16N03 Search Results

16N03 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
16N03L		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
16N03LSM		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
16N03LSM9A		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1

16N03 Price and Stock

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Micro Commercial Components MCQ16N03-TP MOSFET N-CH 30V 8-SOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	MCQ16N03-TP	Digi-Reel	4,000		1	1 $1.35 10 $0.85 100 $0.56 1000 $0.40 10000 $0.37	Buy Now
	MCQ16N03-TP	Cut Tape	4,000		1	1 $1.35 10 $0.85 100 $0.56 1000 $0.40 10000 $0.37	Buy Now
	MCQ16N03-TP	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.31	Buy Now
Goford Semiconductor G16N03S N30V, 16A,RD<10M@10V,VTH1.0V~2.5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	G16N03S	Digi-Reel	3,494		1	1 $0.76 10 $0.47 100 $0.31 1000 $0.21 10000 $0.19	Buy Now
	G16N03S	Cut Tape	3,494		1	1 $0.76 10 $0.47 100 $0.31 1000 $0.21 10000 $0.19	Buy Now
Amphenol PCD A850498216N03 CONN BACKSHELL BANDING SZ16 19
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A850498216N03	Bag	5		1	1 $46.54 10 $39.56 100 $33.63 1000 $31.54 10000 $31.54	Buy Now
Rochester Electronics LLC RFD16N03LSM9A N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RFD16N03LSM9A	Bulk			377	1 - 10 - 100 - 1000 $0.80 10000 $0.80	Buy Now
Amphenol PCD A850497716N03 BACKSHELL;ENV-EMI/RFI;ENP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A850497716N03	Bulk			25	1 - 10 - 100 $59.86 1000 $59.86 10000 $59.86	Buy Now

Find more 16N03 price and stock on Findchips.com

16N03 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
F219 Abstract: vu050 DIXYS Contextual Info: DIXYS VUG 50 idAV = 58 A v rrm = 800-1800 V Three Phase Rectifier Bridge v RSM V r„ m V V TVPe -O AS 3 b 3 Li L + - o— 800 1200 1400 1600 1800 900 1300 1500 1700 1900 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* . * delivery time on request	OCR Scan	50-08N03 50-12N03 50-14N03 50-16N03 50-18N03* F2-19 F2-20 F219 vu050 DIXYS	PDF
Contextual Info: □IXYS Three Phase Rectifier Bridges V ' rsm V RAM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 50 IdAV = 58 A VRRM = 800-1 8 0 0 V i- Type Pt 1 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* L-W - * delivery time on request	OCR Scan	50-08N03 50-12N03 50-14N03 50-16N03 50-18N03*	PDF
50-08N Abstract: 50-12N03 50-08N03 50-16N 50-18N03 50-18N vuo 50-08N03 Contextual Info: 4bñb22b DODICI OQl « I X Y □IXYS VUO 50 IdAV = 58 A VRRM = 800-1800 V Three Phase Rectifier Bridges V RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type fet F ti "it VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* I—► —	OCR Scan	50-08N03 50-12N03 50-14N03 50-16N03 50-18N03* 50-08N 50-16N 50-18N03 50-18N vuo 50-08N03	PDF
Contextual Info: VUO 60 Vpp. = 1200 -1800 v RRM Three Phase Rectifier Bridge v RSM VRRM V V 1300 1500 1700 1900 1200 1400 1600 1800 dAV = 72 A Type '“ l i t VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* L-ii— ' delivery time on request Symbol Test Conditions 'd A V	OCR Scan	60-12N03 60-14N03 60-16N03 60-18N03* 00G355	PDF
30-16N03 Abstract: 30-18N03 30-08N03 3037a vuo 30 Contextual Info: n ix Y S VUO 30 IdAV Three Phase Rectifier Bridge v RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 V RRM -O Type 37 A 800-1800 V + VUO 30-08N03 VUO 30-12N03 VUO 30-14N03 VUO 30-16N03 VUO 30-18N03* * delivery time on request Symbol Test Conditions	OCR Scan	30-08N03 30-12N03 30-14N03 30-16N03 30-18N03* F2-15 F2-16 30-18N03 3037a vuo 30	PDF
60-14N03 Abstract: VUO60 60-12N03 60-16N03 60-18N03 Contextual Info: DIXYS VUO 60 Three Phase Rectifier Bridge idAv —72 A VRRM = 1200-1800 V + v RSM V RRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* * delivery time on request Symbol I IdAVM ® l2t Maximum Ratings	OCR Scan	60-12N03 60-14N03 60-16N03 60-18N03* F2-27 VUO60 60-18N03	PDF
60-12N03 Abstract: 14N03 60-08N03 16N03 60-14N03 60-16N03 60-18N03 DIXYS 12n03 RSM 037 Contextual Info: □IXYS Three Phase Rectifier Bridge v RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 60 VRRM = 800 -1800 V IdAV ?' Type VUO 60-08N03 VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* J • ' I = 58 A 1 L-ii— L-N—1 * delivery time on request	OCR Scan	60-08N03 60-12N03 60-14N03 60-16N03 60-18N03* 60-12N03 14N03 60-08N03 16N03 60-14N03 60-16N03 60-18N03 DIXYS 12n03 RSM 037	PDF
VUO60 Abstract: 60-12N03 60-14N03 60-16N03 60-18N03 Contextual Info: nixYS VUO 60 VRRM =1200-1800 V = 72 A I Three Phase Rectifier Bridge V RSM VRRM dAV Type I f ' V V 1300 1500 1700 1900 1200 1400 1600 1800 VUO VUO VUO VUO 60-12N03 60-14N03 60-16N03 60-18N03* 1 11 Î1 III 11 'S -W L+, I . f * delivery tim e on request Symbol	OCR Scan	60-12N03 60-14N03 60-16N03 60-18N03* VUO60 60-18N03	PDF
16N03 Contextual Info: 16N03L, 16N03LSM Data Sheet Title FD1 03L D16 3LS bt A, V, 22 m, gic vel, Cha el wer OSTs utho eyrds terrpoon, gic vel, Cha el wer OSTs, 1AA O2AA April 1999 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using	Original	RFD16N03L, RFD16N03LSM 16N03	PDF
16n03l Contextual Info: interrii 16N03L, 16N03LSM D a ta S h e e t 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum	OCR Scan	RFD16N03L, RFD16N03LSM circuit60 RFD16N03LSM AN7254 AN7260. 16n03l	PDF
16N03LS Abstract: 16n03l 9312v 03LSM 16N03 Contextual Info: 16N03L, 16N03LSM iU HARRIS U U S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30 V • JE D EC T O -251A A r DS ON = 0 . 0 2 2 » • Temperature Compensating PSPICE Model	OCR Scan	RFD16N03L, RFD16N03LSM -251A -252A RFD16N03L RFD16N03LSM 61e-13 06e-3 05e-3 57e-6 16N03LS 16n03l 9312v 03LSM 16N03	PDF
Contextual Info: 16N03L, 16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum	OCR Scan	RFD16N03L, RFD16N03LSM 96e-9 1e-30 95e-4 92e-3 29e-5) 03e-3 45e-5)	PDF
16n03l Abstract: 16N03 RFD16N03LSM RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322 RFD16N03L Contextual Info: 16N03L, 16N03LSM S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model	Original	RFD16N03L, RFD16N03LSM O-251AA O-252AA RFD16N03L RFD16N03LSM 1e-30 95e-4 92e-3 29e-5) 16n03l 16N03 RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322	PDF
16N03 Abstract: TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334 Contextual Info: 16N03L, 16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.	Original	RFD16N03L, RFD16N03LSM TA49030. 16N03 TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334	PDF

16N03 Abstract: 16N03L TA49030 AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334 Contextual Info: 16N03L, 16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.	Original	RFD16N03L, RFD16N03LSM 16N03 16N03L TA49030 AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
PG-TDSON-8 Abstract: 16N03 TDSON-8 16N03LS DIN IEC 68-1 INFINEON transistor marking 16N03L APPLICATION NOTES FOR POWER SMPS BSC016N03LS JESD22 Contextual Info: 16N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 1.6 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel	Original	BSC016N03LS 16N03LS PG-TDSON-8 16N03 TDSON-8 16N03LS DIN IEC 68-1 INFINEON transistor marking 16N03L APPLICATION NOTES FOR POWER SMPS JESD22	PDF
Contextual Info: 0ATE SYH AUTHORITY DR R E V IS IO N RECORO 16N090 A RELEASED 25JA91 B REVISED MATERIAL SPEC 10JA92 B1 REVISED DIMENSION - 1 PLACE 22MY92 C ADDED .335, .0401.010-2 PLCS, .0551.0102 PLCS, .Q.15R-4 PLCS & .022+.000/-.006 DO NOT S C A LE CK 900005 SC SC 139761 GC GC	OCR Scan	16N090 25JA91 10JA92 22MY92 15R-4 1BN090 0362SO. 16N030 21N090	PDF