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Harris Semiconductor
IRF632 Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Rochester Electronics IRF632 22,035 1 $1.57 $1.57 $1.4 $1.28 $1.28 Buy Now
Others
IRF632
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
PUI IRF632 10 - - - - - Buy Now
Chip 1 Exchange IRF632 70 - - - - - Get Quote

IRF632 datasheet (25)

Part Manufacturer Description Type PDF
IRF632 Fairchild Semiconductor N-Channel Power MOSFETs, 12A, 150-200 V Scan PDF
IRF632 FCI POWER MOSFETs Scan PDF
IRF632 Frederick Components Power MOSFET Selection Guide Scan PDF
IRF632 General Electric Power Transistor Data Book 1985 Scan PDF
IRF632 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. Scan PDF
IRF632 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
IRF632 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
IRF632 Motorola Switchmode Datasheet Scan PDF
IRF632 Motorola European Master Selection Guide 1986 Scan PDF
IRF632 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
IRF632 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF632 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
IRF632 Others Shortform Transistor PDF Datasheet Scan PDF
IRF632 Others Shortform Transistor PDF Datasheet Scan PDF
IRF632 Others Shortform Datasheet & Cross References Data Scan PDF
IRF632 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
IRF632 Others Semiconductor Master Cross Reference Guide Scan PDF
IRF632 Others FET Data Book Scan PDF
IRF632 National Semiconductor N-thannel Power MOSFETs Scan PDF
IRF632 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

IRF632 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
irf630

Abstract: IPF630 IRF632 1RF631 IRF631 IRF633 MOSFET 20V 100A IFIF633 IFIF631 motor characteristics curve
Text: Standard Power MOSFETs IRF630, IRF631, IRF632 , IRF633 Power MOS Field-Effect Transistors File , carrier device TERMINAL DIAGRAM The IRF630, IRF631, IRF632 and IRF633 are n-channel enhancement-mode , JEDEC TO-22ÛAB Absolute Maximum Ratings Parameter IRF630 IRF631 IRF632 IRF633 Units Vqs Drain â , . (1.6mm) from case for 10s) °c ,3-164 -Standard Power MOSFETs IRF630, IRF631, IRF632 , IRF633 , Test Conditions BVjjgg Dram Source Breakdown Voltage IRF630 IRF632 200 - V vGS = OV l0 = 250MA


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PDF IRF630, IRF631, IRF632, IRF633 50V-200V IRF632 IRF633 irf630 IPF630 1RF631 IRF631 MOSFET 20V 100A IFIF633 IFIF631 motor characteristics curve
IRF630

Abstract: IRFP230 for IRF630 IRFP231 IRF630 mosfet F632 ade 633 IRF632 IRF633 IRFP233
Text: tu re relia b ility PRODUCT SUMMARY Part Number IRF630/IRFP230 IRF631 /IRFP231 IRF632 /IRFP232 , 30 0 IRF630 IRFP230 200 200 IHF631 IRFP231 150 150 ±20 8 .0 5.0 32 8 .0 5 .0 32 IRF632 IRFP232 200 , Characteristic Drain-Source Breakdown Voltage IRF630/IRFP230 IRF632 /IRFP232 IRF631 /IRFP231 IRF633/IRFP233 VGSIRF630/IRFP230 IR F631 /IR F P 231 IRF632 /IRFP232 IRF633/IRFP233 Static Drain-Source On-State Resistance (2) IRF630/IRFP230 IRF631 /IRFP231 IRF632 /IRFP232


OCR Scan
PDF IRF630/631Z632/633 FP230/231/232/233 O-220 IRF630/IRFP230 IRF631 /IRFP231 IRF632/IRFP232 IRF633/IRFP233 IRF630/631/632/633 IRFP230/231/232/233 IRF630 IRFP230 for IRF630 IRFP231 IRF630 mosfet F632 ade 633 IRF632 IRF633 IRFP233
rf630

Abstract: IRF630 IRF632 OT391 IRF631 IRF633 j01 relay
Text: , IRF631, IRF632 , IRF633 N-Channel Enhancement-Mode Power Field-Effect Transistors 8.0A and 9.0A , The IRF630, IRF631, IRF632 and IRF633 are n-channel enhancement-mode silicon-gate power field-effect , «2CS-3992« JEDEC TQ-220AB Absolute Maximum Ratings Parameter IRF630 IRF631 IRF632 IRF633 Units , 0 IE 18355 D_T~3?~//_ IRF630, IRF631, IRF632 , IRF633 Electrical Characteristics @Tc = 258C (Unless , Voltage IRF630 IRF632 200 - - V VGS = OV lD » 250pA IRF631 IRF633 150 - - V vGS(ihl Gate Threshold


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PDF 3fl75Dfll IRF630, IRF631, IRF632, IRF633 50V-200V IRF632 IRF633 rf630 IRF630 OT391 IRF631 j01 relay
SEC irf630

Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Text: N-channel enhancement mode vertical DMOS FET IRF630 IRF631 IRF632 IRF633 FEATURES · · · · · · · Compact , , reliability and ruggedness. PRODUCT SUMMARY Part No. IRF630 IRF631 IRF632 IRF633 BVcss 200V 1B0V 200V 150 V , 0005575 S ZETB 95D 0 5 5 7 5 D IRF630 IRF631 IRF632 IRF633 ABSOLUTE MAXIMUM RATINGS Parameter VD S ·o ·d m IRF630 200 9 36 ±20 75 IRF631 150 9 36 ±20 75 IRF632 200 8 32 ±20 75 IRF633 , °C unless otherwise stated) Parameter BVdss Drain-source breakdown voltage Part No. Min. IRF630 IRF632


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PDF TT70S7Û IRF630 IRF631 IRF632 IRF633 IRF633 O-220 SEC irf630 IRF630 SEC for IRF630
IRFB30

Abstract: IRF632 17nF IRF 120A
Text: ) (Body Diode) IRF630.631 IRF632.633 IRF630.631 IRF632.633 IRF630.631 IRF632.633 ALL 9.0 8.0 36 32 2.0 1.8 , MICRO ELECTRONICS CORP 11E D bG^17ñfl 0000704 7 ^PRELIMINARY IRF630 IRF631 IRF632 IRF633 HIGH POWER MÖSFETs (APPLICATIO N S SWITCHING REGULATORS' · P « i Nuoto* IRFB30 MF631 IRF432 *03 , Voltage Type IRF630 IRF632 IRF631 IRF633 ALL ALL ALL ALL Min 200 150 2.0 Static Drain-Source On-State Resistance ( 2 ) IRF630 IRF631 IRF632 IRF633 IRF630 IRF631 IRF632 IRF633 gfs c iss ^oss c rss *d(on) V *d(OI


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PDF IRF630 IRF631 IRF632 IRF633 IRFB30 MF631 IRF432 17nF IRF 120A
f630

Abstract: IRF630 HEXFET TRANSISTORS F633 IRF632 IRFG31 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
Text: 100 50 OPERATION IN THIS: A R E A IS LIHITEO BY R0S 20 10 IRF630,1 - IRF632.3 K £ , , IRF631, IRF632 , IRF633 Devices Absolute Maximum Ratings Parameter Vds V d GR Id @ T c = 2 S ° C Id @ T , 9 .0 6 .0 36 ±20 INTERNATIONAL IRF632 200 200 8 .0 5 .0 32 m RECTIFIER IRF633 1 50 150 8 , Breakdown Voltage Type IR F630 IRF632 IRF631 IRF633 V c s ith ) IGSS 'g s s 'd s s Threshold Voltage G , Current (D IRF630 IRF631 IRF632 IRF633 RQS(on) Static Drain-Source O n-State Resistance © IR F630 IRF631


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PDF IRF63Q IRFG31 IRFB32 IRF633 TQ-220AB C-245 IRF630, IRF631, IRF632, IRF633 f630 IRF630 HEXFET TRANSISTORS F633 IRF632 alps 103 DIODE C244 mosfet f630
IRF632

Abstract: irf631 irf630
Text: MOTOROLA TECHNICAL DATA SEMICONDUCTOR IRF630 IRF631 IRF632 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S P ow er FETs are d esigned fo r lo w v o lta g e , h ig h speed p o w e r sw itch in g a p p lica tio n s such as s w itc h in g regu , } IRF630, IRF632 IRF631 Symbol Min I Max ] Unit V (BR)DSS 200 150 lDSS T J = 125;C) 'G , IRF632 'D io n ) IRF630, IRF631 IRF632 9FS IRF630, IRF631 IRF632 3 3 - - - S ta tic D ra in -S o u


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PDF IRF630 IRF631 IRF632 IRF630. IRF632
IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
Text: IRF610 IRF611 IRF612 IRF613 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 , IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 IRF710 IRF711 IRF712 IRF713 IRF720 IRF721 IRF722 IRF723 IRF730 , IRFP140 IRFP140 IRFP151 IRFP151 IRF520 IRF520 IRF633 IRF633 IRF632 IRF9532 IRF9532 IRF533 IRF533 , MTP10N05 MTP16N05A MTP6N60 SAMSUNG Direct Re placement IRF730 IRF633 IRF633 IRF632 IRF632 IRF643 IRF542 , IRF631 IRF632 IRF633 IRFP340 IRFP440 SIEMENS BUZ347 BUZ348 BUZ349 BUZ350 BUZ351 BUZ353 BUZ350 BUZ351


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PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF9613 fu120 buz11 cross reference 2SK309
irf 4110

Abstract: for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 SS-AT9 irf 1962 IRF631 IRF630
Text: IRF630 IRF631 IRF632 TM O S POWER FETs 8 and 9 AMPERES 'D S (on ) = 0.4 O HM 150 and 200 VOLTS D S (o n , Min Max U nit V(BR)DSS IRF630, IRF632 IRF631 'DSS 'g ssf 'g s s r -200 150 - Vdc mAdc 0.2 1 100 100 nAdc nAdc VGS(th) rDSfon( IRF630, IRF631 IRF632 'D(on) IRF630, IRF631 IRF632 9FS IRF630,1RF631 IRF632 2 4 Vdc Ohm ~ - 9 8 3 3 0.4 0.6 Adc - - mhos - -


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PDF IRF630 IRF631 IRF632 IRF630, IRF632 irf 4110 for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 SS-AT9 irf 1962
RTF6

Abstract: IRF632 IRF633 IRF632 ge
Text:  IRF632 ,633 8.0 AMPERES 200,150 VOLTS RDS(ON) = 0.6 n This series of N-Charinel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device rugged-ness and reliability. This design has been optimized to give superior performance , IRF632 IRF633 UNITS Drain-Source Voltage VDSS 200 150 Volts Drain-Gate Voltage, Rqs = 1Mil VDGR 200 150 , characteristics Drain-Source Breakdown Voltage IRF632 (Vqs = 0V, lD = 250 fjA) IRF633 bvqss 200 150 — â


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PDF IRF632 00A//Lisec, RTF6 IRF633 IRF632 ge
MOSFET IRF 630

Abstract: IRF630 f630 IRF630R 633R
Text: 150 -5 5 to +1 50 300 IRF632 IRF632R 200 200 8.0 5.0 32 ±20 75 0.6 32 150 -5 5 t o +150 300 , /631, IRF630R/631R IRF632 /633, IRF632R /633R Static Drain-Source On-State Resistance (Note 2) IRF630/631, IRF630R/631R IRF632 /633, IRF632R /633R Forward Transconductance (Note 2) Input Capacitance Output , , IRF632 , and IRF633 are n-channel enhancement-mode silicon-gate power field-effect transis tors. IRF630R, IRF631R, IRF632R and IRF633R types are advanced power MOSFETs designed, tested, and guaranteed to


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PDF IRF630R/631R/632R/633R IRF630, IRF631, IRF632, IRF633 IRF630R, IRF631R, IRF632R IRF633R MOSFET IRF 630 IRF630 f630 IRF630R 633R
irf 630

Abstract: ALL IRF 3.335t IRF642 IRF641 vn89af IRF633 IRF632 IRF631 IRF620
Text: MOSPOWER Selector GuiCte (Continued) NChonUe >1 MOSPOWER '(Continued) Breakdown ID Power Part Device Voltage Continuous Dissipation (Volts) (Ohms) (Amps) (Watts) Number 200 0.18 18.0 125 IRF640 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 , 1.2 6.25 VN35AB 1-12 Siliconix IRF230 ■IRF231 " IRF232 ■IRF233 IRF630 ■IRF631 ■IRF632 â , 0.4C2 9A IRF631 150 V TO-220AB IRF632 200V 0.6C2 8A IRF633 150 V GO-J^ S ABSOLUTE MAXIMUM


OCR Scan
PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 irf 630 ALL IRF 3.335t IRF642 IRF641 vn89af IRF633 IRF632 IRF631 IRF620
1RF630

Abstract: No abstract text available
Text: (0.063” {1,6mm) from case for 10s) IRF631 JRF631R IRF632 IRF632R IRF633 IRF633R UNITS , pA HA A A Vg s = 10V,Id = 5.0A - IRF632 /633, IRF632R /633R Forward Transconductance , €¢ Linear Transfer Characteristics • High Input Impedance D escription The IRF630, IRF631, IRF632 , , IRF631R, IRF632R and IRF633R types are advanced power MOSFETs designed, tested, and guaranteed to , ) 'GSS 'GSS Zero Gate Voltage Drain Current 'DSS 1RF632/633, IRF632R /633R Static Drain-Source


OCR Scan
PDF RF630/631/632/633 F630R /631R /632R /633R IRF630, IRF631, IRF632, IRF633 IRF630R, 1RF630
Equivalent IRF 44

Abstract: irf630 VN0108N2 vn0106n5 VN46 IRF632 IRF540 IRF522 IRF422 IRF240
Text: .10 TO-3 IRF540 100 0.085 BUZ 30 200 0.75 TO-220 IRF632 200 0.6 BUZ 31 200 0.20 TO-220 IRF640 200 0.18 , 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200 , Siliconix IRF230 ■IRF231 " IRF232 ■IRF233 IRF630 ■IRF631 ■IRF632 ■IRF633 N-Channel , 150 V TO-220AB IRF632 200V 0.6C2 8A IRF633 150 V GO-J^ S ABSOLUTE MAXIMUM RATINGS (Tc =


OCR Scan
PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 Equivalent IRF 44 irf630 VN0108N2 vn0106n5 VN46 IRF422 IRF240
Equivalent IRF 44

Abstract: sony 2sj54 irf 80 n VN0109N3 BUZ44 irf 44 n VN0108N2 2SJ54 VN0104N5 IRF232
Text: .10 TO-3 IRF540 100 0.085 BUZ 30 200 0.75 TO-220 IRF632 200 0.6 BUZ 31 200 0.20 TO-220 IRF640 200 0.18 , ? IRF230 ■IRF231 " IRF232 ■IRF233 IRF630 ■IRF631 ■IRF632 ■IRF633 N-Channel Enhancement Mode , -220AB IRF632 200V 0.6C2 8A IRF633 150 V GO-J^ S ABSOLUTE MAXIMUM RATINGS (Tc = Drain-Source Voltage


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PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 Equivalent IRF 44 sony 2sj54 irf 80 n VN0109N3 BUZ44 irf 44 n VN0108N2 2SJ54 VN0104N5 IRF232
IRF615

Abstract: No abstract text available
Text: POWER MOSFETs TO-220 NCHANNEL BVdss(V) 150.00 (Continued) RDS(onXQ) 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 3.00 2.00 1.50 1.10 0.68 0.45 0.34 0.28 5.00 3.60 2.50 1.80 1.50 1.00 0.80 0.55 5.00 3.60 2.50 1.80 1.50 1.00 0.80 0.55 Part Number IRL611 IRF613 IRF611 IRL621 IRF623 IRF621 IRL631 IRF633 IRF631 IRL641 IRF643 IRF641 IRL610 IRF612 IRF610 IRL620 IRF622 IRF620 IRL630 IRF632 IRF630 IRL640 IRF642 IRF640 IRF615 IRF614


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PDF O-220 IRL611 IRF613 IRF611 IRL621 IRF623 IRF621 IRL631 IRF633 IRF631 IRF615
irf630 equivalent

Abstract: MTM5N40 IVN6100TNU VN2410L "cross reference" VN0401D IVN6200CNM irf 150 equivalent IVN6200CNF IVN6200CNE IRF533
Text: IRF232 ■IRF233 IRF630 ■IRF631 ■IRF632 ■IRF633 N-Channel Enhancement Mode MOSPOWER 200V! s , -3 IRF232 200V 0.6Q 8A IRF233 150V IRF630 200V 0.4C2 9A IRF631 150 V TO-220AB IRF632 200V 0.6C2


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PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf630 equivalent MTM5N40 VN2410L "cross reference" IVN6200CNM irf 150 equivalent
irf630 equivalent

Abstract: irf630 irf640 IVN6200CNH IVN6200CNF IVN6200CNE IVN6200CND IVN6100TNU IRF533 Irf 630 mtm5n35
Text: IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200 1.2 4.0 40 IRF622 , IRF232 ■IRF233 IRF630 ■IRF631 ■IRF632 ■IRF633 N-Channel Enhancement Mode MOSPOWER 200V! s , -3 IRF232 200V 0.6Q 8A IRF233 150V IRF630 200V 0.4C2 9A IRF631 150 V TO-220AB IRF632 200V 0.6C2


OCR Scan
PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf630 equivalent irf630 irf640 IVN6200CNH Irf 630 mtm5n35
irf 630

Abstract: AAIJ VN5001A IRF452 IRF450 IRF442 IRF440 IRF432 IRF 635 IRF422
Text: IRF630 ■IRF631 ■IRF632 ■IRF633 N-Channel Enhancement Mode MOSPOWER 200V! s Siliconix , 8A IRF233 150V IRF630 200V 0.4C2 9A IRF631 150 V TO-220AB IRF632 200V 0.6C2 8A IRF633


OCR Scan
PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 irf 630 AAIJ VN5001A IRF452 IRF450 IRF442 IRF440 IRF432 IRF 635 IRF422
1RFP250

Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 IRFD311 IRF250 IRFD210 IRF331 irf220 IRF241
Text: 5.50 0.40 irff230 8 0.60 irf232 irf632 9 0.40 irf230 irf630 16 0.22 irf242 irf642 18


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PDF 000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 IRFD311 IRF250 IRFD210 IRF331 irf220 IRF241
1rf630

Abstract: rf630 IRF632R IRF630 HARRIS
Text: 6.0 36 ±20 75 0.6 36 150 -5 5 t o +150 300 IRF632 IRF632R 200 200 8.0 5.0 32 ±20 75 0.6 32 150 " 55 , , T j = + 1 25°C O n-State Drain Current (Note 2) IR F630/631, 1RF630R/631R IR F632/633, IRF632R /633R Static Drain-Source On-State Resistance (Note 2) IR F630/631, IRF630R/631R IRF632 /633, IRF632R /633R , The IRF630, IRF631, IRF632 , and IRF633 are n-channel enhancement-mode sllicon-gate power field-effect transis tors. IRF630R, IRF631R, IRF632R and IRF633R types are advanced power MOSFETs designed, tested, and


OCR Scan
PDF IRF630, IRF631, IRF632, IRF633 IRF630R, IRF631R, IRF632R IRF633R 1rf630 rf630 IRF630 HARRIS
2SJ54 sony

Abstract: VN0104N1 VN0108N2 VN0109n5 IRF822 IRF640 irf532 equivalent IRF540 IRF522 IRF422
Text: .10 TO-3 IRF540 100 0.085 BUZ 30 200 0.75 TO-220 IRF632 200 0.6 BUZ 31 200 0.20 TO-220 IRF640 200 0.18 , 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200


OCR Scan
PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 2SJ54 sony VN0104N1 VN0108N2 VN0109n5 IRF822 irf532 equivalent IRF422
irf630

Abstract: IRF230 12N20 f630 IRF630-633 IRF630 Fairchild IRF633 MTP12N18 MTP12N20 IRF230-233
Text: IRF632 IRF633 MTP12N18 MTP12N20 Product Summary Part Number Vdss ros (on) Id at Tc = 25°C Id at Tc , -220AB IRF631 150 V 0.40 n 9.0 A 6.0 A IRF632 200 V 0.50 n 8.0 A 5.0 A IRF633 150 V 0.50 ft 8.0 A 5.0 A


OCR Scan
PDF IRF230-233/IRF630-633 MTP12N18/12N20 TQ-204AA O-220AB IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 irf630 IRF230 12N20 f630 IRF630-633 IRF630 Fairchild IRF633 MTP12N18 MTP12N20 IRF230-233
irf540 equivalent

Abstract: IRF541 equivalent vn89af equivalent IRF540 irf640 vn0106n1 VN0109n5 IRF520 equivalent IRF240 IRF232
Text: .10 TO-3 IRF540 100 0.085 BUZ 30 200 0.75 TO-220 IRF632 200 0.6 BUZ 31 200 0.20 TO-220 IRF640 200 0.18 , 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200


OCR Scan
PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 irf540 equivalent IRF541 equivalent vn89af equivalent IRF540 vn0106n1 VN0109n5 IRF520 equivalent IRF240 IRF232
IRFZ25

Abstract: IRF512 IRF51 IRFZ42 IRFZ30
Text: n c A r c I Power MOSFETs Plastic Insertable Package TO-220 N-Channel Part Number IRFZ12 IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 IRFZ15 IRFZ14 IRFZ25 IRFZ24 IRFZ35 IRFZ34 IRFZ45 IRFZ44 IRF513 IRF511 IRF523 IRF521 IRF533 IRF531 IRF543 IRF541 IRF512 IRF510 IRF522 IRF520 IRF532 IRF530 IRF542 IRF540 IRF613 IRF611 IRF623 IRF621 IRF633 IRF631 IRF643 IRF641 IRF612 IRF610 IRF622 IRF620 IRF632 IRF630 IRF642 IRF640 IRF615 IRF614 IRF625 IRF624 1RF635 IRF634 IRF645 IRF644 IRF713 IRF711 IRF723 IRF721 IRF733


OCR Scan
PDF O-220 IRFZ12 IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 IRFZ15 IRFZ25 IRF512 IRF51
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