20N50A
Abstract: 20n50 IXGH20N50 f sss 20n60 sss 20n60
Contextual Info: 4686226 ' I X Y S CORP 03 DE I •-§tiñ b SEb □□□□5E4 T~ 3 T — t £ T 1~~ £} IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VOLTS M AXIM UM RATINGS Sym. IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 Unit Drain-Source Voltage 1) Vdss 500 600 Vdc
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ixgh20n50ixgm20n50ixgh20n60ixgm20n60+420n5020n50af sss 20n60sss 20n60
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20n50
Abstract: 20N50A IXGH20N50 c 20n50
Contextual Info: ' 4686226 I X Y S CORP 03 D E I 4hflbaEti ODDDSSM T • "” T~ 3 T —t £ o IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VO LTS M A X IM U M RA TIN G S Parameter IXGH20N50 IXGM20N50 Sym. Drain-Gate Voltage Rgs 1-OMii) (1) = 600 Vd g r 600 Vdc Vg s
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ixgh20n50ixgm20n50ixgh20n60ixgm20n60+320n5020n50ac 20n50
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TO210AC
Abstract: TO-210AC TO-238 IXGN75N60 IXGM20N100A IXGM40N50 IXGM40N50A IXGM30N60
Contextual Info: 4686226 I 03E 0 0 1 6 0 I. X Y S C O R P □3 X Y S CORp D ' 7 '“ 3 ^ - /3 D eT| 4t.fit.25b DDOOltiD T Power MOSIGBTs Part Number CollectorEmltter Voltage Vces Volts Continuous Pulsed Collector Current Collector Current Collectoi Emitter Fall Tc=25 °C
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ixgn75n100ixgn75n90ixgn75n80ixgn75n60+12ixgn75n50ixgm25n100aixgm20n100aixgm10n100aixgm25n90aixgm20n90ato210acto-210acto-238ixgm40n50ixgm40n50aixgm30n60
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IXGH30N50A
Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
Contextual Info: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses
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4bflb55bixgh30n50aixgh20n50aixgp10n50a+7ixgh20n50ixgh25n80aixgh40n60ixgp10n60aamp. mosfet 1000 wattixgh25n90aixgm30n60
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