZVN2120C ZVN4206C ZVNL120C ZVP2110C ZVP2120C
Contextual Info: CENTRE COLLECTOR E-LINE TABLE 6: SW ITCH IN G T R A N SIST O R S Type V ceo Max • V CE sat at Max. •c Min at h FE at Iß •c h Max. switching times !c to n ^o ff ns mA V mA V mA mA Min. Max. mA MHz mA ns F XT2222A 40 800 1.0 500 50 100 300 150 300 20

Contextual Info: bGE D • ZETEX SEMICONDUCTORS 4 tlt:J7DS?ô ÜQD?bûS b 3 fi ■ ZETB CENTRE BASE E-LINE 'M V 'P' Channel Small Signal MOSFETs Part Number BV dss Id 'dm V mA A V Min. VcSlth Max. a •o mA ÎÎ a Max. R d S I o ii ) Id mA Pd VP w ZVP0545AM 1 -450 -45 - 0 .4

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455