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    1N60C Search Results

    1N60C Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    1N60C
    Unknown GE Transistor Specifications Scan PDF 25.64KB 1
    1N60C
    Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 121.74KB 1
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    1N60C Price and Stock

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    onsemi FQT1N60CTF-WS

    MOSFET N-CH 600V 200MA SOT223-4
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    onsemi FQN1N60CTA

    MOSFET N-CH 600V 300MA TO92-3
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    DigiKey () FQN1N60CTA Cut Tape 15,577 1
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    FQN1N60CTA Ammo Pack 14,000 2,000
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    Infineon Technologies AG SPB11N60C3ATMA1

    MOSFET N-CH 650V 11A TO263-3
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    DigiKey () SPB11N60C3ATMA1 Cut Tape 1,157 1
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    Infineon Technologies AG SPP11N60C3XKSA1

    MOSFET N-CH 650V 11A TO220-3
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    Infineon Technologies AG SPA11N60C3XKSA1

    MOSFET N-CH 600V 11A TO220-3
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    1N60C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original
    2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    Contextual Info: 1N60C N-Channel QFET MOSFET 600 V, 0.30 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to


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    FQN1N60C PDF

    1N60C

    Abstract: *1N60C
    Contextual Info: FQN1N0C N-Channel QFET MOSFET 00 V, 0.3 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original
    FQN1N60C 1N60C *1N60C PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    1N60C

    Abstract: FQN1N60CTA 11N60C D 92 M - 03 DIODE
    Contextual Info: 1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQN1N60C FQN1N60C O-92-3 FQN1N60CBU FQN1N60CTA 1N60C 11N60C D 92 M - 03 DIODE PDF

    1N60C

    Abstract: FQN1N60C
    Contextual Info: 1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQN1N60C 1N60C FQN1N60C PDF

    Contextual Info: 1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQN1N60C PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    1N60C

    Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
    Contextual Info: 1N60C / 1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQD1N60C FQU1N60C O-252 FQD1N60CTF FQD1N60CTM 1N60C FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 PDF

    1N60C

    Abstract: FQN1N60C
    Contextual Info: 1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQN1N60C FQN1N60C 1N60C PDF

    Contextual Info: 3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified


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    3VD182600YL 3VD182600YL O-92DT-3L 1N60C. 250uA 250uA PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF