BC556B Search Results

BC556B

Abstract: bc558b bc557 transistor BC556b
Contextual Info: BC556B, BC557, A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC556 BC557 BC558 Collector-Base Voltage Vdc –65 –45 –30 VCBO BC556 BC557 BC558 Emitter-Base Voltage

BC557 transistor pin details

Abstract: transistor marking bc557 BC556B BC557BRL1G bc557bg BC556BG BC557A pin diagram of transistor BC558 BC558 BC557
Contextual Info: BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC556 BC557 BC558 Collector - Base Voltage Vdc

BC556B

Abstract: bc558b free BC557 bc557 BC557 TRANSISTOR application 6885_BC556B BC557 application note transistor BC556b transistor BC557 base collector emitter BC557 pin out
Contextual Info: BC556B, BC557, A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC556 BC557 BC558 Collector-Base Voltage Vdc –65 –45 –30 VCBO BC556 BC557 BC558

T2 BC558 TRANSISTOR

Abstract: BC55x BC556B pin diagram of transistor BC558 transistor BC556b BC557AZL1G BC557BG BC557 application note information of BC557 BC556
Contextual Info: BC556B, BC557A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC556 BC557 BC558 Collector - Base Voltage Vdc

bc558c

Abstract: BC212
Contextual Info: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS V CBO V CEO Dice type ^CBO Min. Min. Max. at VCB hFE at V CEIsatl lc VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC556A BC556B 80 80 ZTX504 BCY77A 70 60t BCY77B 60t BCY77C BC212 BC307 60t 60 50t

BC557

Abstract: BC558 transistor bc557 bc556 BC557 data sheet BC557 TRANSISTOR BC558 pnp transistor TRANSISTOR BC558 transistor BC556b bc556b
Contextual Info: BC556B/57ABC/58B BC556, B BC557, A, B, C BC558, B TRANSISTOR PNP TO-92 FEATURES Power dissipation 0.625 W (Tamb=25℃) PCM: Collector current -0.1 A ICM: Collector-base voltage BC556 -80 V VCBO: BC557 -50 V BC558 -30 V Operating and storage junction temperature range

Contextual Info: BC556B Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.180 h(FE) Max. Current gain.460

BC556BP

Contextual Info: BC556BP Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)65è V(BR)CBO (V)80 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

operation of BC557 TRANSISTOR

Abstract: BC557 pin out BC558B uses of bc557 BC556B bc557 BC557 application note free BC557 BC557A transistor BC556b
Contextual Info: BC556B, BC557, A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC556 BC557 BC558 Collector-Base Voltage Vdc –65 –45 –30 VCBO BC556 BC557 BC558

BC307A

Abstract: BC308B BC212A BC212B BC307B BC556A BC556B BC557A BCY77A BCY77B
Contextual Info: ELECTRICAL CHARACTERISTICS a TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P. SMALL SIGNAL TRANSISTORS hpE Dice Type BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC557A BC557B BCY70 BCY79A BCY79B BCY79C BCY71 2N3905 2N3906 BC213A BC213B BC213C

bc558b

Abstract: bc556b bc558c transistor BC556b BC557 application note transistor IC 557B free BC557 bc557 BC557 TRANSISTOR application BC557 bc556
Contextual Info: BC556B, BC557, A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC556 BC557 BC558 Collector-Base Voltage Vdc –65 –45 –30 3 EMITTER VCBO BC556 BC557 BC558

Contextual Info: This Pro Electron Series Material tr In ain Pro Electron Bipolar Devices continued t-1 Copyrighted a □ aXT UJ □ In fcH -O aLn V * t ces Device No. BC548A BC548B By Cn BC548C Its Respective BC549 BC549B Manufacturer BC549C BC550 BC550B BC556B BC557 Case

BC557

Abstract: bc558b BC556BG BC557 transistor pin details
Contextual Info: BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO Vdc VCBO Vdc −80 −50 −30 BC556 BC557 BC558

TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Contextual Info: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc5478

Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Contextual Info: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L

BC556

Abstract: of bc557 BC557 of pnp transistor BC557 of transistor bc558 transistor bc558 features bc556c equivalent BC558C BC556B BC557A
Contextual Info: BC556, B, C BC557, A, B, C BC558, A, B, C Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES PNP Transistor TO-92 Power dissipation PCM: 0.625 W Tamb=25℃ Collector current - 0.1 A ICM: Collector-base voltage

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

BC557

Abstract: transistor BC557 base collector emitter transistor BC558 base collector emitter bc558 bc556 transistor bc558 features BC557 TRANSISTOR PNP Transistor BC557 BC548 or BC558B TRANSISTOR BC557 bc556
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC556/BC557/BC558 TRANSISTOR PNP TO-92 FEATURES z High Voltage z Complement to BC546/BC547/BC548 1. COLLECTOR 2. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

BC48b

Abstract: BC486L BC488A BC488B BC488L BC490 BC490A BC490B BC556 BC556A
Contextual Info: E TO-92 Plastic Package Transistors PNP _ :_ . . * m w i: Electrical Characteristics (Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. BC486L BC48B BC488A BC488B BC488L BC490 BC490A BC490B ^CDO ^ C E O (V) (V)

pin configuration pnp transistor BC558

Abstract: BC557C pin configuration pnp transistor BC557 pin configuration transistor bc558 BC557A bc557 transistor BC556b BC557C polarity bc558 transistor c 557B
Contextual Info: MCC BC556,B BC557,A,B,C BC558,B
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor

bc557 and application

Contextual Info: MCC BC556,B BC557,A,B,C BC558,B
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x Case Material: Molded Plastic.

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

BC557C

Abstract: transistor bc558 features
Contextual Info: MCC BC556,B BC557,A,B,C BC558,B
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x • Amplifier Transistor