TT70S7 Search Results

SEC irf630

Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Contextual Info: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZTX502

Abstract: BC212 BC307 BC556A BC556B BC557A BCY77A BCY77B BCY77C ZTX504
Contextual Info: SbE ]> • TT70S7Ô GDG70MÛ 275 B Z E T B SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS IcBO V CE|sat| c at lc Max. ■b fr CoBO Min. Max. I at < V CEO Min. Min. Max. at VCB o m V cbo Dice type Volts Volts nA Volts Min. Max. mA Volts Volts mA mA MHz Chip

Contextual Info: ZE TE X INC TS D • TT70S7Ô 000b13^ 1 ■ 95D 0 6 1 3 9 D m 7 zS h io -fo ZN503A J ZN504CJ ZIM504E 10-bit microprocessor compatible A -D converter A D V A N C E PRODUCT INFORMATION FEATURES DESCRIPTION • No missing codes over full temperature range at appropriate accuracy

Contextual Info: ZE TE X INC Ì5 TT70S7Ö □0050^3 ê 9SD 05893 n T-Sl-09-08 ZN429E-8 ZN429J-8 ZN429D Low cost 8-bit monolithic D-A converter FEATURES DESCRIPTION • The ZN429 is a m onolithic 8-bit D-A converter, • • • • • • • ZN429E-8 and ZN429D SO-14 Commercial temperature range O to 7 0 °C

REF25Z

Contextual Info: ZE TE X INC IS J> m c]T70S7fl 00□ bE□ b 1 95D 0 6 2 0 6 T - S 2 - 0 7 2 .5 V m icropower precision references REF25 REF25Z FEATURES • Low knee current - typically 40ftA • Ideal for battery operation - 150fiW • Internally shaped • REF25Z - 3 lead TO-92 plastic package

1N3220

Contextual Info: ZE TE X IN C T5 D 95D 0 6 0 5 1 8-bit ¡xP compatible A-D converter ZN447 ZN449 D ZN448 FEATURES DESCRIPTION • Easy Interfacing to microprocessor, or operates as a 'stand-alone' converter • Fast: 9/xs conversion tim e guaranteed • Choice o f linearity: 0.3LS B - Z N 4 4 7 ,

Contextual Info: Silicon rectifier diodes BYY57A /BYY58A FEATURES • Forward current 50 A • Reverse voltage 75 V - 800 V • hermetic press-fit package • Available in different modifications of the package APPLICATIONS • Rectifying in car generators • Power supplies

ca 361 e ic

Contextual Info: PNP SILICON PLANAR POWER TRANSISTOR ZBD957 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * * * Fast switching Guaranteed hFE specified up to 1 A m p L o w collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Collector-Base Voltage

VQC10

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 IS SU E 2 - SEPTEM BER 1995 FEA TU RES * 2A CONTINUOUS CURRENT * FA ST SW ITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COM PLEM ENTARY TYPE - FZT604 PART MARKING D ETAIL FZT704 •= ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SM-8 DUAL NPN MEDIUM POWER DARLINGTON TRANSISTORS ZDT605 ISSUE 1 - NOVEMBER 1995 ABSOLUTE MAXIMUM RATINGS. P A R A M ET E R SYM BOL Collector-Base Voltage Collector-Em itter Voltage Em itter-Base Voltage VALU E UNIT V cbo 140 V VcEO 120 V V EBO 10 V A Peak Pulse Current

G296

Abstract: ZVP2120
Contextual Info: ZETEX SEMICONDUCTORS ‘Ì S D V ^70570 □ D D S 7 ci3 M • ZETB 95D 0 5 7 9 3 T ' 3 ? ' 2 5 P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6726 2N6727 ISSUE 1 - MARCH 94_ FEATURES * 40 Volt V,CEO Gain of 50 at lc = 1 Amp P,0,=1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6726 2N6727 UNIT Collector-Base Voltage

ZN428E-8

Contextual Info: ZE TE X INC TS D ^=170570 0005003 S T-51-09-08 ZN428E-8 ZN428J-8 8-bit latched input monolithic D-A converter FEATURES G E N ER A L D ESC R IP T IO N • The Z N 4 2 8 is a monolithic 8-bit D -A converter • • • • • • • • • Contains D A C with data latch and on-chip

Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - OCTOBER 1995 BC868 | m O_ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt V,DS R DS on -8£2 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage Continuous Drain Current at Tamly=250C Pulsed Drain Current Gate Source Voltage VALUE UNIT < o tn PARAMETER

4x500

Contextual Info: 15 ZE TE X INC TT7057Ö G0Gb035 0 95 D 0 6 0 3 5 / *“5 V * '/ 0 - 6 7 6-bit video A-D converter ZN440 ZN441 FEATURES 1 6 M H z sam ple rate - Z N 4 4 0 6-bit resolution Expandable to 7 or 8 bits ± 'h L S B linearity N o sam ple and hold required U nipolar or bipolar analogue input

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ISSUE 1 - APRIL 94_ *— - FEATURES * * 400 Volt VCE0 0.5 Amp continuous current * Ptot=1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR o FEATURES * 350 Volt VCE0 * Gain of 15 at lc=-i00m A M, APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE FMMT6517 PARTMARKING DETAIL - 520 SOT23 ABSOLUTE MAXIMUM RATINGS. VALUE

Contextual Info: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR FZT869 ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(jat)36m£i at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp

Contextual Info: Ti7DS7fl GGa?ÔÔS 4TT bOE D ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP0120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

analogue ohmmeter circuit diagram

Abstract: transistor tt 2170 em digital ic cd 4066 BUT18
Contextual Info: ZE TE X INC TS » • TÌ70570 DDDbCm 4 ■ 95D 06 0 9 9 T 'S t - t O - e S " ZN451E ZN451CJ 3 y2 digit DVM 1C with external auto-zero DESCRIPTION EATURES External circuits may be included in the auto-zero loop ’ Full-scale reading 1 .9 9 9 m V or lower

Contextual Info: BYS 33 Silicon Schottky barrier diodes FEATURES • Forward current 25 A • Reverse voltage 25 V - 45 V • Higher efficiency • Available in different modifications of the package APPLICATIONS • Rectifying in low voltage power supplies • Chopper • Rectifier bridges

ZN436E

Abstract: ZLD741
Contextual Info: TS TE X INC D • T17057fl G00ST21 1 95D 0 5 9 2 1 T-5Ì-09-07 ZN436E ZN436J Low cost 6-bit monolithic D-A converter FEATURES DESCRIPTION • • The ZN 436 is a monolithic 6-bit D-A converter • • • • • 6-bit accuracy ZN436E commercial temperature range

Contextual Info: 4.0V LOW POWER PRECISION REFERENCE SOURCE ZRT040 ISSU E 1 - OCTOBER 1995 DEVICE DESCRIPTION FEATURES The ZRT040 is a monolithic integrated circuit providing a precise stable reference voltage of 4.01V at 500pA. • Trimmable output The circuit features a knee current of 150nA and