TO210AC Search Results

thermafilm

Abstract: 2088AB thermasil EB107/D sync nut eb107 ierc heatsink richco Silicone Rubber 35 Shore A thermafilm 1 mhw 592
Contextual Info: AN1040/D Mounting Considerations For Power Semiconductors http://onsemi.com Prepared by: Bill Roehr APPLICATION NOTE INTRODUCTION Current and power ratings of semiconductors are inseparably linked to their thermal environment. Except for lead–mounted parts used at low currents, a heat exchanger

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

IXTH24N45

Contextual Info: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient

Diode SY 356

Abstract: DI 783
Contextual Info: I X Y S CORP IDE DI 4bflbS2b OGODBTS 3 | □IXYS 7 ^ 3 - r- a 7 ADVANCED TECHNICAL DATA SHEET* kTM MOSBLOC MAXIMUM RATIN G S DATASHEET NO. 41014A IGBT MODULE IXGQ 50N 90Y4 Te = 25 °C unless otherwise Indicated Conditions Rating Collector-Emitter Voltage

Contextual Info: I X Y S CORP 10E D | Mbfl taEb 0 0 0 0 3 T 7 7 | □IXYS ADVANCED TECHNICAL DATA SHEET* DATA SHEET NO. 41013A MOSBLOC IGBT MODULE IXGQ75N90Y4 MAXIMUM RATINGS T c = 25 °C unless otherwise indicated Conditions Rating Value Symbol Unit Collector-Emitter Voltage

Contextual Info: I X Y S CORP n i x Y 10 E D I 4batrS2b 0000307 4 | S ADVANCED TECHNICAL DATA SHEET* .TM M O SBLO C DATA SH EET NO. 41007C IXGQ50N60Y4 IG BT M O D U L E MAXIMUM RATINGS Tc = 25 °C unless otherwise indicated Conditions Rating Symbol Value Unit Collector-Emitter Voltage

MT 1198 AE

Abstract: 4bob M5Y4
Contextual Info: I X Y S IDE CORP D | HbflbÈSb 00003ÔT fl ~ r- 3 s r ^ J IXYS ADVANCED TECHNICAL DATA SHEET* „TM MOSBLOC DATA SHEET NO. 41006C IGBT MODULE IXGQ75N60Y4 MAXIMUM RATINGS Te = 25 °C unless otherwise Indicated Conditions Rating Collector-Emitter Voltage Symbol

P4855-1

Abstract: Ablestik Transistor Substitution 1993 2088AB belleville washer 33702 SIL-PAD density 208ab 2088a 814a
Contextual Info: Order this document by AN1040/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1040 MOUNTING CONSIDERATIONS FOR POWER SEMICONDUCTORS Prepared by: Bill Roehr Staff Consultant, Motorola Semiconductor Sector TABLE OF CONTENTS Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TRIAC zo 607 MA

Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Contextual Info: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’

15N60

Abstract: IXTM15N60
Contextual Info: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r

dioda by 238

Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching

IRFG1Z3

Abstract: IRFF9132 IRFF9133 IRFF9211 IRFF9212 IRFF9221 TO213AA IRFG1Z0
Contextual Info: - 260 - m s tt f ñ 1- Vd s or Vd g % % ± £ Vg s fë CTa=Z5íG Pd Id * /CH 3 I gss min n A ) Vg s (V ) - 5 .5 25 ± 100 ± 20 -60 ± 2 0 -5. 5 25 ± 100 ± 20 P -200 ± 2 0 - 1 .6 15 ± 100 P -150 ± 2 0 -1. 6 IR P -200 ± 2 0 IR P -150 ± 2 0 % (V )

IRFG1Z0

Abstract: irfh25 irfg9110 IRFH150
Contextual Info: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15

f g megamos

Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
Contextual Info: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested

mbab

Abstract: ixth17p25 ixtm17p25
Contextual Info: I ÎOE D 1 4bflhS2b GOODatiO 5 | X Y S CORP □ P-CHANNEL MOSFETS IX Y S IXTH17P25 IXTM17P25 ' M A X IM U M R A T IN G S P a ram eter Sym . IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 V Ds s 250 Vdc Drain-Gate Voltage (R q s = 1.0MÎ1) (1) Vdgr 250

40N25

Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
Contextual Info: I X Y S CORP ID E I D 4 L f l b 5 ab DD0 0 3 SÖ fl | □IXYS ' IXTH40N30, 25 IXTM40N30, 25 MAXIMUM RATINGS Parameter Sym. IXTH40N25 IXTM40N25 IXTH40N30 IXTM40N30 Unit Drain-Source Voltage 1 Voss 250 300 Mac Drain-Gate Voltage (Rqs = 1-OMii) (1) Vq 250 300

8051 servo motor interfacing

Abstract: rotary encoder signal conditioning 204AA 8051 microprocessor free Quadrature Encoder sampling rate 8051 internal structure incremental encoder Texas IXSE501
Contextual Info: l J U ‘f-’^ ^ ^ ^a^ÊSSÊBsKSÊÊiÊSÊÊÊKÊSâKKSÊÊÊÊÊBÎBBBBtlÊBÊSÊÊÊÊSÊ^ m i 005696 5 '4 % m m K ÈÊ l Ê Ê Im Ê Ê Ê Ê Ê IÊ Ê Ê Ê Ê Ê IB Ê Ê Ê Ê Ê Ê Ê m !ï X > ry IXSE501 Increm ental Shaft Encoder Peripheral Interface

35N25

Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Contextual Info: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

IXLD4429

Abstract: mosfet w1a CD 4081 Cmos 2 input and gate IC 1xys IXLD4425 TL494 IXLD1427 IXLD4424 mosfet gate 4081 IXLD427CPA
Contextual Info: □IXYS IXLD426/427/428 Dual Power MOSFET Driver • Low Power Latch Resistant CMOS • 30 ns Rise Time General Description Features The IX L D 4 2 6 /4 2 7 /4 2 8 are dual C M O S high speed drivers. A T T L /C M O S in p u t voltage level is tra n sla te d in to an o u tp u t

50N15

Abstract: TL 1074 CT megamos 46 08 09 6 megamos 48 ixth50n20 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet
Contextual Info: IDE D I 4bfibE5b □ 0 0 D 3 b 5 0 | I X Y S CORP — ~ r 73 f ^ / s / ^ □ I X Y S IXTH50N20, 15 IXTM50N20, 15 MAXIMUM RATINGS Sym . IXTH50N15 IXTM 50N15 IXTH50N20 IXTM 50N 20 Drain-Source Voltage 1 Vd s s 150 200 Vdc Drain-Gate Voltage (R g s = 1-OMft) (1)

carrier chiller

Abstract: BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook
Contextual Info: CASERM/D Rev. 0, Sep-2000 Semiconductor Packaging and Case Outlines ON Semiconductor Reference Manual and Design Guide Semiconductor Packaging and Case Outlines Reference Manual and Design Guide CASERM/D Rev. 0, Sep–2000  SCILLC, 2000 “All Rights Reserved’’

f g megamos

Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Contextual Info: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested

MT 1198 AE

Contextual Info: I X Y S CÔRD ID E DIXYS ADVANCED TECHNICAL DATA SH EET* D | 4töt,?21n □ □ 0037ci S | DATA SHEET NO. 4I011B IXGQ50N50Y4 MOSBLOC IGBT MODULE MAXIMUM RATINGS Tc = 25 °C unless otherwise Indicated Unit Symbol Value Collector-Emitter Voltage VcES 500

TO210AC

Abstract: TO-210AC TO-238 IXGN75N60 IXGM20N100A IXGM40N50 IXGM40N50A IXGM30N60
Contextual Info: 4686226 I 03E 0 0 1 6 0 I. X Y S C O R P □3 X Y S CORp D ' 7 '“ 3 ^ - /3 D eT| 4t.fit.25b DDOOltiD T Power MOSIGBTs Part Number CollectorEmltter Voltage Vces Volts Continuous Pulsed Collector Current Collector Current Collectoi Emitter Fall Tc=25 °C