50N15
Abstract: TL 1074 CT megamos 46 08 09 6 megamos 48 ixth50n20 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet
Contextual Info: IDE D I 4bfibE5b □ 0 0 D 3 b 5 0 | I X Y S CORP — ~ r 73 f ^ / s / ^ □ I X Y S IXTH50N20, 15 IXTM50N20, 15 MAXIMUM RATINGS Sym . IXTH50N15 IXTM 50N15 IXTH50N20 IXTM 50N 20 Drain-Source Voltage 1 Vd s s 150 200 Vdc Drain-Gate Voltage (R g s = 1-OMft) (1)
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ixth50n15ixth50n20ixtm50n15ixtm50n20+1100d3b550-200v50n15tl 1074 ctmegamos 46 08 09 6megamos 48f g megamos00d0350n20id 48 megamosa 1712 mosfet
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50N20
Abstract: 42N20 IXTH42N20
Contextual Info: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200
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ixth/ixtm42n20ixth/ixtm50n2042n2050n20+3o-204o-247ixth42n20
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42n20
Abstract: 50n20 to-204ae ups 017 isolated nm 232
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM42N20 IXTH/IXTM50N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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ixth/ixtm42n20ixth/ixtm50n20o-24742n20+550n20o-204to-204aeups 017isolated nm 232
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Irfp250 irfp460
Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)
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o-204o-264isoplus247o-220+16o-252o-247o-268isoplus220o-263ot-227birfp250 irfp460ixta3n12036p10irfp450 bridgen503irfp460 complementaryixth30n25ixth48n15ixth12n100q16p20
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SHD239608
Abstract: shd239606
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM
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o-254o-257shd226413shd226401+8shd226402shd226403shd226404shd226405shd226406shd226407shd239608shd239606
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megamos
Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4
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o-204o-247megamosf g megamos+8megamos 48id 48 megamosmegamos 13ixth40n25ixth12n95ixth12n100ixth26n50ixth11n95
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IXFM50N20
Abstract: IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413
Contextual Info: POWER MOSFETS HERMETIC POWER MOSFETs N-CHANNEL, SURFACE MOUNT TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V BR DSS Volts SHD218413 30 SHD2181 60 SHD2182 100 SHD2183 200 SHD2184 400 SHD2185 500 SHD2186 800 SHD2187 900 SHD2188 1000 SHD218413A 30 SHD2181A 60
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shd218413shd2181shd2182shd2183+11shd2184shd2185shd2186shd2187shd2188shd218413aixfm50n20irf9140shd239508shd239613shd2181a
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d2s diode
Abstract: IXTH50N20
Contextual Info: aixYS MegaMOS FET IXTH/IXTM 50N20 VDSS lD25 = 200 V = 50 A ^D S on = ^ N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS T j =25°C to150°C 200 V V oor T J = 25° C to 150° C; RQS= 1 Mi2 200 V Vos vt g s m Continuous +20 V Transient
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50n20to150o-247t0-204+3ixtm50n20d2s diodeixth50n20
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buz350 mosfet
Abstract: DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Clsa Max (V) Max JF) tr Max (s) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 IAFJ240 BUZ37 BUZ31 BUZ34
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2100p1800piafj240buz37+15buz31buz34ixtl15n20mth15n20mtm15n20buz350 mosfetdvd120tefm1394m160sot23 34n2n6960dvd020smth30n2020/sgsp577efm139mte60n20
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*2393n
Abstract: D2199 IRF9140 2184b d2186 2188a d2188
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC POWER MOSFETs N -C H A N N E L . T O -2 5 4 . T O -2 5 7 TYPE NUM BER DRAIN TO SO URCE BREAKDO W N VOLTAGE CO NTINUO US DRAIN CURRENT M AXIM UM POWER DISSIPATION •d PD V (BR)DSS STATIC
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shd2261shd2262shd2263shd2264+11shd2265shd2266shd2268irfy0442393nd2199irf91402184bd21862188ad2188
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