14N03 Search Results

F219

Abstract: vu050 DIXYS
Contextual Info: DIXYS VUG 50 idAV = 58 A v rrm = 800-1800 V Three Phase Rectifier Bridge v RSM V r„ m V V TVPe -O AS 3 b 3 Li L + - o— 800 1200 1400 1600 1800 900 1300 1500 1700 1900 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* . * delivery time on request

Contextual Info: □IXYS Three Phase Rectifier Bridges V ' rsm V RAM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 50 IdAV = 58 A VRRM = 800-1 8 0 0 V i- Type Pt 1 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* L-W - * delivery time on request

50-08N

Abstract: 50-12N03 50-08N03 50-16N 50-18N03 50-18N vuo 50-08N03
Contextual Info: 4bñb22b DODICI OQl « I X Y □IXYS VUO 50 IdAV = 58 A VRRM = 800-1800 V Three Phase Rectifier Bridges V RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type fet F ti "it VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* I—► —

Contextual Info: VUO 60 Vpp. = 1200 -1800 v RRM Three Phase Rectifier Bridge v RSM VRRM V V 1300 1500 1700 1900 1200 1400 1600 1800 dAV = 72 A Type '“ l i t VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* L-ii— ' delivery time on request Symbol Test Conditions 'd A V

30-16N03

Abstract: 30-18N03 30-08N03 3037a vuo 30
Contextual Info: n ix Y S VUO 30 IdAV Three Phase Rectifier Bridge v RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 V RRM -O Type 37 A 800-1800 V + VUO 30-08N03 VUO 30-12N03 VUO 30-14N03 VUO 30-16N03 VUO 30-18N03* * delivery time on request Symbol Test Conditions

60-14N03

Abstract: VUO60 60-12N03 60-16N03 60-18N03
Contextual Info: DIXYS VUO 60 Three Phase Rectifier Bridge idAv —72 A VRRM = 1200-1800 V + v RSM V RRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* * delivery time on request Symbol I IdAVM ® l2t Maximum Ratings

60-12N03

Abstract: 14N03 60-08N03 16N03 60-14N03 60-16N03 60-18N03 DIXYS 12n03 RSM 037
Contextual Info: □IXYS Three Phase Rectifier Bridge v RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 60 VRRM = 800 -1800 V IdAV ?' Type VUO 60-08N03 VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* J • ' I = 58 A 1 L-ii— L-N—1 * delivery time on request

VUO60

Abstract: 60-12N03 60-14N03 60-16N03 60-18N03
Contextual Info: nixYS VUO 60 VRRM =1200-1800 V = 72 A I Three Phase Rectifier Bridge V RSM VRRM dAV Type I f ' V V 1300 1500 1700 1900 1200 1400 1600 1800 VUO VUO VUO VUO 60-12N03 60-14N03 60-16N03 60-18N03* 1 11 Î1 III 11 'S -W L+, I . f * delivery tim e on request Symbol

14N03LA

Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA
Contextual Info: 14N03LA 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

t14-n03

Abstract: 14n03 T14 N03 t14n03 369D NTD14N03R NTD14N03RG NTD14N03RT4 NTD14N03RT4G DSA0032463
Contextual Info: 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK http://onsemi.com Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

14N03

Abstract: 14N03L
Contextual Info: 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications 25 R DS on),max 13.9 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: 14N03R, 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK http://onsemi.com Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge

14N03L

Abstract: IPD14N03L P-TO252 14N03
Contextual Info: 14N03L Preliminary data OptiMOS
=Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) ID V m
13.5 30 A P-TO252
Superior thermal resistance 175°C operating temperature

14N03LA

Abstract: 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 IPB14N03LA JESD22
Contextual Info: 14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

14N03L

Abstract: IPD14N03LA ANPS071E IPD14N03L smd diode marking 59A 14N03
Contextual Info: 14N03L OptiMOS Buck converter series Product Summary Feature • N-Channel VDS • Logic Level RDS on • Low On-Resistance RDS(on) ID 30 V 13.5 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P- TO252 -3-11 • Superior thermal resistance

14N03LA

Abstract: 14N03L 14N03 IPB14N03LA G IPI14N03LA IPP14N03LA IPB14N03LA
Contextual Info: 14N03LA 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

14N03LA

Abstract: IPP14N03LA IPI14N03LA JESD22 14N03L 14N03
Contextual Info: 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications 25 R DS on),max 13.9 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

14N03L

Abstract: 14N03LA 14N03
Contextual Info: 14N03LA 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level

14N03LA

Abstract: 14N03
Contextual Info: 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters R DS on ,max • Qualified according to JEDEC1) for target applications 25 13.9 ID 30 V m: A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

N03G

Abstract: t14 N03G T14N03g 14N03 ON N03G t14-n03 Datasheets N03G 369D NTD14N03R NTD14N03R-001
Contextual Info: 14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK http://onsemi.com Features •ăPlanar HD3e Process for Fast Switching Performance •ăLow RDS on to Minimize Conduction Loss •ăLow Ciss to Minimize Driver Loss •ăLow Gate Charge •ăOptimized for High Side Switching Requirements in

t14n03

Abstract: 14n03 T14 N03 t14-n03 NTD14N03RT4 369D NTD14N03R
Contextual Info: 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

t14n03

Abstract: t14-n03 T14 N03 14n03 351 MARKING D-PAK 351 D-PAK MARKING CODE 351 D-PAK
Contextual Info: 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

T14N03g

Abstract: n03g T14 N03g ON N03G 14n03 NVD14N03RT4G NVD14 NVD14N03R 369D
Contextual Info: 14N03R, 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK http://onsemi.com Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge

14n03

Abstract: VU0110-16N07 vuo 82-12N07 vu0110 08N03 12N03 VU016- 16N03 190-16N07 16N07
Contextual Info: 3~ Rectifier Bridges, B6U Type ^IhJC PSM ► New A -C 45°C 10 ms A 50 130 4.5 46 0.75 120° sine 100 0.8 40 130 3.1 0.516 (120° sine) 300 0.8 15 130 2.5 0.42 (120° sine) 250 400 440 500 575 800 1400 1600 1800 250 400 440 500 575 800 1200 1400 1600 1800