IXGE Search Results

200n60

Abstract: robot control
Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

Contextual Info: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient

Contextual Info: IXGE50N60Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)600 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

200n60

Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat = 600 V = 175 A = 2.1 V E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

Contextual Info: IXGE75N80Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)800 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

Contextual Info: IXGE75N100Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

Contextual Info: IXGE50N90Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)900 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

Contextual Info: IXGE50N80Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)800 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

Contextual Info: IXGE75N50Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)500 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

200N60B

Abstract: 200n60 IXGN200N60B SOT227B package SOT227B 123B16
Contextual Info: HiPerFASTTM IGBT IXGE 200N60B E Symbol Test Conditions VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns ISOPLUS 227TM (IXGE) Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient

Contextual Info: IXGE50N50Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)500 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

Contextual Info: IXGE50N100Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

Contextual Info: IXGE75N60Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)600 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

Contextual Info: IXGE75N90Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)900 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

f g megamos

Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
Contextual Info: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested

f g megamos

Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Contextual Info: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested

led 7 doan

Abstract: sla 6102 LT 8521 lg 7607 DB82 JL - 012C Z8000 8C08 5252 F 0906 LT 210D
Contextual Info: Advanced Micro Computers A subsidiary of Advanced Micro D evices A m 96/4016 Evaluation Board Monitor Listing REVISION RECORD REVISION A DESCRIPTION In itial Is s u e 1 2 /3 /7 9 B S e c o n d P rin tin g ( 1 /7 /8 0 ) Publication No. 0 0 6801 46 Address com m ents concerning

Contextual Info: Bulletin 127503 08/97 International MT.KB SERIES IÖR Rectifier THREE PHASE CONTROLLED BRIDGE Features • Package fully com patible with the industry standard INT-A-pak pow er m odules series ■ High therm al conductivity package, electrically insulated case

b342d

Abstract: information applikation applikation heft mikroelektronik Heft 12 information applikation mikroelektronik Transistoren DDR VEB mikroelektronik "information applikation" mikroelektronik Heft 10 ITT transistoren
Contextual Info: m n t k if ^ s j e le lK t e n a r iH - c g|B Information Applikation in n f B = a n iis ö lH W b n a n lK Information Applikation Heft: 28 Transistorarrays Iweb Halbleiterwerk frankfurt/oder | betrieb im veto kombinet mikroelektronik KAMMER DER TECHNIK Bezirksvorstand Frankfurt/O.