20N35GVL
Abstract: HGT1S20N35G3VL HGT1S20N35G3VLS HGTP20N35G3VL HGT1S20N35G3VLS9A TA49076 ignition WITH IGBTS T0-262AA T0263AB
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs April 1995 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection
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hgtp20n35g3vlhgt1s20n35g3vlhgt1s20n35g3vlso-220ab+8175oco-262aa20n35gvlhgt1s20n35g3vls9ata49076ignition with igbtst0-262aat0263ab
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10N120BN
Contextual Info: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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hgtg10n120bnhgtp10n120bnhgt1s10n120bnso-263ab+110n120bn
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10N120BN
Abstract: G10N120BN ta49290 T0263AB
Contextual Info: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS S em iconductor January 1999 Data Sheet 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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hgtg10n120bnhgtp10n120bnhgt1s10n120bnso-263ab+410n120bng10n120bnta49290t0263ab
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vishay 1N4007 DO-214AC
Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . V I S H AY I N T E R T E C H N O L O G Y, I N C . 整流器 整流器 选型指南 肖特 基 整 流 器 超快 恢 复整流器 标 准和快 速恢 复整流器 桥式整流器 w w w. v i s h a y. c o m
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vmn-sg2178-1111vishay 1n4007 do-214acvs-30bq060pbf40mt160kpbf+7vishay 1n4007 do-213abss32 control pack70mt160kpbf20bq030pbf430 sbl2040ctv40150mbr10t100
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MUR120 SMD
Abstract: diode DGP30 VH500 SMA UF4007 SMD DIODE UF4007 b330la UGF10FCT ss2ph10 UGF5 uf5408 SMD diode
Contextual Info: 半導体: 整流素子 • 小信号ダイオード • ツェナーダイオードとサージ吸収素子 • MOSFETs • 高周波トランジスタ • オプトエレクトロニクス • ICs 受動素子: 抵抗器 • 磁性体 • キャパシタ • ひずみゲージ変換器および応力解析システム
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ul94v-0ito-220abo-220mur120 smd+9diode dgp30vh500sma uf4007smd diode uf4007b330laugf10fctss2ph10ugf5uf5408 smd diode
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HGT1S20N35G3VL
Abstract: HGT1S20N35G3VLS HGTP20N35G3VL 20N35GVL 20N35 HGT1S20N35G3VLS9A IGBT DRIVER ignition coil automotive TA49076 T0-262AA T0263AB
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs December 2001 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection
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hgtp20n35g3vlhgt1s20n35g3vlhgt1s20n35g3vlso-220ab+9175oco-262aa20n35gvl20n35hgt1s20n35g3vls9aigbt driver ignition coil automotiveta49076t0-262aat0263ab
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1N5822 SMD
Abstract: 1n5819 smd MBRF26 1n5817 SOD-123 MELF GLASS Schottky Blue SB360 smd 1N5817 smd 1N5819 SOD-123 DO-213AB GLASS Schottky Blue smd package 1N5819
Contextual Info: SCHOTTKY RECTIFIERS Package IF AV V(BR) Range Max VF @ lF Device(1) Family(3) Type (V) (V) (A) MBR0520L+ MBR0530 MBR0540 SB020 - SB060 1N5817 - 1N5819 1N5817G - 1N5819G 1N5817M - 1N5819M BYM13-xx SB120 - SB160 SB1H90 - SB1H100+ SGL41-xx SL03+ SL04+ SS12 - SS16
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mbr0520lmbr0530mbr0540sb020+16sb0601n58171n58191n5817g1n5819g1n5817m1n5822 smd1n5819 smdmbrf261n5817 sod-123melf glass schottky bluesb360 smd1n5817 smd1n5819 sod-123do-213ab glass schottky bluesmd package 1n5819
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smps 500W
Abstract: smps 500w half bridge 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 smps igbt HGTG30N60A4 1kW IGBT
Contextual Info: 108872 IGBT LC 0006.1 9/11/00 11:28 AM Page 1 First-Choice Power Switch IGBT Switch Mode Power Supply SMPS IGBTs SMPS IGBT Product Offering New SMPS IGBTs are now the first-choice power switch for high-frequency, off-line power conversion Intersil has developed the 600V IGBT
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100khzhgtg12n60a4o-252aao-220ab+15t0-263abo-268breakdown/10100ns200nssmps 500wsmps 500w half bridge500w half bridge smpssmps 1kwirfp450 full bridgesmps 100w half bridgeh bridge irf740smps igbthgtg30n60a41kw igbt
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TP20N
Abstract: T0263AB T0-262AA HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS fü HARRIS S E M I C O N D U C T O R 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs April 1995 Packages Features JEDEC TO-220AB • Logic Level Gate Drive EMITTER . • Internal Voltage Clamp COLLECTOR
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hgtp20n35g3vlhgt1s20n35g3vlhgt1s20n35g3vlso-220ab+3tp20nt0263abt0-262aa
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HGT1S20N35G3VL
Abstract: HGT1S20N35G3VLS HGTP20N35G3VL HGT1S20N35G3VLS9A T0-262AA T0263AB
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs November 2003 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection
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hgtp20n35g3vlhgt1s20n35g3vlhgt1s20n35g3vlso-220ab+5175oco-262aahgt1s20n35g3vls9at0-262aat0263ab
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10BQ100PbF
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Worldwide Leader in Power Rectifiers Rectifiers FEATURED PRODUCTS • • • • • Bridge Rectifiers Fast Recovery Rectifiers Schottky Rectifiers Standard Rectifiers Ultrafast Recovery Rectifiers
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vmn-sg2125-1403disc9337-272610bq100pbf |
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KBL 103
Abstract: D0214AB D0-218AA D0218 T0263AB
Contextual Info: CASEDRAWINGS i\ i C NGi j i\j o i :c 0.034 0.86 0.028(0.71} DIA “T 0 .2 AC, :e i AM.y. 4 W ' t . I.sad ammeter is 0-026(0.66) tc -su fix't 0-023 (0 58) D0-2Q1AD -213AA (GL34) DQ-204AC (DO-15) H DQ-204AL (DO-41) D 0-213AB (GL41) 99 M D0-2Q4AP D 0-214AA (SMB)
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dq-204acdo-15dq-204aldo-41+11-213aa0-213ab0-214aad0-214ab-214ba-214ackbl 103d0214abd0-218aad0218t0263ab
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1N5822 SS34
Abstract: equivalent sb560 sb140 equivalent sb360 equivalent sb550 equivalent SS16 SMB T0263AB 1N5822 SMB 1n5822 do 214ab SB160 equivalent
Contextual Info: SCHOTTKY RECTIFIERS 10 A 0.6 CASE TY P E MPG06 i.a DO-5!04AL DO-213AB M ELF DO-214AC SMA 2.0 3.0 DO-214AA SMB DO-201 AD f I 1 \ 1 i • V rrm (VOLTS) 20 SB020 SB120 1N5817 SGL41-20 l!lBYM13-20 SS 12 SU 2 SS22 SL22 SB320 30 SB030 SB130 1N5818 SGL41-30 :iBYM13-30
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mpg06do-213abdo-214acdo-214aa+16do-201sb020sb1201n5817sgl41-20lbym13-201n5822 ss34equivalent sb560sb140 equivalentsb360 equivalentsb550 equivalentss16 smbt0263ab1n5822 smb1n5822 do 214absb160 equivalent
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D0214AA
Abstract: DO-213AB D0-214AA D0214AC SMA DO213-AB D0213AA do213ab DO-213AB MELF melf Schottky glass 10A Schottky bridge
Contextual Info: c £ l>G e n e r a l V * 1 S e m ic o n d u c t o r WFACEMOUNTQUICKGUIDE Series Type Voltage V Current or Power GL34* EGL34* BYM07 RGL34* MB-S 1N64XX* GL41* BYM10* BYM11* BYM13 SGL41 RGL41* EGL41* BYM12* GF1* RGF1* EGF1* S1 RS1 ES1 SS1, SL1 EDF1XS DFXXS
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egl34bym07rgl341n64xx+16bym10bym11bym13sgl41rgl41egl41d0214aado-213abd0-214aad0214ac smado213-abd0213aado213abdo-213ab melfmelf schottky glass10a schottky bridge
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note
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T0263AB
Abstract: SBLB2030CT SBLB2040CT
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT SBLB2030CT AND SBLB2040CT SCHOTTKY RECTIFIER Reverse Voltage - 30 and 40 Volts Forward Current - 20.0 Amperes FEATURES T0-263AB ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction,
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sblb2030ctsblb2040ctt0-263absblb2q30ct+1t0263ab
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vishay 1N4007 DO-214AC
Abstract: 7 Segment common cathode MBR360 smd diode DGP30 05B2S SMD DIODE UF4007 1N4007 DO-214BA VS-30BQ100PBF 1N5822 SMD 1N4007 MINI MELF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . V I S HAY INTERTE C HNOLO G Y, IN C . diodes RECTIFIERS Selector Guide Bridge Rectifiers Fast Recover y Rectifier s Schottky Rectifiers Standard Rectifiers Ultrafast Recover y Rectifiers w w w. v i s h a y. c o m
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vmn-sg2125-1009vishay 1n4007 do-214ac7 segment common cathodembr360 smd+7diode dgp3005b2ssmd diode uf40071n4007 do-214bavs-30bq100pbf1n5822 smd1n4007 mini melf
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12N60C3
Abstract: HGT1S12N60C3RS T0263AB 12N60C3R
Contextual Info: HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS HARRIS S E M I C O N D U C T O R 24A, 600V, Rugged, UFS Series N-Channel IGBTs December 1997 Features Description • 24A, 600V at Tc = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as
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hgtp12n60c3rhgt1s12n60c3rhgt1s12n60c3rs1-800-4-harris+312n60c3t0263ab12n60c3r
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10N120BN
Abstract: G10N120BN 10N120 TA49290 HGT1S10N120BNS HGT1S10N120BNS9A HGTG10N120BN HGTP10N120BN TB334 T0263AB
Contextual Info: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best
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hgtg10n120bnhgtp10n120bnhgt1s10n120bns10n120bn+6g10n120bn10n120ta49290hgt1s10n120bns9atb334t0263ab
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Selector Guide
Abstract: gl112 VS-20ETS08F SS10P2CL
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Rectifiers - Worldwide Leader in Power Rectifiers Rectifiers FEATURED PRODUCTS • • • • • Bridge Rectifiers Fast Recovery Rectifiers Schottky Rectifiers Standard Rectifiers Ultrafast Recovery Rectifiers
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vmn-sg2125-1407disc9337-2726selector guidegl112+2vs-20ets08fss10p2cl
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f42n03l
Abstract: 2n03l 42N03L F42N03 RFP42N03L T0263AB 32 N03L RF1S42N03L RF1S42N03LSM F1S42N
Contextual Info: H A F R F R I S semi conductor RFP42N03L, R F 1 S 4 2 N03L, R F1S42N 03LSM 42A, 30V, 0.025Q, N-Chan nel Logic Level Power M O S F E T s March 1997 F e a tu re s D e s c rip tio n • 4 2 A ,3 0V The RFP42N03L, RF1S42N03L, and RF1S42N03LSM are N-Channel power MOSFETs manufactured using the
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rfp42n03lf1s42n03lsmrf1s42n03l+9rf1s42n03lsmta490301-800-4-hf42n03l2n03l42n03lf42n03t0263ab32 n03l
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HGT1S20N35G3VL
Abstract: HGT1S20N35G3VLS HGTP20N35G3VL HGT1S20N35G3VLS9A T0262 104 50v T0-262AA T0263AB
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS S E M I C O N D U C T O R 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs April 1995 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR
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hgtp20n35g3vlhgt1s20n35g3vlhgt1s20n35g3vlso-220ab+7175oco-262aahgt1s20n35g3vls9at0262104 50vt0-262aat0263ab
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EGP300
Abstract: FEPI6GT ug2d equivalent FEP16FT equivalent fepi6 FEP30FP DO-214M FEP6DT equivalent FES16CT FES16DT
Contextual Info: FA S T E F F IC IE N T R E C T IF IE R S 10 A CASE TYPE 0.50 0.60 D0-Z13AA MINI'MELF UG06 1.0 00- 204AL DO-i?04AP 00-2 04AL «► I D0-204AP | I1 II % I V rrm (VOLTS) 50 fcGLMA UG06A# F6P1GA UF4001# FE1A UG1A# GI1001 100 COI M B UG06B# ESP18B UF4002# FE1B
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d0-z13aa204ald0-204apuf4005+16uf4006uf4007byv26dbyv26eegl34cegl34degp300fepi6gtug2d equivalentfep16ft equivalentfepi6fep30fpdo-214mfep6dt equivalentfes16ctfes16dt
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TC 9310 IC
Abstract: HGT1S20N35G3VL HGT1S20N35G3VLS HGTP20N35G3VL COIL IGNITION HGT1S20N35G3VLS9A Intersil ignition IGBT T0-262AA T0263AB
Contextual Info: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs April 1995 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection
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hgtp20n35g3vlhgt1s20n35g3vlhgt1s20n35g3vlso-220ab+8175oco-262aatc 9310 iccoil ignitionhgt1s20n35g3vls9aintersil ignition igbtt0-262aat0263ab
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