20N50 Search Results

ssh20n50

Abstract: ssm20n45 20N45 2on50 20n50
Contextual Info: D E j ? ci b m 4 2 000S3Û7 1 | : N-CHÂNNEL * POWER MOSFETS ? / \ -fó SAMSUNG SE MI CO NDUCT OR INC 2 SSM20N45/20N50 SSH20N45/20N50 ’ •> f Preliminary Specifications PRODUCT SUMMARY 500 Volt, 0.3 Ohm SFET V ds RoS on Id SSM20N45 450V 0.3 0 20A 20N50

Contextual Info: RFP-20N50TP Aluminum Nitride Termination VER3/19/01 Description: RFP-20N50TP Features: o 1kHz -3.0 GHz o 20 Watts o Aluminum Nitride AlN ceramic o Welded Silver leads o Non-Nicrome resistive element o Low VSWR o 100% Tested The RFP-20N50TP is a general purpose 20 Watt termination

Contextual Info: Advance Technical Information VDSS = 500 V = 20 A ID25 RDS on = 0.33 Ω IXTH 20N50D High Voltage MOSFET N-Channel, Depletion Mode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

20n50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N50 Preliminary Power MOSFET 20A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current,

20n50

Contextual Info: N-CHANNEL POWER MOSFETS SSH20N45/20N50 FEATURES • • • • • • • TO-3P L o w e r R d s o n Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e

20N50

Abstract: ssh20n50 c 20n50 SSH20N45 20N50 MOSFET SSH20N45/20N50
Contextual Info: N-CHANNEL POWER MOSFETS SSH20N45/20N50 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: RFP-20N50TPC Aluminum Nitride Termination VER3/19/01 Description: The RFP-20N50TPC is a general purpose 20 Watt termination constructed on an Aluminum Nitride AlN ceramic substrate for use in high power RF/microwave amplifiers and related products. The AlN

20N50D

Abstract: 20n50
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode VDSS = 500 V = 20 A ID25 RDS on = 0.33 Ω IXTH 20N50D IXTT 20N50D Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS

8n50e

Abstract: 20n50e MC34262 P3657A PT4215 14N5 SG-35 14N50 MC34262D MC332
Contextual Info: MC34262, MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off−line power converter applications. These integrated circuits feature an internal startup timer for stand−alone applications,

MC33262

Abstract: P3657-A 14n50e MC34262 8n50e MOSFET 20n50e EE-42 JESD22-A114-F ac step-up transformer winding awg boost uc3842 application note
Contextual Info: MC34262, MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off−line power converter applications. These integrated circuits feature an internal startup timer for stand−alone applications,

8n50e

Contextual Info: Integrate Circuit SMD Type Power Factor Controllers MC34262 • Features SOP-8 ● Overvoltage Comparator Eliminates Runaway Output Voltage ● Internal Startup Timer ● One Quadrant Multiplier ● Zero Current Detector ● Trimmed 2% Internal Bandgap Reference

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

20N50A

Abstract: 20n50 IXGH20N50 f sss 20n60 sss 20n60
Contextual Info: 4686226 ' I X Y S CORP 03 DE I •-§tiñ b SEb □□□□5E4 T~ 3 T — t £ T 1~~ £} 20N50, 60 20N50, 60 20 A M PS, 5 0 0 -6 0 0 VOLTS M AXIM UM RATINGS Sym. 20N50 20N50 IXGH20N60 IXGM20N60 Unit Drain-Source Voltage 1) Vdss 500 600 Vdc

IGT4E10

Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
Contextual Info: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s

6N60E

Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
Contextual Info: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218

8N50E

Abstract: 8N50 20n50e motorola 20n50e mc34262 MOSFET 20n50e P3657A EE-42 MC33262 MC33262D
Contextual Info: Order this document by MC34262/D MC34262 MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications. These integrated circuits feature an internal startup

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

VAC 4021

Abstract: 14n50e JESD22-A114-F JESD78 MC33262 MC34262 SG3561 TDA4817 230V dc variable speed control pwm P3657-A
Contextual Info: MC34262, MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off- line power converter applications. These integrated circuits feature an internal startup timer for stand- alone applications,

mc34262

Abstract: 20n50e 20n50 MC34262 application note MOSFET 20n50e MC33262 P3657-A MC34362 PT4220 2535 ic 12V DC to 36V dC converter circuit diagram
Contextual Info: ON Semiconductort MC34262 MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications. These integrated circuits feature an internal startup timer for stand–alone applications,

MC34362

Contextual Info: Order this document by MC34262/D MC34262 MC33262 Advance Information Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications. These integrated circuits feature an internal startup

MC33262 datasheet

Abstract: MOSFET 20n50e 20n50e motorola 20n50e zero crossing detector ic with 230v 20n50 PT4220 EE-42 MC33262 EE-42-20
Contextual Info: Order this document by MC34262/D MC34262 MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications. These integrated circuits feature an internal startup

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

20n50

Abstract: RFP-20N50TPR SN63
Contextual Info: 20 Watts, 50 Ω General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Thick film Aluminum nitride ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver .005” thk Lead(s): Features • DC – 4.0 GHz Electrical Specifications

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”