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1N60C Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
1N60C		Unknown	GE Transistor Specifications	Scan	PDF	25.64KB	1
1N60C		Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	121.74KB	1

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Infineon Technologies AG SPP11N60C3XKSA1 - Rail/Tube (Alt: SPP11N60C3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPP11N60C3XKSA1	Tube	450		500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	SPP11N60C3XKSA1	Bulk	230		1	1 $4.00 10 $2.26 100 $2.09 1000 $1.85 10000 $1.75	Buy Now
Rochester Electronics	SPP11N60C3XKSA1		240		1	1 - 10 - 100 $1.55 1000 $1.29 10000 $1.15	Buy Now
TME	SPP11N60C3XKSA1		21		1	1 $3.23 10 $1.89 100 $1.50 1000 $1.28 10000 $1.22	Buy Now
EBV Elektronik	SPP11N60C3XKSA1			51 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Vyrian	SPP11N60C3XKSA1		7,672			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi FQN1N60CTA - Ammo Pack (Alt: FQN1N60CTA)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FQN1N60CTA	Ammo Pack			6,000	1 - 10 - 100 - 1000 - 10000 $0.12	Get Quote
Flip Electronics	FQN1N60CTA		10,680			1 $0.09 10 $0.09 100 $0.09 1000 $0.09 10000 $0.09	Get Quote
Maritex	FQN1N60CTA		25		1	1 $0.78 10 $0.62 100 $0.42 1000 $0.37 10000 $0.37	Buy Now
onsemi FQU1N60CTU Power MOSFET, N-Channel, QFET?, 600 V, 1 A, 11.5 ?, IPAK - Rail/Tube (Alt: FQU1N60CTU)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FQU1N60CTU	Tube			3,850	1 - 10 - 100 - 1000 - 10000 $0.21	Get Quote
Rochester Electronics	FQU1N60CTU		8,110		1	1 - 10 - 100 $0.29 1000 $0.24 10000 $0.21	Buy Now
TME	FQU1N60CTU				1	1 $0.85 10 $0.53 100 $0.35 1000 $0.30 10000 $0.30	Get Quote
Flip Electronics	FQU1N60CTU		2,320			1 $0.13 10 $0.13 100 $0.13 1000 $0.13 10000 $0.13	Get Quote
onsemi FQN1N60CTA-G - Ammo Pack (Alt: FQN1N60CTA-G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FQN1N60CTA-G	Ammo Pack			6,000	1 - 10 - 100 - 1000 - 10000 $0.18	Get Quote
Rochester Electronics	FQN1N60CTA-G		119,446		1	1 - 10 - 100 $0.24 1000 $0.20 10000 $0.18	Buy Now
Flip Electronics	FQN1N60CTA-G		1,454			1 $0.11 10 $0.11 100 $0.11 1000 $0.11 10000 $0.11	Get Quote
Infineon Technologies AG SPB11N60C3ATMA1 - Bulk (Alt: 47W3752)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SPB11N60C3ATMA1	Bulk			1	1 $4.62 10 $3.05 100 $2.15 1000 $1.84 10000 $1.84	Get Quote
	SPB11N60C3ATMA1	Tape & Reel		8 Weeks	1,000	1 - 10 - 100 - 1000 $0.77 10000 $0.76	Buy Now
Newark	SPB11N60C3ATMA1	Bulk	1,278		1	1 $4.62 10 $3.05 100 $2.15 1000 $1.84 10000 $1.84	Buy Now
Rochester Electronics	SPB11N60C3ATMA1		300		1	1 - 10 - 100 $1.50 1000 $1.34 10000 $1.26	Buy Now
TME	SPB11N60C3ATMA1				1,000	1 - 10 - 100 - 1000 $1.50 10000 $1.32	Get Quote
EBV Elektronik	SPB11N60C3ATMA1			9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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1N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	ic hxj 2038 1n52398 db5t tfk 102 cny 70 +6hxj 2038 rca 40361 transistor rca 40362 tfk 680 cny 70 diode equivalent 1n34a 2n5952 equivalent	PDF
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	2n7000 2n7000a 2n7000k 70max +1345max 55max 80max 9n90c 9n50c igbt 20n50 kmb*050n60p 7n65c 5n50c smd diode s4 58a 2n60c 2n60 mosfet smps str tv smps	PDF
Contextual Info: 1N60C N-Channel QFET MOSFET 600 V, 0.30 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to	Original	fqn1n60c	PDF
1N60C Abstract: *1N60C Contextual Info: FQN1N0C N-Channel QFET MOSFET 00 V, 0.3 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce	Original	fqn1n60c 1n60c	PDF
Tr431 Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 700 21012 AA200	OCR Scan	25t12 z1012 z1014 z1018 +16aa138 aa140 aa142 aa200 aa21q aa300 tr431 1n1525 cs1256hg bsf17 dd04 18db6a b1274 transistor 1n34a mp lt236 sn76	PDF
1N60C Abstract: FQN1N60CTA 11N60C D 92 M - 03 DIODE Contextual Info: 1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	fqn1n60c o-92-3 fqn1n60cbu fqn1n60cta +31n60c 11n60c d 92 m - 03 diode	PDF
1N60C Abstract: FQN1N60C Contextual Info: 1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	fqn1n60c 1n60c	PDF
Contextual Info: 1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	fqn1n60c	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186j lg color tv circuit diagram schematics free transistor equivalent book 2sc npn transistors list according to current, voltag +7rca sk cross-reference kia 4318 transistor cs 9012 til 322a sx3704 diode d.a.t.a. book 1n1007	PDF
1N60C Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM Contextual Info: 1N60C / 1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	fqd1n60c fqu1n60c o-252 fqd1n60ctf +6fqd1n60ctm 1n60c fairchild fqd dpak dpak-2 package pspice orcad 1n60	PDF
1N60C Abstract: FQN1N60C Contextual Info: 1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	fqn1n60c 1n60c	PDF
Contextual Info: 3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified	Original	3vd182600yl o-92dt-3l 1n60c 250ua	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	1n6227 silec gg 84 1n623 +62g300 chn 543 ic hxj 2038 1n52398 in5240 1n48 zener diode	PDF

1N60C Search Results

1N60C Datasheets (2)

1N60C Price and Stock

Infineon Technologies AG SPP11N60C3XKSA1

onsemi FQN1N60CTA

onsemi FQU1N60CTU

onsemi FQN1N60CTA-G

Infineon Technologies AG SPB11N60C3ATMA1

1N60C Datasheets Context Search

IC HXJ 2038

9n90c

1N60C

Tr431

1N60C

1N60C

LG color tv Circuit Diagram schematics

1N60C

1N60C

1N6227