200N60B Search Results
200N60B Price and Stock
IXYS Corporation IXXN200N60B3H1Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W |
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IXXN200N60B3H1 | 1 |
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IXXN200N60B3H1 | Tube | 300 |
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IXYS Corporation MMIX1X200N60B3Transistor: IGBT; BiMOSFET™; 600V; 120A; 625W; SMPD |
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MMIX1X200N60B3 | 1 |
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MMIX1X200N60B3 |
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MMIX1X200N60B3 | 17 | 1 |
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IXYS Corporation IXXN200N60B3Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B |
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IXXN200N60B3 | 1 |
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IXXN200N60B3 |
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IXXN200N60B3 | Tube | 300 |
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IXYS Corporation IXXX200N60B3Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; PLUS247™ |
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IXXX200N60B3 | 1 |
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IXXX200N60B3 |
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IXXX200N60B3 | Tube | 300 |
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IXYS Corporation MMIX1X200N60B3H1Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD |
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MMIX1X200N60B3H1 | 1 |
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200N60B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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200n60
Abstract: robot control
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200n60b160ns227tm728b1+2 | |
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Contextual Info: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient |
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200n60b160ns227tmixgn200n60b+1 | |
200n60Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat = 600 V = 175 A = 2.1 V E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous |
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200n60b227tm25crease728b1+1 | |
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Contextual Info: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient |
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200n60bot-227b | |
200n60
Abstract: IXGN200N60B robot control RG200
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200n60bot-227b728b1200n60+3 | |
200N60B
Abstract: 200n60 IXGN200N60B SOT227B package SOT227B 123B16
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200n60b160ns227tmixgn200n60b+5 | |
200N60B
Abstract: 200n60
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200n60bot-227b200n60 | |
200n60Contextual Info: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V Transient ±30 |
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200n60bot-227b200n60 | |
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Contextual Info: HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30 V IC25 TC = 25°C 200 A IL Terminal Current Limit |
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200n60bot-227b | |
ci 555
Abstract: ci555 C.I.555
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OCR Scan |
200n60bot-227b150ecci 555+2 | |
200n60Contextual Info: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V Transient ±30 |
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200n60bot-227b200n60 | |
120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
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OCR Scan |
o-220o-263o-24728n30+16 | |
200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
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plus24720n3028n3030n30+15 | |
7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
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axc-051axc-053axc-101axc-102+16 | |
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
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o-220o-263o-247plus247+15 | |