bc558c
Abstract: BC212
Contextual Info: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS V CBO V CEO Dice type ^CBO Min. Min. Max. at VCB hFE at V CEIsatl lc VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC556A BC556B 80 80 ZTX504 BCY77A 70 60t BCY77B 60t BCY77C BC212 BC307 60t 60 50t
|
OCR Scan
|
bc556abc556bztx504bcy77a+7bcy77bbcy77cbc212bc307bc557abc557bbc558c
|
PDF
|
BC307A
Abstract: BC308B BC212A BC212B BC307B BC556A BC556B BC557A BCY77A BCY77B
Contextual Info: ELECTRICAL CHARACTERISTICS a TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P. SMALL SIGNAL TRANSISTORS hpE Dice Type BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC557A BC557B BCY70 BCY79A BCY79B BCY79C BCY71 2N3905 2N3906 BC213A BC213B BC213C
|
OCR Scan
|
bc556abc556bbcy77abcy77b+8bcy77cbc212abc212bbc307abc307bbc558bbc308bbc557a
|
PDF
|
transistor ZTX302
Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE
|
OCR Scan
|
ztx453ztx452ztx552mpsa06+13mpsa56bc546pbc556pztx451bc558bbc558ctransistor ztx302ztx502transistor ztx304bfs98ztx109transistor mpsa06transistor ztx108
|
PDF
|
ZTX504
Abstract: BC212 BC307 BC556A BC556B BC557A BC557B BC557C BCY77A BCY77B
Contextual Info: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS Volts Volts nA Volts Min. Max. V CEIsatl *c < hFE at IcBO Min. Min. Max. at V CB o m V CBO V CEO Dice type at llc mA Volts Volts mA Max. *b mA fr C obo Min. Max. MHz Chip geometry PF BC556A 80 65 15 30 110 220
|
OCR Scan
|
bc556abc556bztx504bcy77a+8bcy77bbcy77cbc212bc307bc557aztx502bc557bbc557c
|
PDF
|
bc461
Abstract: BCY39A BCY87 T071 BC461-6 BCY89 BCY70 BS BCY34A BCY56 BC477
Contextual Info: 4ÖE D • 0133107 0DGQ447 RG4 ■ SMLB SEM ELABE SEHELAB L T J> T -Z >.a I BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 BCW35 BCY30A BCY31A BCY32A DCY33A BCY34A BCY39A BCY40A BCY42
|
OCR Scan
|
0dgq447bc461-6bc477bc477a+14bc477bbc478bc478abc478bbc479bcw34bc461bcy39abcy87t071bcy89bcy70 bsbcy34abcy56
|
PDF
|
BC557P
Abstract: ZTX501 BC212P ZTX504 ZTX108 ZTX502 BC177P BC182P BC546P BC547P
Contextual Info: TAB LE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed fo r small signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, AND GENERAL PURPOSE
|
OCR Scan
|
bc556pbc546pztx504ztx304+10ztx212ztx107bc212pbc182pbc557pbc547pztx501ztx108ztx502bc177p
|
PDF
|
2SA1283D
Abstract: bcw56a Motorola 2N3809 LOW-POWER SILICON PNP TO77
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 BC303-6 BC303-6 2N3579 KT214Gl BCW89 BCW89 BCW89 BCW89R BCW89R BCW89R ~~XIJ2A -15 20 25 30 - 35 40 2N4413A BSR30 BSR30 BCW56A PB6014S 2SBll16AL BC488A18 BC488A5 -SO 60 70 -80 85 -90 95 ~eelnClex See Index
|
Original
|
bc303-62n3579kt214glbcw89+6bcw89r2sa1283dbcw56amotorola 2n3809low-power silicon pnpto77
|
PDF
|
ZTX502
Abstract: BC212 BC307 BC556A BC556B BC557A BCY77A BCY77B BCY77C ZTX504
Contextual Info: SbE ]> • TT70S7Ô GDG70MÛ 275 B Z E T B SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS IcBO V CE|sat| c at lc Max. ■b fr CoBO Min. Max. I at < V CEO Min. Min. Max. at VCB o m V cbo Dice type Volts Volts nA Volts Min. Max. mA Volts Volts mA mA MHz Chip
|
OCR Scan
|
tt70s7gdg70mbc556abc556b+8ztx504bcy77abcy77bbcy77cbc212bc307ztx502bc557a
|
PDF
|
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
|
Original
|
2c4152c4252c4442c746+162n1131l2n11322n1132csm2n1132dcsm2n12082n1209diode 400v 5alm1083bzy55ctransistor 2n1208bc109 spiceirf9024cv7404mnt6337jsml1258sml1004rgn
|
PDF
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
|
PDF
|
TRANSISTOR BC140
Abstract: applications of Transistor BC108 BC558C bc140 TRANSISTOR BC308B 2N2102 2N2605 2N4036 BC141 BC161
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
|
OCR Scan
|
zt211bc558bbc558cbc559b+14bc559cbcy72bc308abc308bbc308cbc309btransistor bc140applications of transistor bc108bc140 transistor2n21022n26052n4036bc141bc161
|
PDF
|
APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
|
OCR Scan
|
edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
|
PDF
|