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IXGM25N90 Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGM25N90A		IXYS	Power MOSIGBTs	Scan	PDF	680.12KB	7

IXGM25N90 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
wabash Abstract: 25N80A LHi 978 25n80 25N100 25N90 IXGH25N100 IXGH25N80 IXGH25N90 IXGM25N100 Contextual Info: I X Y S LOKM " 03 4686226 I X Y S C O R P DE I 4bübddb UUUUddU Jj 03E 00220 D IXGH25N80, 90, 100 IXGM25N80, 90, 100 25 AMPS, 800-1000 VOLTS MAXIMUM RATINGS Sym. IXGH25N80 IXGM25N80 IXGH25N90 IXGM25N90 IXGH25N100 IXGM25N100 Unit Drain-Source Voltage 1 Vd ss	OCR Scan	ixgh25n80 ixgm25n80 ixgh25n90 ixgh25n100 +8ixgm25n90 ixgm25n100 wabash 25n80a lhi 978 25n80 25n100 25n90	PDF
TO210AC Abstract: TO-210AC TO-238 IXGN75N60 IXGM20N100A IXGM40N50 IXGM40N50A IXGM30N60 Contextual Info: 4686226 I 03E 0 0 1 6 0 I. X Y S C O R P □3 X Y S CORp D ' 7 '“ 3 ^ - /3 D eT\| 4t.fit.25b DDOOltiD T Power MOSIGBTs Part Number CollectorEmltter Voltage Vces Volts Continuous Pulsed Collector Current Collector Current Collectoi Emitter Fall Tc=25 °C	OCR Scan	ixgn75n100 ixgn75n90 ixgn75n80 ixgn75n60 +12ixgn75n50 ixgm25n100a ixgm20n100a ixgm10n100a ixgm25n90a ixgm20n90a to210ac to-210ac to-238 ixgm40n50 ixgm40n50a ixgm30n60	PDF
IXGH30N50A Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60 Contextual Info: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses	OCR Scan	4bflb55b ixgh30n50a ixgh20n50a ixgp10n50a +7ixgh20n50 ixgh25n80a ixgh40n60 ixgp10n60a amp. mosfet 1000 watt ixgh25n90a ixgm30n60	PDF

Catalog Datasheet

Type

Document Tags

PDF

wabash

Abstract: 25N80A LHi 978 25n80 25N100 25N90 IXGH25N100 IXGH25N80 IXGH25N90 IXGM25N100
Contextual Info: I X Y S LOKM " 03 4686226 I X Y S C O R P DE I 4bübddb UUUUddU Jj 03E 00220 D IXGH25N80, 90, 100 IXGM25N80, 90, 100 25 AMPS, 800-1000 VOLTS MAXIMUM RATINGS Sym. IXGH25N80 IXGM25N80 IXGH25N90 IXGM25N90 IXGH25N100 IXGM25N100 Unit Drain-Source Voltage 1 Vd ss

OCR Scan

ixgh25n80 ixgm25n80 ixgh25n90 ixgh25n100 +8

PDF

TO210AC

Abstract: TO-210AC TO-238 IXGN75N60 IXGM20N100A IXGM40N50 IXGM40N50A IXGM30N60
Contextual Info: 4686226 I 03E 0 0 1 6 0 I. X Y S C O R P □3 X Y S CORp D ' 7 '“ 3 ^ - /3 D eT| 4t.fit.25b DDOOltiD T Power MOSIGBTs Part Number CollectorEmltter Voltage Vces Volts Continuous Pulsed Collector Current Collector Current Collectoi Emitter Fall Tc=25 °C

OCR Scan

ixgn75n100 ixgn75n90 ixgn75n80 ixgn75n60 +12

PDF

IXGH30N50A

Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
Contextual Info: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses

OCR Scan

4bflb55b ixgh30n50a ixgh20n50a ixgp10n50a +7

PDF