N60C Search Results

N60C Datasheets (5)

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Part	Manufacturer	Description	Datasheet Type	PDF
SLF10N60C	Maplesemi	10A, 600V N-channel MOSFET with typ. RDS(on) of 0.62 ohm at VGS = 10V, low gate charge of 36.5nC, high ruggedness, fast switching, 100% avalanche tested, suitable for high-efficiency power supplies and active PFC applications.	Original	PDF
G20-06DN-60C-1068	Wenzhou Gangyuan Electronics Co Ltd	Microswitch with operating temperature range of -25°C to +125°C, rated for 6A at 125/250V AC, contact resistance ≤200mΩ, and mechanical life of 1,000,000 cycles.	Original	PDF
SLF5N60C	Maplesemi	600V N-Channel MOSFET with 4.5A continuous drain current, 2.0 ohm typical RDS(on) at VGS = 10V, low gate charge of 16nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications.	Original	PDF
SLF12N60C	Maplesemi	12.0A, 600V N-channel MOSFET with RDS(on) of 0.51 ohm at VGS = 10V, low gate charge of 44.7nC, high ruggedness, fast switching, 100% avalanche tested, suitable for high efficiency power supplies and active power factor correction.	Original	PDF
SLF8N60C	Maplesemi	600V N-Channel MOSFET with 7.5A continuous drain current, 1.0 ohm typical RDS(on) at VGS = 10V, low gate charge of 29nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications.	Original	PDF

N60C Price and Stock

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Infineon Technologies AG


Infineon Technologies AG SPB20N60C3 Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPB20N60C3		676		1	1 $3.70 10 $3.27 100 $2.74 1000 $2.55 10000 $2.55	Buy Now
ComSIT USA	SPB20N60C3		1,241			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPA07N60C3 Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPA07N60C3		148		1	1 $1.60 10 $1.25 100 $0.74 1000 $0.74 10000 $0.74	Buy Now
Infineon Technologies AG AIKW20N60CTXKSA1 Transistor: IGBT; 600V; 20A; 166W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	AIKW20N60CTXKSA1				1	1 $6.45 10 $6.45 100 $4.17 1000 $3.25 10000 $3.25	Get Quote
Rochester Electronics	AIKW20N60CTXKSA1		10,540		1	1 - 10 - 100 $2.69 1000 $2.41 10000 $2.26	Buy Now
EBV Elektronik	AIKW20N60CTXKSA1			40 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	AIKW20N60CTXKSA1		10,132			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPB20N60C3ATMA1 Transistor: N-MOSFET
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TME	SPB20N60C3ATMA1				1,000	1 - 10 - 100 - 1000 $1.62 10000 $1.62	Get Quote
Rutronik	SPB20N60C3ATMA1	Tape & Reel	2,000		1,000	1 - 10 - 100 - 1000 $1.63 10000 $1.26	Buy Now
EBV Elektronik	SPB20N60C3ATMA1		149,000	16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPA07N60C3XKSA1 Transistor: N-MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPA07N60C3XKSA1				50	1 - 10 - 100 $0.90 1000 $0.82 10000 $0.82	Get Quote

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N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DIXYS ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 N60CD1 IXST 30 N60CD1 V CES I Short Circuit SOA Capability 600 V 55 A C25 V C E sat 2.5 V t fi 70 ns TO-247AD (IXSH) Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C	OCR Scan	n60cd1 ixsk30n60cd1 o-247ad	PDF
IXSH30N60CD1 Abstract: IXSK30N60CD1 IXST30N60CD1 Contextual Info: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR	Original	n60cd1 o-247ad ixsh30n60cd1 ixsk30n60cd1 +1ixst30n60cd1	PDF
n60c Abstract: ci lm 317 Contextual Info: 0IXYS ADVANCEDTECHNICALINFORMATION High Speed IGBT with Diode N60CD1 N60CD1 IXST30 N60CD1 CES ^C25 VCE sat t fi Short Circuit SOA Capability 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings 600 V vCGR 600 V VGES vGEM	OCR Scan	ixsh30n60cd1 ixsk30n60cd1 ixst30 n60cd1 +6o-247ad cto150 o-268 o-264 n60c ci lm 317	PDF
n60c Abstract: IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 TO-264 Jedec package outline N60CD1 Contextual Info: ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 V CES I C25 V CE sat t fi Short Circuit SOA Capability = = = = 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	n60cd1 o-247ad 150oc n60c +4ixsh30n60cd1 ixsk30n60cd1 ixst30n60cd1 to-264 jedec package outline	PDF
Contextual Info: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR	Original	n60cd1 o-247ad o-264 o-268 +1o-268aa	PDF
N60C3 Abstract: SPP03N60C3 Contextual Info: 6331& 63$1& &RRO026 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax 9 5'6 RQ Ω ,' $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\	Original	p-to220-3-31 sp000216296 n60c3 spp03n60c3 +4spa03n60c3 pg-to220-3-1 pg-to220-3-21 pg-to220-3-31/3-111	PDF
3G72-31 Contextual Info: 6331& 63$1& &RRO026 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax 9 5'6 RQ Ω ,' $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72-31 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\	Original	rro026 p-to220-3-31 3g72-31 sp000216296	PDF
Contextual Info: 6331& 63$1& &RRO026 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax 9 5'6 RQ Ω ,' $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\	Original	rro026 p-to220-3-31 3g72fp sp000216296	PDF
k1117 Abstract: R36W power transistor k1821 L46R k1518 k1117 transistor k2225 transistor k2225 k1317 transistor k1317 Contextual Info: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by: Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Schematic Information The kit contains representative input and output schematics, netlists, and waveform used for the ECLinPS	Original	and8009/d k1117 r36w power transistor k1821 +7l46r k1518 k1117 transistor k2225 transistor k2225 k1317 transistor k1317	PDF
n60c Abstract: NA60 NA60 resistor Rn65d resistor na65 10 resistor NE55 RN60D N55D Resistors NC55 dale rn60c Contextual Info: MODELS NE, NC, CT, NA Metal Film Resistors Military, MIL-R-10509, Qualified, Type RN, Precision FEATURES • Low noise and low inductance characteristics • Blue epoxy encapsulation over moisture resistant polyimide varnish undercoat • Special marking available	OCR Scan	mil-r-10509 100ppm/mil-std-1276 rn50ff +1350ppm/-c 500pp 100ppm n60c na60 na60 resistor rn65d resistor na65 10 resistor ne55 rn60d n55d resistors nc55 dale rn60c	PDF
R36W Abstract: k1420 N52C N38C l46r k0114 N53C transistor k1117 k2225 transistor transistors k2628 Contextual Info: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information	Original	and8009/d r14525 r36w k1420 +8n52c n38c l46r k0114 n53c transistor k1117 k2225 transistor transistors k2628	PDF
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	plus247 20n30 28n30 30n30 +1540n30 31n60 38n60 41n60 60n60 o-264 200n60 n60c 50n60 7n60b ic igbt 25n120 ic600 80n60 60n60 igbt 25n120	PDF
R87c196 Contextual Info: I N TE L CO RP 31E D UP/PRPHLS in te l • 40Sbl?S, 00=11535 4 ■ IPKUyiüfflOMÄKy T - 4 9 - l% jÇ > 87C196KB/83C196KB/80C196KB 16-BIT HIGH PERFORMANCE CHMOS MICROCONTROLLER 87C196KB — 8 Kbytes of On-Chip EPROM 83C196KB — 8 Kbytes of Factory Mask-Programmed ROM	OCR Scan	40sbl 87c196kb/83c196kb/80c196kb 16-bit 87c196kb +483c196kb 80c196kb sources/16 r87c196	PDF
k2324 Abstract: k1821 k2225 k1317 power transistor k1821 k1213 k1117 k0313 k2225 transistor N13R Contextual Info: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by: Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Schematic Information The kit contains representative input and output schematics, netlists, and waveform used for the ECLinPS	Original	and8009/d c0203 k0204 k0204wb +13l01wb l02wb l03wb k2324 k1821 k2225 k1317 power transistor k1821 k1213 k1117 k0313 k2225 transistor n13r	PDF

40n60 igbt Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263	Original	o-220 o-263 o-247 16n60 +14b1-10 24n60 30n60 40n60 40n60 igbt 35n120u1 b1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35n120u1 igbt equivalent to 40n60 80n60	PDF
N60C3 Abstract: SP000216296 n60c P-TO-220-3-31 Contextual Info: 6331& 63$1& &RRO026 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax 9 5'6 RQ Ω ,' $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\	Original	p-to220-3-31 sp000216296 n60c3 spp03n60c3 +6spa03n60c3 pg-to220-3-1 pg-to220-3-21 pg-to220-3-31/3-111 n60c p-to-220-3-31	PDF
IN34A Abstract: 1N60C IN82A IN67A in69a IN56A 1n62 diode IN34 diode 1N142 diode diode IN97 Contextual Info: Iñ DE I b l E E m ? ? D D 0 D D 7 D 4 612 24 77 MICR OWA VE DIODE CORP 18C 0 0 0 7 0 D T - Of ón CROWAVE DIODE CORPORATION . GERMANIUM DIODES r . J r JN34 1N34 4AS A IN3 1 N 3 5 IN38 1N38A 1 N3 1N 4SB 8 1 1N N5 510 1 1N N5S2 2A 1 1N N5 54 4A 1N56 IN5 6 A	OCR Scan	deible2477 1n34a in34as 1n38a +151n52a 1n54a in56a 1n5836a 1n127 1n127a in34a 1n60c in82a in67a in69a 1n62 diode in34 diode 1n142 diode diode in97	PDF
SP000216296 Contextual Info: 6331& 63$1& &RRO026 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax 9 5'6 RQ Ω ,' $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\	Original	rro026 p-to220-3-31 sp000216296	PDF

N60C Search Results

N60C Datasheets (5)

N60C Price and Stock

Infineon Technologies AG SPB20N60C3

Infineon Technologies AG SPA07N60C3

Infineon Technologies AG AIKW20N60CTXKSA1

Infineon Technologies AG SPB20N60C3ATMA1

Infineon Technologies AG SPA07N60C3XKSA1

N60C Datasheets Context Search

IXSH30N60CD1

n60c

n60c

N60C3

3G72-31

k1117

n60c

R36W

200n60

R87c196

k2324

40n60 igbt

N60C3

IN34A

SP000216296