BC558 Search Results

BC556

Abstract: of bc557 BC557 of pnp transistor BC557 of transistor bc558 transistor bc558 features bc556c equivalent BC558C BC556B BC557A
Contextual Info: BC556, B, C BC557, A, B, C BC558, A, B, C Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES PNP Transistor TO-92 Power dissipation PCM: 0.625 W Tamb=25℃ Collector current - 0.1 A ICM: Collector-base voltage

BC557

Abstract: transistor BC557 base collector emitter transistor BC558 base collector emitter bc558 bc556 transistor bc558 features BC557 TRANSISTOR PNP Transistor BC557 BC548 or BC558B TRANSISTOR BC557 bc556
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC556/BC557/BC558 TRANSISTOR PNP TO-92 FEATURES z High Voltage z Complement to BC546/BC547/BC548 1. COLLECTOR 2. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: SWITCHING AND AMPLIFIER •Complement to BC558 SWITCHING AND AMPLIFIER ·Complement to BC559 ABSOLUTE MAXIMUM RATINGS Characteristic TO-92 TA=25 Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO

Contextual Info: SWITCHING AND AMPLIFIER •Complement to BC558 SWITCHING AND AMPLIFIER ·Complement to BC548 ABSOLUTE MAXIMUM RATINGS Characteristic TO-92 TA=25 Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO

pin configuration pnp transistor BC558

Abstract: BC557C pin configuration pnp transistor BC557 pin configuration transistor bc558 BC557A bc557 transistor BC556b BC557C polarity bc558 transistor c 557B
Contextual Info: MCC BC556,B BC557,A,B,C BC558,B
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor

bc557 and application

Contextual Info: MCC BC556,B BC557,A,B,C BC558,B
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x Case Material: Molded Plastic.

BC557C

Abstract: transistor bc558 features
Contextual Info: MCC BC556,B BC557,A,B,C BC558,B
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x • Amplifier Transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC556/BC557/BC558 TRANSISTOR PNP TO-92 FEATURES z High Voltage z Complement to BC546/BC547/BC548 1. COLLECTOR 2. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

c557b

Abstract: BC5568 BC5588 BC5578 c558c c556 C557 8C5578 bc558c BC558A
Contextual Info: BC556 to 558 J L _ SILICON PLANAR EPITAXIAL TRANSISTORS General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable fo r use in driver stages of audio amplifiers. Q U IC K REFERENCE D A T A BC556 BC557 BC558 C ollector-emitter voltage + V g £ = 0 V

pin configuration NPN transistor BC558

Abstract: pin configuration pnp transistor BC558 pin configuration npn transistor BC557 pin configuration NPN transistor BC548 pin configuration pnp transistor BC557 BC558 pin BC558 transistor BC558 BC558 Datasheet BC557
Contextual Info: BC556 thru BC558 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors PNP TO-226AA (TO-92) Features 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications.

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

pin diagram of transistor BC548

Abstract: BC547 collector characteristic curve pin diagram transistor BC547 BC548 pin diagram transistor bc547 features pin diagram of bc548 Amplifier with transistor BC548 BC548 BC546-BC548 BC548 TRANSISTOR
Contextual Info: BC546 - BC548 NPN EPITAXIAL PLANAR TRANSISTOR Features Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 hM h H TO-92 Mechanical Data_ • • • • Case: TO-92, Plastic

bc557 SMD

Abstract: bc558 SMD bc556 SMD BC557 in smd package CBC557 smd transistor BC557 datasheet BC557 smd PACKAGE smd transistor BC557 SMD BC557 BC557
Contextual Info: BC556,A,B,C BC557,A,B,C BC558,A,B,C PNP Silicon Planar Epitaxial Transistors 1 2 3 TO-92 SMD Package Absolute Maximum Ratings Ta = 25 oC unless specified otherwise SYMBOL BC556 DESCRIPTION VCEO 65 Collector Emitter Voltage V Collector Emmitter Voltage 80

transistor bc558

Abstract: H558 500mW 5v transistor BC558
Contextual Info: PNP SILICON 汕头华汕电子器件有限公司 TRANSISTOR 对应国外型号 BC558 H558 █ 主要用途 █ 外形图及引脚排列 开关视频放大。 █ 极限值（Ta=25℃） TO-92 T stg ——贮存温度………………………………… -55~150℃

C 547 B

Abstract: c547b c546b TRANSISTOR B 546b transistor C 546b C 546 B C548 free BC557 BC557 C546
Contextual Info: BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V 625 mWatts POWER FEATURES • NPN epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary PNP device:BC556,BC557,BC558 Series • Pb free product :99% Sn above can meet RoHS

pin configuration pnp transistor BC557

Abstract: pin configuration pnp transistor BC558 BC557 pin description pin out TRANSISTOR bc557 transistor bc557 pins details information of BC558 uses of bc557 BC557 pin out BC557 transistor pin details T1 BC558
Contextual Info: IS/ISO 9002 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC556, A, B, C BC557, A, B, C BC558, A, B, C TO-92 Plastic Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS Ta=25 deg C unless otherwise specified

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTO BC558 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER * Complement to Bc548 ABSOLUTE MAXIMUM RATINGS a t Tamb=25°C Symbol R ating C haracteristic Unit Collector-Base Voltage CoHector-Emitter Voltage

BC557

Abstract: BC558C BC558 NPN Transistor BC557 semiconductors BC558 pnp transistor npn bc557 transistor bc558 features BC557 PNP TRANSISTOR BC557 pin PNP Transistor BC557
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification.

TRANSISTOR C 557 B

Abstract: operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR transistor 557 b free BC557 transistor bc558 features of pnp transistor BC557 transistor c 557 transistor c 558
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 Lead-free: BC556L/BC557L/BC558L Halogen-free:BC556G/BC557G/BC558G „ ORDERING INFORMATION Normal BC556-x-T92-B

Contextual Info: BC558P Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.75 h(FE) Max. Current gain.

BC558AP

Contextual Info: BC558AP Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30è V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC558VI Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC558CP Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30è V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC558 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.120 h(FE) Max. Current gain.800