TA49030 Search Results

16N03

Contextual Info: RFD16N03L, RFD16N03LSM Data Sheet Title FD1 03L D16 3LS bt A, V, 22 m, gic vel, Cha el wer OSTs utho eyrds terrpoon, gic vel, Cha el wer OSTs, 1AA O2AA April 1999 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using

16n03l

Contextual Info: interrii RFD16N03L, RFD16N03LSM D a ta S h e e t 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

FP42N03L

Abstract: f42n03l F42N03 RF1S42N03LSM RFP42N03L fp42n03 TA49030 AN9321 AN9322 RF1S42N03LSM9A
Contextual Info: RFP42N03L, RF1S42N03LSM Data Sheet 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

16N03LS

Abstract: 16n03l 9312v 03LSM 16N03
Contextual Info: RFD16N03L, RFD16N03LSM iU HARRIS U U S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30 V • JE D EC T O -251A A r DS ON = 0 . 0 2 2 » • Temperature Compensating PSPICE Model

Contextual Info: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

16n03l

Abstract: 16N03 RFD16N03LSM RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322 RFD16N03L
Contextual Info: RFD16N03L, RFD16N03LSM S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model

16N03

Abstract: TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334
Contextual Info: RFD16N03L, RFD16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

f42n03l

Contextual Info: ? *3 2 S RFP42N03L, RF1S42N03L, RF1S42N03LSM 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 42A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

16N03

Abstract: 16N03L TA49030 AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334
Contextual Info: RFD16N03L, RFD16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

FP45N03L

Abstract: F45N03L fp45n03 RFP45N03L RF1S45N03LSM TA49030 F45N03 relay 24v 30a AN7254 AN7260
Contextual Info: RFP45N03L, RF1S45N03L, RF1S45N03LSM S E M I C O N D U C T O R 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 45A, 30V SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model

f42n03l

Abstract: F42N03 FP42N03L fp42n03 RF1S42N03L RF1S42N03LSM RFP42N03L TA49030 AN9321 AN9322
Contextual Info: RFP42N03L, RF1S42N03L, RF1S42N03LSM S E M I C O N D U C T O R 42A, 30V, 0.025Ω, N-Channel Logic Level Power MOSFETs March 1997 Features Description • 42A, 30V The RFP42N03L, RF1S42N03L, and RF1S42N03LSM are N-Channel power MOSFETs manufactured using the

f45n03l

Abstract: FP45N03L
Contextual Info: ? *3 2 S RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

f42n03l

Abstract: 2n03l 42N03L F42N03 RFP42N03L T0263AB 32 N03L RF1S42N03L RF1S42N03LSM F1S42N
Contextual Info: H A F R F R I S semi conductor RFP42N03L, R F 1 S 4 2 N03L, R F1S42N 03LSM 42A, 30V, 0.025Q, N-Chan nel Logic Level Power M O S F E T s March 1997 F e a tu re s D e s c rip tio n • 4 2 A ,3 0V The RFP42N03L, RF1S42N03L, and RF1S42N03LSM are N-Channel power MOSFETs manufactured using the